論文

• C-I. Kuo, H-T. Hsu, Y-L. Chen, C-Y. Wu, E. Y. Chang, Y. Miyamoto, W-C. Tsern, K. C. Sahoo. RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1 - xAs)m/(InAs)n Superlattice-Channel Structure for Millimeter-Wave Applications, IEEE Electron Device Letters, vol. 31, no. 7, pp. 677-679, July 2010.
• R. Wen, A. Lahiri, M. Alagurajan, A. Kuzume, S. Kobayashi, K. Itaya. Preparation and characterization of ultra-flat single crystal surfaces of Pd(111) and Au(111) by an in situ interference optical microscopy, J. Electroanal. Chem., Volume 649, Page 257, 2010.
• Chien-I KUO, Heng-Tung HSU, Edward Yi CHANG, Yasuyuki MIYAMOTO, Wen-Chung TSERN. InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application, Japanese Journal of Applied Physics, The Japan Society of Applied Physics, Vol. 47, No. 9, pp. 7119–7121, Sept. 2008.

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