論文

• Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Yi Chang, Kuniyuki Kakushima. Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films, Japanese Journal of Applied Physics (JJAP), Vol. 61, May 2022.
• Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Y. Chang, Kuniyuki Kakushima. Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement, Japanese Journal of Applied Physics (JJAP), Vol. 61, No. 2, Feb. 2022.
• Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Yi Chang, Kuniyuki Kakushima. On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films, Japanese Journal of Applied Physics (JJAP) （SSDM特集号）, Vol. 60, Page SBBA05, Apr. 2021.
• S-L. Tsai, T. Hoshii, H. Wakabayashi, K. Tsutsui, T-K. Chung, E. Chang, K. Kakushima. Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering, Applied Physics Letters, Vol. 118, No. 8, Page 82902, Feb. 2021.
• Kuan Ning Huang, Yueh-Chin Lin, Jia Ching Lin, Chia Chieh Hsu, Jin Hwa Lee, Chia-Hsun Wu, Jing Neng Yao, Heng-Tung Hsu, Venkatesan Nagarajan, Kuniyuki Kakushima, Kazuo Tsutsui, Hiroshi Iwai, Edward Yi Chang, Chao Hsin Chien. Study of E-mode AlGaN/GaN MIS-HEMT with La-silicate gate insulator for power applications, Journal of Electronic Materials, Vol. 49, pp. 1348–1353, Nov. 2019.
• Yueh Chin Lin, Yu Xiang Huang, Gung Ning Huang, Chia Hsun Wu, Jing Neng Yao, Chung Ming Chu, Shane Chang, Chia Chieh Hsu, Jin Hwa Lee, Kuniyuki Kakushima, Kazuo Tsutsui, Hiroshi Iwai, Edward Yi Chang. Enhancement-Mode GaN MIS-HEMTs with LaHfOx Gate Insulator for Power Application, IEEE Electron Device Letters, Vol. 38, No. 8, pp. 1101-1104, Aug. 2017.
• F. A. Fatah, Y.-C. Lin, R.-X. Liu, K.-C. Yang, T.-W. Lin, H.-T. Hsu, J.-H. Yang, Y. Miyamoto, H. Iwai, C. Hu, S. Salahuddin, E. Y. Chang. A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/ In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications,, Applied Physics Express, Volume 9, 026502, Jan. 2016.
• F. A. Fatah, Y.-C. Lin, T.-Y. Lee, K.-C. Yang, R.-X. Liu, J.-R. Chan, H.-T. Hsu, Y. Miyamoto, E. Y. Chang. Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications, Solid State Sci. Technol, volume 4, issue 12, N157-N159, Oct. 2015.
• E. Y. Chang, C.-I Kuo, H.-T. Hsu, C.-Y. Chiang, Y. Miyamoto. InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications, Appl. Phys. Exp., vol. 6, no. 3, 2013.
• C.-H. Yu, H.-T. Hsu, C.-Y. Chiang, C.-I Kuo, Y. Miyamoto, E. Y. Chang. Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching, JPN. J. APPL. PHYS., vol. 52, no. 2, 2013.
• F. Fatah, C.-I Kuo, H.-T. Hsu, C.-Y. Chiang, C.-Y. Hsu, Y. Miyamoto, E. Y. Chang. Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz, JPN. J. APPL. PHYS., vol. 51, no. 11, 2012.
• C-I. Kuo, H-T. Hsu, Y-L. Chen, C-Y. Wu, E. Y. Chang, Y. Miyamoto, W-C. Tsern, K. C. Sahoo. RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1 - xAs)m/(InAs)n Superlattice-Channel Structure for Millimeter-Wave Applications, IEEE Electron Device Letters, vol. 31, no. 7, pp. 677-679, July 2010.
• Chia-Ta Chang, Heng-Tung Hsu, Edward Yi Chang, Chien-I Kuo, Jui-Chien Huang, Chung-Yu Lu, Yasuyuki Miyamoto. 30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs, IEEE Electron Device Letters, Vol. 31, No. 2, pp. 105 - 107, Feb. 2010.
• Chia-Yuan Chang, Heng-Tung Hsu, Edward Yi Chang, Hai-Dang Trinh, Yasuyuki Miyamoto. InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric, Electrochemical and Solid-State Letters,, vol. 12, no. 12, pp. H456-H459, Dec. 2009.
• Chia-Yuan Chang, Heng-Tung Hsu, Edward Yi Chang, YASUYUKI MIYAMOTO. InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications, Japanese Journal of Applied Physics, Volume 48, No. 4, Issue 2, 04C094 (3 pages), Apr. 2009.
• Chien-I KUO, Heng-Tung HSU, Edward Yi CHANG, Yasuyuki MIYAMOTO, Wen-Chung TSERN. InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application, Japanese Journal of Applied Physics, The Japan Society of Applied Physics, Vol. 47, No. 9, pp. 7119–7121, Sept. 2008.
• Chien-I Kuo, Heng-Tung Hsu, Edward Yi Chang, Chia-Yuan Chang, Yasuyuki Miyamoto, Suman Datta, Marko Radosavljevic, Guo-Wei Huang, Ching Ting Lee. RF and Logic Performance Improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite channel HEMTs Using Gate-Sinking Technology, IEEE Electron Device Lett., IEEE, vol. 29, no. 4, pp. 290-293, Apr. 2008.
• Chia-Yuan Chang, Heng-Tung Hsu, Edward Yi Chang, Chien-I Kuo, Suman Datta, Marko Radosavljevic, YASUYUKI MIYAMOTO, Guo-Wei Huang. Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications, IEEE Electron Dev. Lett., vol. 28, no. 10, pp. 856-858, Oct. 2007.

国際会議発表 (査読有り)

• Chien-I Kuo, Wee Chin Lim, Heng-Tung Hsu, Chin-Te Wang, Li-Han Hsu, Faiz Aizad, Guo-Wei Hung, Yasuyuki Miyamoto, Edward Yi Chang. Bonding Temperature Effect on the Performance of Flip Chip Assembled 150nm mHEMT Device on Organic Substrate, 2010 International Conference on Enabling Science and Nanotechnology (ESciNano), Dec. 2010.
• Faiz Aizad, Heng-Tung Hsu, Chien-I Kuo, Chien-Ying Wu, Edward Yi Chang, Yasuyuki Miyamoto, Guo-Wei Huang, Yu-Lin Chen, Yu-Sheng Chiu. Investigation Logic Performances of 80-nm HEMTs for InxGa1?xAs, 37th International Symposium on Compound Semiconductor, June 2010.
• C.-T. Wang, C.-I. Kuo, W.-C. Lim, L.-H. Hsu, H.-T. Hsu, Y. Miyamoto, E.Y. Chang, S.-P. Tsai, Y.-S. Chiu. An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications, 22nd Int. Conf. Indium Phosphide and Related Materials, June 2010.
• Chien-I Kuo, Heng-Tung Hsu, Chung Li, Chien Ying Wu, Edward Yi Chang, YASUYUKI MIYAMOTO, Y.-L. Chen, D. Biswas. A 40-nm-Gate InAs/InGaAs Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT, IEEE 21th Conference on Indium Phosphide and Related Materials (IPRM'09), May 2009.
• Edward Yi Chang, Chien-I Kuo, Heng-Tung Hsu, YASUYUKI MIYAMOTO, Chia Ta Chang, Chien Ying Wu. Evaluation of InAs QWFET for Low Power Logic applications, Semiconductor Technologies meeting,ECS Transactions Vol. 12, 7th ISTC/CISC Emerging, Mar. 2009.
• C. Y. Chang, H. T. Hsu, E. Y. Chang, C. I. Kuo, Y. Miyamoto. InAs-Channel HEMTs for Ultra- Low-Power LNA Applications, 2008 International Conference on Solid State Devices and Materials, Sept. 2008.
• Chien-I Kuo, Edward Yi Chang, Chia-Yuan Chang, Heng-Tung Hsu, YASUYUKI MIYAMOTO. Investigation of impact ionization from InXGa1-XAs to InAs channel HEMTs for high speed and low power applications, The 20th Indium Phosphide and Related Material Conf. (IPRM 2008), May 2008.
• Chia-Yuan Chang, Edward Yi Chang, Yi-Chung Lien, Yasuyuki Miyamoto, Chien-I Kuo, Sze-Hung Cheng, Li-Hsin Chu. High-PerformanceIn0.52Al0.48As/In0.6Ga0.4AsPower Metamorphic HEMT for Ka-Band Applications,, IEEE International Conference on Semiconductor Electronics, Nov. 2006.

[ BibTeX 形式で保存 ]    [ 論文・著書をCSV形式で保存 ]    [ 特許をCSV形式で保存 ]