@book{CTT100659565,
  author = {芝原 健太郎 and 宮本恭幸 and 内田 建},
  title = {タウア・ニン 最新VLSIの基礎 第二版},
  publisher = {丸善},
  year = 2013,
}

@article{CTT100678923,
  author = {M. Yamada and K. Uchida and Y. Miyamoto},
  title = {Delay time component of InGaAs MOSFET caused by dynamic source resistance},
  journal = {IEICE Trans. Electron},
  year = 2014,
}

@article{CTT100659663,
  author = {Tsunaki Takahashi and Shunri Oda and Ken Uchida},
  title = {Methodology for Evaluating Operation Temperatures of Fin-Type Field-Effect Transistors Connected by Interconnect Wires},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@article{CTT100659658,
  author = {Teruyuki Ohashi and Shunri Oda and Ken Uchida},
  title = {Impact of Deformation Potential Increase at Si/SiO$_{2}$ Interfaces on Stress-Induced Electron Mobility Enhancement in Metal–Oxide–Semiconductor Field-Effect Transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@article{CTT100659660,
  author = {Aya Shindome and Yu Doioka and Nobuyasu Beppu and Shunri Oda and Ken Uchida},
  title = {Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@article{CTT100652829,
  author = {Tsunaki Takahashi and Nobuyasu Beppu and Kunro Chen and Shunri Oda and Ken Uchida},
  title = {Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@article{CTT100654581,
  author = {G. Yamahata and T. Kodera and H. O. H. Churchill and K. Uchida and C. M. Marcus and S. Oda},
  title = {Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots},
  journal = {Physical Review B},
  year = 2012,
}

@article{CTT100654587,
  author = {K. Horibe and T. Kodera and T. Kambara and K. Uchida and S. Oda},
  title = {Key capacitive parameters for designing single-electron transistor charge sensors},
  journal = {J. Appl. Phys},
  year = 2012,
}

@article{CTT100654709,
  author = {Y. Nakamine and T. Kodera and K. Uchida and S. Oda},
  title = {Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100632888,
  author = {Marolop Simanullang and Koichi Usami and Tetsuo Kodera and Ken Uchida and Shunri Oda},
  title = {Growth of narrow and straight germanium nanowires by vapour-liquid-solid chemical-vapour-deposition},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100654865,
  author = {Marolop Simanullang and Koichi Usami and Tetsuo Kodera and Ken Uchida and Shunri Oda},
  title = {Germanium nanowires with 3-nm-diameter prepared by low temperature vapour-liquid-solid chemical vapour deposition},
  journal = {Journal of Nanoscience and Nanotechnology},
  year = 2011,
}

@article{CTT100654227,
  author = {N. Kadotani and T. Ohashi and T. Takahashi and S. Oda and K. Uchida},
  title = {Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100654866,
  author = {M. A. Sulthoni and T. Kodera and K. Uchida and S. Oda},
  title = {Numerical simulation study of electrostatically defined silicon double quantum dot device},
  journal = {J. Appl. Phys.},
  year = 2011,
}

@article{CTT100654599,
  author = {BERRIN PINAR ALGUL and 小寺 哲夫 and 小田 俊理 and 内田 建},
  title = {Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade},
  journal = {Jpn. J. Appl. Phys},
  year = 2011,
}

@article{CTT100619837,
  author = {Tomohiro Kambara and Tetsuo Kodera and Tsunaki Takahashi and Gento Yamahata and Ken Uchida and Shunri Oda},
  title = {Simulation study of charge modulation in coupled quantum dots in silicon},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100619829,
  author = {T. Takahashi and T. Kodera and S. Oda and K.  Uchida},
  title = {Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field},
  journal = {Journal of Applied Physics},
  year = 2011,
}

@article{CTT100619789,
  author = {Y. Nakamine and N. Inaba and T. Kodera and K. Uchida and R. N. Pereira and A. R. Stegner and M. S. Brandt and M.  Stutzmann and S. Oda},
  title = {Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100654228,
  author = {N. Kadotani and T. Takahashi and T. Ohashi and S. Oda and K. Uchida},
  title = {Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1E18 cm-3 and silicon-on-insulator thickness of less than 10 nm},
  journal = {Journal of Applied Physics},
  year = 2011,
}

@article{CTT100639220,
  author = {Y. Nakamine and T. Kodera and K. Uchida and S. Oda},
  title = {Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching},
  journal = {},
  year = 2011,
}

@article{CTT100619850,
  author = {T. Ishikawa and H. Nikaido and K. Usami and K. Uchida and S. Oda},
  title = {Fabrication of Nanosilicon Ink and Two-Dimensional Array of Nanocrystalline Silicon Quantum Dots},
  journal = {Japanese Journal of Applied Physics},
  year = 2010,
}

@article{CTT100624105,
  author = {Jun Ogi and Thierry Ferrus and Tetsuo Kodera and Yoshishige Tsuchiya and Ken Uchida and David A. Williams and Shunri Oda and Hiroshi Mizuta},
  title = {Experimental Observation of Enhanced Electron–Phonon Interaction in Suspended Si Double Quantum Dots},
  journal = {Japanese Journal of Applied Physics},
  year = 2010,
}

@article{CTT100624099,
  author = {Jun Ogi and Mohammad Adel Ghiass and Tetsuo Kodera and Yoshishige Tsuchiya and Ken Uchida and Shunri Oda and Hiroshi Mizuta},
  title = {Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation},
  journal = {Japanese Journal of Applied Physics},
  year = 2010,
}

@article{CTT100624106,
  author = {高橋綱己 and 山端元音 and 小木純 and 小寺哲夫 and 小田俊理 and 内田建},
  title = {「強磁場印加による(110)pMOSFETサブバンド構造の直接的観測」},
  journal = {『応用物理学会シリコンテクノロジー分科会研究集会予稿集』},
  year = 2010,
}

@article{CTT100598610,
  author = {T. Nagami and Y. Tsuchiya and K. Uchida and H. Mizuta and S. Oda},
  title = {Scaling Analysis of Nanoelectromechanical Memory Devices},
  journal = {Japanese Journal of Applied Physics},
  year = 2010,
}

@article{CTT100624108,
  author = {G. Yamahata and T. Kodera and H. Mizuta and K. Uchida and S. Oda and H. Mizuta},
  title = {Control of Inter-dot Electrostatic Coupling by a Side Gate in Silicon Double Quantum Dot Operating at 4.5 K},
  journal = {Appl. Phys. Express.},
  year = 2009,
}

@article{CTT100591370,
  author = {Xin Zhou and Ken Uchida and hiroshi mizuta and SHUNRI ODA},
  title = {Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure},
  journal = {Journal of Applied Physics},
  year = 2009,
}

@article{CTT100585613,
  author = {Chuanbo Li and Kouichi Usami and T. Muraki and H. Mizuta and K. Uchida and S. Oda},
  title = {The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate},
  journal = {Applied Physics Letters},
  year = 2009,
}

@article{CTT100585298,
  author = {G. Yamahata and Y. Tsuchiya and H. Mizuta and K. Uchida and S. Oda},
  title = {Electron transport through silicon serial triple quantum dots},
  journal = {Solid State Electronics},
  year = 2009,
}

@article{CTT100584674,
  author = {Benjamin Henri Jose Pruvost and K. Uchida and H. Mizuta and S. Oda},
  title = {Design optimization of NEMS switches for suspended-gate single-electron transistor applications},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2009,
}

@article{CTT100591371,
  author = {Benjamin Henri Jose Pruvost and Ken Uchida and hiroshi mizuta and SHUNRI ODA},
  title = {Design of New Logic Architectures utilizing Optimized Suspended-Gate Single-Electron Transistors},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2009,
}

@article{CTT100620479,
  author = {S. Kobayashi and M. Saitoh and K. Uchida},
  title = {Hole mobility enhancement by double-gate mode in ultrathin-body silicon-on-insulator p-type metal-oxide-semiconductor field-effect transistors},
  journal = {J. Appl. Phys},
  year = 2009,
}

@article{CTT100620485,
  author = {M. Saitoh and S. Kobayashi and K. Uchida},
  title = {Stress Engineering in High-k FETs for Mobility and On-Current Enhancements},
  journal = {IEEE Trans. on Electron Devices},
  year = 2009,
}

@article{CTT100585368,
  author = {Xin Zhou and K. Uchida and H. Mizuta and S. Oda},
  title = {Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films},
  journal = {},
  year = 2009,
}

@article{CTT100620486,
  author = {M. Ono and K. Uchida and T. Tezuka},
  title = {Advantages of Densely Packed Multi-Wire Transistors with Planar Gate Structure Fabricated on Low-k Buried Insulator over Planar Silicon-on-Insulator Devices},
  journal = {Jpn. J. Appl. Phys.},
  year = 2009,
}

@inproceedings{CTT100677533,
  author = {高橋綱己 and 別府伸耕 and 陳君ろ and 小田俊理 and 内田建},
  title = {バルク／SOI FinFET の自己加熱およびアナログ特性の最適化},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100677541,
  author = {新留彩 and 高橋綱己 and 小田俊理 and 内田建},
  title = {グラフェン抵抗変化型メモリの3端子動作に関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100664462,
  author = {黒澤裕也 and 角谷直哉 and 高橋綱己 and 大橋輝之 and 小田俊理 and 内田建},
  title = {不純物のイオン化エネルギー増大によるナノワイヤトランジスタの電気的特性に与える影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664465,
  author = {高橋綱己 and 小田俊理 and 内田建},
  title = {熱特性モデル化による回路中のFinFET動作温度評価手法},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664454,
  author = {新留彩 and 高橋綱己 and 小田俊理 and 内田建},
  title = {グラフェン抵抗変化型メモリのSET/RESET条件に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664443,
  author = {Aya Shindome and Tsunaki Takahashi and Shunri Oda and Ken Uchida},
  title = {Experimental Study on SET/RESET Conditions for Graphene ReRAM},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658479,
  author = {小寺 哲夫 and 堀部 浩介 and 蒲原 知宏 and 山端 元音 and 内田 建 and 荒川 泰彦 and 小田 俊理},
  title = {電子スピン量子ビットに向けた少数電子シリコン量子ドットの実現},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654877,
  author = {T. Kodera and K. Horibe and T. Kambara and T. Sawada and K. Uchida and Y. Arakawa and S. Oda},
  title = {Fabrication and characterization of silicon quantum dots toward spin-based quantum information devices},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652864,
  author = {Teruyuki Ohashi and Shunri Oda and Ken Uchida},
  title = {Impact of Deformation Potential Increase at Si/SiO2 Interfaces on Stress-Induced Electron Mobility Enhancement in MOSFET},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652958,
  author = {大橋輝之 and 小田俊理 and 内田建},
  title = {歪みによる電子移動度向上へMOS界面における変形ポテンシャル上昇が与える影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652960,
  author = {新留 彩 and 別府伸耕 and 高橋綱己 and 小田俊理 and 内田 建},
  title = {架橋・非架橋構造のグラフェン抵抗変化型メモリの書込・消去特性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652957,
  author = {高橋綱己 and 別府伸耕 and 小田俊理 and 内田建},
  title = {熱配慮設計によるFinFETアナログ特性の最適化},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652934,
  author = {Satoshi Ihara and Tetsuo Kodera and Kosuke Horibe and Yukio Kawano and Ken Uchida and Shunri Oda},
  title = {Demonstration of large charging energy in quantum dots fabricated on ultrathin SOI},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100655068,
  author = {T. Ohashi and T. Takahashi and T. Kodera and S. Oda and K. Uchida},
  title = {Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100664433,
  author = {Yoshifumi Nakamine and Jannatul Ferdous Susoma and Ran Zheng and Nobuhiro Kondo and Mohammad R. T. Mofrad and Michiel van der Zwan and Johan van der Cingel and Tetsuo Kodera and Yukio Kawano and Ken Uchida and Mutsuko Hatano and Ryoichi Ishihara and Shunri Oda},
  title = {Electrical and Optical Properties of Silicon Nanocrystals Prepared by Very High Frequency Plasma Deposition System},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100664435,
  author = {Tetsuo Kodera and kousuke Horibe and Tomohiro Kambara and Thierry Ferrus and Alessandro Rossi and Ken Uchida and David A. Williams and Yasuhiko Arakawa and Shunri Oda},
  title = {Silicon quantum dot devices toward electron spin quantum bits},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635539,
  author = {別府伸耕 and 小田俊理 and 内田 建},
  title = {AC コンダクタンス法及びパルスIV 法による自己発熱抑制時のSOI MOSFETドレイン電流評価},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100654212,
  author = {福岡佑二 and 小寺哲夫 and 武田健太 and 小幡利顕 and 吉田勝治 and 澤野憲太郎 and 内田建 and 白木靖寛 and 樽茶清悟 and 小田俊理},
  title = {Capping gate構造を有するSi/SiGe量子ドットの作製と評価},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635540,
  author = {高橋綱己 and 別府伸耕 and 陳 君璐 and 小田俊理 and 内田 建},
  title = {デバイスシミュレータを用いたナノスケールBulk/SOI FinFET の熱設計},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635542,
  author = {大橋輝之 and 高橋綱己 and 内田 建 and 小田俊理},
  title = {MOS 界面における変形ポテンシャルの上昇},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635543,
  author = {黒澤裕也 and 角谷直哉 and 高橋綱己 and 大橋輝之 and 小田俊理 and 内田 建},
  title = {ナノ薄膜SOI における不純物のイオン化エネルギー増大},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635918,
  author = {中峯嘉文 and 小寺哲夫 and 河野行雄 and 内田 建 and 小田俊理},
  title = {無水フッ酸エッチングによるシリコンナノ結晶の自然酸化膜の除去},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100654217,
  author = {小寺哲夫 and 堀部浩介 and 林文城 and 蒲原知宏 and T. Ferrus and A. Rossi and 内田建 and D. A. Williams and 荒川泰彦 and 小田俊理},
  title = {シリコン量子ドットを用いた電荷検出},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642424,
  author = {宮本恭幸 and 山田真之 and 内田建},
  title = {InGaAs MOSFETにおけるソース充電時間の検討},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652988,
  author = {別府伸耕 and 小田俊理 and 内田 建},
  title = {ACコンダクタンス法を用いた実験手法に対する検証},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652985,
  author = {新留 彩 and 福田祐樹 and 小田俊理 and 内田 建},
  title = {ユニバーサル曲線を超えるMOSFET移動度の観測とその物理的起源の解明},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652972,
  author = {Teruyuki Ohashi and Shunri Oda and Ken Uchida},
  title = {Physical Mechanism of Enhanced Uniaxial Stress Effect on Carrier Mobility in ETSOI MOSFETs},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652973,
  author = {N. Beppu and T. Takahashi and S Oda and K. Uchida},
  title = {Experimental Study of Self-Heating Effect (SHE) in SOI MOSFETs: Accurate Understanding of Temperatures During AC Conductance Measurement, Proposals of 2ω Method and Modified Pulsed IV},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652974,
  author = {新留 彩 and 福田裕樹 and 小田俊理 and 内田 建},
  title = {架橋多層グラフェンナノリボンにおける電荷数の温度依存性},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100653857,
  author = {大橋輝之 and 高橋綱己 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {ユニバーサル曲線を超えるMOSFET移動度の観測とその物理的起源の解明},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652987,
  author = {高橋綱己 and 別府伸耕 and 小田俊理 and 内田 建},
  title = {デバイスシミュレータを用いたナノスケールBulk/SOI FinFET熱等価回路モデルの導出},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100632885,
  author = {T. Takahashi and K.Chen and N.Beppu and S. Oda and K.  Uchida},
  title = {Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632992,
  author = {T. Ohashi and T. Takahashi and N. Beppu and S. Oda and K. Uchida},
  title = {Experimental Evidence of Increased Deformation Potential at MOS Interface and its Impact on Characteristics of ETSOI FETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634277,
  author = {Marolop Simanullang and Koichi Usami and Tetsuo Kodera and Ken Uchida and Shunri Oda},
  title = {Microscopic Study of the Germanium Nanowires grown at Low-temperatures by Au-catalysed Chemical Vapour Deposition},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634448,
  author = {T. Kodera and K. Horibe and W. Lin and T. Kambara and T. Ferrus and A. Rossi and K. Uchida and D. A. Williams and Y. Arakawa and S. Oda},
  title = {Development of silicon quantum dot devices toward spin quantum bits},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634446,
  author = {K. Horibe and T. Kodera and T. Kambara and K. Uchida and S. Oda},
  title = {Fabrication of few-electron silicon quantum dot devices based on an SOI substrate with a top gate cintact},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634393,
  author = {Y. Fukuoka and T. Kodera and K. Takeda and T. Obata and K. Yoshida and T. Otsuka and K. Sawano and K Uchida and Y. Shiraki and S. Tarucha and S. Oda},
  title = {Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634378,
  author = {Marolop Simanullang and Koichi Usami and Tetsuo Kodera and Ken Uchida and Shunri Oda},
  title = {Synthesis of small-diameter Ge NW at low temperature for electron device application},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634283,
  author = {Yoshifumi Nakamine and Ken Someno and Hiroki Nikaido and Masahiro Kouge and Tetsuo Kodera and Yukio Kawano and Ken Uchida and Mutsuko Hatano and Shunri Oda},
  title = {Evaluation of Electrical and Optical Property and High-Density Assembly of Nano-Crystalline Silicon Dot Array for Device Application},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634281,
  author = {Ian C. Robertson and Tetsuo Kodera and Yasuko Yanagida and Ken Uchida and Shunri Oda},
  title = {Utilizing 2D figures of DNA polymer for self-assembly applications on silicon platform},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634451,
  author = {Teruyuki Ohashi and Naotoshi Kadotani and Tsunaki Takahashi and Shunri Oda and Ken Uchida},
  title = {Mechanisms of electron mobility enhancement in junctionless SOI MOSFETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634449,
  author = {Tsunaki Takahashi and Tetsuo Kodera and Shunri Oda and Ken Uchida},
  title = {Direct Observation of Subband Structures in (110) Si pMOSFETs under High Magnetic Field and Its Impact on Hole Transport},
  booktitle = {G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists},
  year = 2011,
}

@inproceedings{CTT100633355,
  author = {Marolop Simanullang and Koichi Usami and Tetsuo Kodera and Ken Uchida and Shunri Oda},
  title = {Germanium nanowires with 3-nm-diameter prepared by low temperature  (260oC) vapour-liquid-solid chemical vapour deposition},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100658480,
  author = {小寺哲夫 and 堀部浩介 and 蒲原知宏 and 山端元音 and 内田建 and 荒川泰彦 and 小田俊理},
  title = {シリコン量子ドットにおけるスピン効果と磁場依存性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100655081,
  author = {T. Kodera and K. Horibe and T. Kambara and G. Yamahata and K. Uchida and Y. Arakawa and S. Oda},
  title = {Observation of few-electron regime and suppression of inter-dot tunneling in silicon quantum dots},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100630240,
  author = {堀部浩介 and 小寺哲夫 and 蒲原知宏 and 内田 建 and 小田俊理},
  title = {シリコン量子ドットと単電子トランジスタ電荷センサーの静電結合評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100630241,
  author = {福岡佑二 and 小寺哲夫 and 大塚朋廣 and 武田健太 and 小幡利顕 and 吉田勝治 and 澤野憲太郎 and 内田 建 and 白木靖寛 and 樽茶清悟 and 小田俊理},
  title = {Si/SiGe量子ドット構造のシミュレーションと作製},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100630242,
  author = {大橋輝之 and 高橋綱己 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {低温・強磁場環境を利用した極薄膜SOI中の変形ポテンシャルの評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100630245,
  author = {小寺哲夫 and 堀部浩介 and 林 文城 and 蒲原知宏 and Thierry Ferrus and Alessandro Rossi and 内田 建 and David Williams and 荒川泰彦 and 小田俊理},
  title = {並列結合したシリコン量子ドットにおける電荷検出実験},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100658483,
  author = {Berrin Pinar Algul and Tetsuo Kodera and SHUNRI ODA and Ken Uchida},
  title = {NTFETsにおけるトンネル・リーク電流の抑制に関する研究},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100630246,
  author = {中峯嘉文 and Mohammad Mofrad and Michiel Van Der Zwan and Johan Van Der Cingel and 小寺哲夫 and 内田 建 and 石原良一 and 小田俊理},
  title = {レーザアニーリングによるシリコンナノ結晶薄膜の電気特性への影響},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100657093,
  author = {T. Kodera and K. Horibe and H. Hayashi and Tomohiro Kambara and K. Uchida and Y. Arakawa and S. Oda},
  title = {Triangularly-positioned silicon triple quantum dots},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100624802,
  author = {Yoshifumi Nakamine and Tetsuo Kodera and Ken Uchida and Mutsuko Hatano and Shunri Oda},
  title = {Electrical Property of Nano-Crystalline Silicon Thin-Films Prepared by Very High Frequency Plasma Deposition System},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100657094,
  author = {K. Horibe and T. Kodera and T. Kambara and K. Uchida and S. Oda},
  title = {Observation of single-electron regime in a silicon quantum dot by a single-electron transistor},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620661,
  author = {Y. Fukuoka and T. Kodera and T. Otsuka and K. Takeda and T. Obata and K. Yoshida and K. Sawano and K Uchida and Y. Shiraki and S. Tarucha and S. Oda},
  title = {Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620659,
  author = {Muhammad Amin Sulthoni and Tetsuo Kodera and Ken Uchida and Shunri Oda},
  title = {Simulation Study of Electrostatically Defined Silicon Double Quantum Dot Device},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100624119,
  author = {Yoshifumi Nakamine and Mohammad R. T. Mofrad and Michiel van der Zwan and Johan van der Cingel and Tetsuo Kodera and Ken Uchida and Mutsuko Hatano and Ryoichi Ishihara and Shunri Oda},
  title = {Electrical Property of Nano-Crystalline Silicon Thin-Films Transistors Prepared by Very High Frequency Plasma Deposition System},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620648,
  author = {Tetsuo Kodera and Kousuke Horibe and Tomohiro Kambara and Gento Yamahata and Ken Uchida and Yasuhiko Arakawa and Shunri Oda},
  title = {Observation of Pauli-Spin Blockade and Single-Electron Regime in Silicon Coupled Quantum Dots},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620646,
  author = {Yoshifumi Nakamine and Ken Someno and Hiroki Nikaido and Masahiro Kouge and Tetsuo Kodera and Ken Uchida and Mutsuko Hatano and Shunri Oda},
  title = {Evaluation of Electrical and Optical Property and High-Density Assembly of Nano-Crystalline Silicon Dot Array for Device Application},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620647,
  author = {Marolop Simanullang and Koichi Usami and Tetsuo Kodera and Ken Uchida and Shunri Oda},
  title = {Synthesis of small-diameter Ge NW at low temperature for electron device application},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620663,
  author = {T. Kodera and K. Horibe and W. Lin and T. Kambara and T. Ferrus and A. Rossi and K. Uchida and D. A. Williams and Y. Arakawa and S. Oda},
  title = {Charge Detection in Silicon Quantum Dots Coupled in Parallel},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620644,
  author = {Y. Nakamine and Michiel van der Zwan and Johan van der Cingel and Tetsuo Kodera and Ken Uchida and Ryoichi Ishihara and Shunri Oda},
  title = {Laser Annealing of Silicon Nanocrystals Thin-films Prepared by VHF Plasma Deposition System},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620645,
  author = {Ian Robertson and Tetsuo Kodera and Yasuko Yanagida and Ken Uchida and Shunri Oda},
  title = {Constructing Templates for One-dimensional Nanostructure Uusing DNA Origami},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619845,
  author = {福岡佑二 and 小寺哲夫 and 大塚朋廣 and 武田健太 and 小幡利顕 and 吉田勝治 and 澤野憲太郎 and 内田 建 and 白木靖寛 and 樽茶清悟 and 小田俊理},
  title = {Si/SiGe 量子ドット作製に向けたPd トップゲート動作点の低電圧化},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619843,
  author = {林 文城 and 小寺哲夫 and Thierry Ferrus and Alessandro Rossi and David Williams and 内田 建 and 小田俊理},
  title = {シリコン単電子トランジスタを電荷センサとした電子数変化の検出},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619848,
  author = {中峯嘉文 and Michiel Van Der Zwan and Johan Van Der Cingel and 小寺哲夫 and 内田 建 and 石原良一 and 小田俊理},
  title = {VHF プラズマにより作製されたシリコンナノ結晶のレーザアニーリング},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619840,
  author = {角谷直哉 and 高橋綱己 and 大橋輝之 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {高不純物濃度のETSOI(Extremely-Thin SOI) 拡散層における移動度とSOI 膜厚および不純物濃度の関係},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619842,
  author = {堀部浩介 and 小寺哲夫 and 蒲原知宏 and 内田 建 and 小田俊理},
  title = {チャージセンサによるシリコン量子ドットの少数電子状態観測},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654159,
  author = {T. Ohashi and T. Takahashi and N. Beppu and S. Oda and K. Uchida},
  title = {Experimental Evidence of Increased Deformation Potential at MOS Interface and Its Impact on Characteristic of ETSOI FETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654158,
  author = {T. Takahashi and N. Beppu and K. Chen and S. Oda and K. Uchida},
  title = {Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100620954,
  author = {N. Kadotani and T. Takahashi and K. Chen and T. Kodera and S. Oda and K.  Uchida},
  title = {Anomalous Electron Mobility in Extremely-Thin SOI (ETSOI) Diffusion Layers with SOI Thickness of Less Than 10 nm and High Doping Concentration of Greater Than 1×1018cm-3},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619872,
  author = {Tomohiro Kambara and Tetsuo Kodera and Gento Yamahata and Ken Uchida and Shunri Oda},
  title = {Simulation study of charge modulation in coupled quantum dots in silicon},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620276,
  author = {高下雅央 and 石川哲也 and 宇佐美浩一 and 小寺哲夫 and 内田 建 and 小田俊理},
  title = {凹凸基板を用いたディップコーティング法によるナノ結晶シリコンの集積化技術},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620250,
  author = {福岡佑二 and 小寺哲夫 and 大塚朋廣 and 武田健太 and 小幡利顕 and 吉田勝治 and 澤野憲太郎 and 内田 建 and 白木靖寛 and 樽茶清悟 and 小田俊理},
  title = {Si/SiGe系2DEGのPdショットゲート制御による結合量子ドットの作製},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100624122,
  author = {Berrin Pinar Algul and Tetsuo Kodera and Shunri Oda and Ken Uchida},
  title = {Study on Device Parameters of Carbon Nanotube FETs to RealizeSteep Subthreshold Slope of less than 60 mV/decade},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620277,
  author = {ベッリン ピナー アルグル and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {CNTトランジスタにおけるバンド間トンネルを利用したS係数60 mV/dec未満を実現するデバイスパラメータの研究},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620244,
  author = {小林大助 and 栗原智之 and 小寺哲夫 and 内田 建 and 野平博司 and 小田俊理},
  title = {Pr系酸化膜を用いたヘテロ積層構造トンネル膜の電気特性シミュレーションと作製及び評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620243,
  author = {引田和宏 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {InPに格子整合したIn0.53Ga0.47Asバンド構造の一軸歪み依存性},
  booktitle = {第71回応用物理学会学術講演会},
  year = 2010,
}

@inproceedings{CTT100620242,
  author = {角谷直哉 and 高橋綱己 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {pn接合の無い極薄膜SOIトランジスタの作製と電気特性評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620241,
  author = {kouichi usami and Tetsuo Kodera and Ken Uchida and SHUNRI ODA},
  title = {Small-diameter Ge nanowires grown at 280°C by VLS－CVD},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619873,
  author = {Muhammad Amin Sulthoni and Tetsuo Kodera and Ken Uchida and Shunri Oda},
  title = {Preparation of SOI-based Double Quantum Dots Structure Defined by Geometry and Electrostatically},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100657097,
  author = {Tetsuo Kodera and Tomohiro Kambara and Kousuke Horibe and Gento Yamahata and Ken Uchida and Shunri Oda},
  title = {Silicon Quantum Dots for Spin-Based Quantum Information Processing},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620249,
  author = {蒲原知宏 and 小寺哲夫 and 山端元音 and 内田 建 and 小田俊理},
  title = {サイドゲートとトップゲートを用いたシリコン二重結合量子ドット形成シミュレーション},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620251,
  author = {小寺哲夫 and 山端元音 and 蒲原知宏 and 内田 建 and 小田俊理},
  title = {シリコン結合量子ドットにおけるスピン効果の観測},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100624123,
  author = {T. Kodera and G. Yamahata and T. Kambara and K. Uchida and C. M. Marcus and S. Oda},
  title = {Magnetic field dependence of a leakage current in Pauli-spin blockade regime of silicon double quantum dots},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619864,
  author = {Ian C. Robertson and Ken Uchida and Shunri Oda},
  title = {Artificial Membrane Constructed by one-dimensional Nanostructure using DNA Origami},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620491,
  author = {M. Saitoh and Y. Nakabayashi and H. Itokawa and M. Murano and I. Mizushima and K. Uchida and T. Numata},
  title = {Short-Channel Performance and Mobility Analysis of <110>- and <100>-Oriented Tri-Gate Nanowire MOSFETs with Raised Source/Drain Extensions},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100619863,
  author = {J. Ogi and T. Ferrus and T. Kodera and Y. Tsuchiya and K. Uchida and D. A. Williams and S. Oda and H. Mizuta},
  title = {Single-electron energy dissipation processes mediated by slab mode phonons observed for suspended silicon double quantum dots},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100624125,
  author = {T. Kodera and G. Yamahata and T. Kambara and K. Horibe and K. Uchida and C. M. Marcus and S. Oda},
  title = {Spin-related tunneling in lithographically-defined silicon quantum dots},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100598632,
  author = {Ian C.  Robertson and K. Uchida and S. Oda},
  title = {Artificial membrane constructed by one-dimensional nanostructure using DNA origami},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620963,
  author = {ロバートソン イアン and 内田 建 and 小田 俊理},
  title = {Utilizing electoosmotic affects in aligning DNA functionalized nanowires after being anchored onto a pattern surface},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100601109,
  author = {G. Yamahata and T. Kodera and T. Kambara and K. Uchida and C. M. Marcus and S. Oda},
  title = {Pauli Spin Blockade in a Lithographycally-defined Silicon Double Quantum Dot},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100607934,
  author = {Xin Zhou and Ken Uchida and Shunri Oda},
  title = {Current fluctuations in three-dimensionally stacked Si nanorystals thin films},
  booktitle = {Applied Physics Letters},
  year = 2010,
}

@inproceedings{CTT100620487,
  author = {K. Uchida},
  title = {Hole/Electron Transport in (110) pMOSFETs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620961,
  author = {小木 純 and Thierry Ferrus and 小寺哲夫 and 土屋良重 and 内田 建 and David Williams and 水田 博 and 小田俊理},
  title = {シリコン宙づり構造内の結合二重量子ドットの電子フォノン相互作用},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620971,
  author = {永見 佑 and 土屋良重 and 水田 博 and 内田 建 and 小田俊理},
  title = {エレクトロメカニカルシミュレーションによるNEMSメモリのスケーリング特性},
  booktitle = {第57回応用物理学関係連合講演会},
  year = 2010,
}

@inproceedings{CTT100620972,
  author = {蒲原知宏 and 小寺哲夫 and 山端元音 and 内田 建 and 小田俊理},
  title = {ダブルトップゲートを有するシリコン量子ドットのシミュレーションと作製},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620974,
  author = {Muhammad Amin Sulthoni and Tetsuo Kodera and Ken Uchida and Syunri Oda},
  title = {Simulation of silicon double quantum dots device fabricated by combining lithographical and electrostatical approaches},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100620994,
  author = {中峯嘉文 and 小寺哲夫 and 内田 建 and 小田俊理},
  title = {VHFプラズマパワーの変化によるシリコンナノ結晶の縮小化},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100621075,
  author = {高橋綱己 and 山端元音 and 小木 純 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {強磁場印加による(110) pMOSFETサブバンド構造の直接的観測},
  booktitle = {第57回応用物理学関係連合講演会},
  year = 2010,
}

@inproceedings{CTT100658444,
  author = {J. Ogi and T. Ferrus and T. Kodera and Y. Tsuchiya and K. Uchida and D. A. Williams and S. Oda and H. Mizuta},
  title = {Inelastic single-electron tunneling assisted by confined phonons observed for suspended silicon double quantum dots},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100599009,
  author = {T. Takahashi and G. Yamahata and J. Ogi and T. Kodera and S. Oda and K.  Uchida},
  title = {Direct Observation of Subband Structures in (110) pMOSFETs under High Magnetic Field: Impact of Energy Split Between Bands and Effective Masses on Hole Mobility},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100599333,
  author = {J. Ogi and T Ferrus and T. Kodera and Y. Tsuchiya and K. Uchida and D. A. Williams and S. Oda and Hiroshi Mizuta},
  title = {Electron-phonon interaction in suspended Si double quantum dots},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100601086,
  author = {Tetsuya Ishikawa and Hiroki Nikaido and kouichi usami and Ken Uchida and Shunri Oda},
  title = {Formation of two-dimensional array of Si nanocrystals using nano Si ink},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100601390,
  author = {T. Nagami and Y. Tsuchiya and K. Uchida and hiroshi mizuta and S. Oda},
  title = {Scaling Analysis of NEMS Memory Devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100657126,
  author = {Y. Nakamine and T. Kodera and K. Uchida and S. Oda},
  title = {Removal of Surface Oxide Layer from Silicon Nanocrystals by HF Vapor Etching},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100601401,
  author = {Liang He and kouichi usami and Ken Uchida and Shunri Oda},
  title = {Preparation and characterization of P-doped Ge nanowires by VLS-CVD},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100599354,
  author = {Gento Yamahata and Tetsuo Kodera and Hiroshi Mizuta and Ken Uchida and Shunri Oda},
  title = {Electron transport through coupled Si quantum dots toward quantum information devices},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100599356,
  author = {J. Ogi and T. Ferrus and T. Kodera and Y. Tsuchiya and K. Uchida and D. A. Williams and H. Mizuta and S. Oda},
  title = {Suspended quantum dot devices for sensor or quantum bit applications},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100603666,
  author = {Y.Nakamine and T.Kodera and K.Uchida and Shunri Oda},
  title = {Phosphorous-Doping in Silicon Nanocrystals by using VHF Plasma},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100603665,
  author = {Berrin Pinar Algul and Ken Uchida and Shunri Oda},
  title = {Modeling of Band-to-Band Tunneling in MOS Structures},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100603664,
  author = {Jean L. Tarun and Shaoyun Huang and Ken Uchida and Naoki Fukata and Koji Ishibashi and Shunri Oda},
  title = {Transport Properties of Silicon Nanowire with Ferromagnetic Leads},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100601087,
  author = {D. Hippo and Y. Nakamine and K. Uchida and S. Oda},
  title = {Thermotherapy for Cancer Using Silicon Nanocrystals},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100603663,
  author = {Ian C. Robertson and Ken Uchida and Shunri Oda},
  title = {Artificial Membrane Interfacial Layers via 1D nanostructures for Bio-Sensors},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100601407,
  author = {T. Kodera and G. Yamahata and T. Kambara and Thierry  Ferrus and D. A. Williams and K. Uchida and Yasuhiko Arakawa and S. Oda},
  title = {Fabrication and characterization of silicon double quantum dots towards spin qubits},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100601061,
  author = {Chao Yan and Ken Uchida and Shunri Oda},
  title = {Design Optimization of MEMS(NEMS) Resonator by 3-D Anisotropic Thermoelastic Modeling},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100601085,
  author = {Xin Zhou and Ken Uchida and Shunri Oda},
  title = {Carrier transport in ensemble of Si nanocrystals prepared by VHF plasma process,},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100600992,
  author = {Zhou and K Uchida and SHUNRI ODA},
  title = {Characteristics of current oscillations phenomenon in Si nanorystal thin films},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100599362,
  author = {小田俊理 and 内田 建},
  title = {シリコンナノテクノロジー：１次元、０次元、その先は？},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100600995,
  author = {晏超 and 内田 建 and 小田俊理},
  title = {MEMS(NEMS) 共振器設計のための体系的最適化法},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100600993,
  author = {二階堂広基 and 石川哲也 and 内田 建 and 小田俊理},
  title = {Langmuir-Blodgett法によるナノ結晶シリコン量子ドットの集積配列},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100599375,
  author = {T. Ishikawa and H. Nikaido and Kouichi Usami and K. Uchida and S. Oda},
  title = {Fabrication of nano Si ink and two-dimensionally assembled Si nanocrystals},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100600996,
  author = {山端元音 and 小寺哲夫 and 水田 博 and 内田 建 and 小田俊理},
  title = {トップゲートとサイドゲートによるシリコン結合量子ドットの静電結合制御},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585513,
  author = {Xin Zhou and Ken Uchida and Hiroshi Mizuta and Shunri Oda},
  title = {Current oscillations observed for sparse Si nanorystal thin films},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585375,
  author = {Xin Zhou and Ken Uchida and Hiroshi Mizuta and Shunri Oda},
  title = {Lateral conduction of Si nanorystals by thin film transistor structures},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585372,
  author = {Tomoyuki Kurihara and Yohei Nagahama and Daisuke Kobayshi and Hiroki Niikura and Yoshishige Tsuchiya and Hiroshi Mizuta and Hiroshi Nohira and Ken Uchida and Shunri Oda},
  title = {Engineering of Heterostructured Tunnel Barrier for Non-Volatile Memory Applications: Potential of Pr-based Heterostructured Barrier as a Tunneling Oxide},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585370,
  author = {J. Ogi and T. Ferrus and Y. Tsuchiya and K. Uchida and D. A. Williams and S. Oda and Hiroshi Mizuta},
  title = {Study of single-electron transport via suspended double silicon quantum dots},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100584676,
  author = {Aditi Goyal and Muhammad A Rafiq and Ken Uchida and Shunri Oda},
  title = {Parameter Randomness Analysis of Multiple Tunnel Junctions},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585528,
  author = {中峯嘉文 and 内田 建 and 小田俊理},
  title = {VHFプラズマにより作製されたSi量子ドットのPドーピング},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100598995,
  author = {村木太郎 and 李 伝波 and 増渕和典 and 宇佐美浩一 and 内田 建 and 小田俊理},
  title = {ラジカル窒化を用いたゲルマニウムナノワイヤデバイスの作製},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100620488,
  author = {K. Uchida},
  title = {Carrier Transport and Stress Engineering in Advanced Nanoscale MOS Transistors},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585527,
  author = {永見 佑 and 土屋良重 and 斎藤慎一 and 新井 唯 and 嶋田壽一 and 水田 博 and 内田 建 and 小田俊理},
  title = {pn接合部でのトラップを介したトンネリングを考慮したNEMSメモリの},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585526,
  author = {小木 純 and Thierry Ferrus and 土屋良重 and 内田 建 and David Williams and 水田 博 and 小田俊理},
  title = {Siナノブリッジチャネルに埋め込まれた結合二重量子ドット特性観測},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585523,
  author = {山端元音 and 土屋良重 and 水田 博 and 内田 建 and 小田俊理},
  title = {シリコン量子ドットデバイスの制御性向上に関する検討},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585522,
  author = {Xin Zhou and 中峯嘉文 and 内田 建 and 小田俊理},
  title = {Trap effects on carrier transport in Si nanocrystals thin film},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100620489,
  author = {K. Uchida and M. Saitoh},
  title = {Uniaxial Stress Engineering in (100) and (110) CMOS Transistors},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100620492,
  author = {M. Saitoh and N. Yasutake and Y. Nakabayashi and K. Uchida and T. Numata},
  title = {Understanding of Strain Effects on High-Field Carrier Velocity in (100) and (110) CMOSFETs under Quasi-Ballistic Transport},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100620497,
  author = {Y. Nakabayashi and T. Ishihara and T. Numata and K. Uchida and S. Takagi},
  title = {Inversion-Layer Mobility Limited by Coulomb Scattering on Si (100), (110) and (111) n-MOSFETs},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100620495,
  author = {S. Kobayashi and M. Saitoh and Y. Nakabayashi and T. Ishihara and T. Numata and K. Uchida},
  title = {Experimental Study on Hall Factor in Ultrathin-Body SOI n-MOSFETs},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100620498,
  author = {M. Saitoh and N. Yasutake and Y. Nakabayashi and K. Uchida and T. Numata},
  title = {Physical Understanding of Vth and Idsat Variations in (110) CMOSFETs},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100620499,
  author = {S. Kobayashi and T. Ishihara and M. Saitoh and Y. Nakabayashi and T. Numata and K. Uchida},
  title = {Successful measurements of Electron energy dependence of interface-trap-induced scattering in N-MOSFETs,},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100601394,
  author = {Chao Yan and Ken Uchida and Shunri Oda},
  title = {Design Optimization of MEMS(NEMS) Resonator by 3-D Anisotropic Thermoelastic Modeling},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100566751,
  author = {Gento. Yamahata and Ken. Uchida and Shunri. Oda and Yoshishige. Tsuchiya and Hiroshi. Mizuta},
  title = {Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots},
  booktitle = {},
  year = 2008,
}

@misc{CTT100594402,
  author = {Ken Uchida},
  title = {シリコン単電子素子とその集積回路への応用に関する研究},
  year = 2002,
}



@phdthesis{CTT100594402,
  author = {Ken Uchida},
  title = {シリコン単電子素子とその集積回路への応用に関する研究},
  school = {東京大学},
  year = 2002,
}