@article{CTT100759551,
  author = {T. Ohashi and K. Suda and S. Ishihara and N. Sawamoto and S. Yamaguchi and K. Matsuura and K. Kakushima and N. Sugii and A. Nishiyama and Y. Kataoka and K. Natori and K. Tsutsui and H. Iwai and A. Ogura and H. Wakabayashi},
  title = {Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs},
  journal = {Japan Journal of Applied Physics},
  year = 2015,
}

@article{CTT100830371,
  author = {"Mokh Hadi" and "Shinichi Kano" and "Kuniyuki Kakushima" and "Yoshinori Kataoka" and "Akira Nishiyama" and "Nobuyuki Sugii" and "Hitoshi Wakabayashi" and "Kazuo Tsutsui" and "Kenji Natori" and "Hiroshi Iwai"},
  title = {A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based Electrodes using CeOx buffer layer},
  journal = {Semiconductor Science and Technology},
  year = 2014,
}

@article{CTT100830384,
  author = {"Y. Wu" and "H. Hasegawa" and "K. Kakushima" and "K. Ohmori" and "T. Watanabe" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "Y. Kataoka" and "K. Natori" and "K. Yamada" and "H. Iwai"},
  title = {A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability},
  journal = {Microelectronics Reliability},
  year = 2014,
}

@article{CTT100830585,
  author = {"Chunmeng Dou" and "Tomoya Shoji" and "Kazuhiro Nakajima" and "Kuniyuki Kakushima" and "Parhat Ahmet" and "Yoshinori Kataoka" and "Akira Nishiyama" and "Nobuyuki Sugii" and "Hitoshi Wakabayashi" and "Kazuo Tsutsui" and "Kenji Natori" and "Hiroshi Iwai"},
  title = {Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement},
  journal = {Microelectronics Reliability},
  year = 2014,
}

@article{CTT100830499,
  author = {"T. Kawanago" and "K. Kakushima" and "Y. Kataoka" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "K. Natori" and "H. Iwai"},
  title = {Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT},
  journal = {IEEE Transaction on Electron Devices(T-ED)},
  year = 2014,
}

@article{CTT100830501,
  author = {"K. Tuokedaerhan" and "K. Kakushima" and "Y. Kataoka" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "K. Natori" and "H. Iwai"},
  title = {Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain},
  journal = {Applied Physics Letters (APL)},
  year = 2014,
}

@article{CTT100830612,
  author = {"K. Tuokedaerhan" and "R. Tan and K. Kakushima" and "P. Ahmet" and "Y. Kataoka" and "A. Nishiyama" and "N. Sugii" and "H. Wakabayashi" and "K. Tsutsui" and "K. Natori" and "T. Hattori" and "H. Iwai"},
  title = {Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application},
  journal = {Applied Physics Letters (APL)},
  year = 2013,
}

@article{CTT100658805,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and takeo hattori and Kenji Natori and HIROSHI IWAI},
  title = {Comparative study of electrical characteristics in(100) and (110)surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure},
  journal = {Solid-State Electronics},
  year = 2013,
}

@article{CTT100658723,
  author = {DARYOUSH ZADEH and Hiroshi Oomine and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and Hiroshi Nohira and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode},
  journal = {Solid-State Electronics},
  year = 2013,
}

@article{CTT100658722,
  author = {Y. Wu and 竇春萌 and F. Wei and Kuniyuki KAKUSHIMA and 大毛利健治 and パールハットアヘメト and T. Watanabe and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and Keisaku Yamada and 片岡好則 and takeo hattori and HIROSHI IWAI},
  title = {Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@inproceedings{CTT100830263,
  author = {T. Shoji and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Effect of Surface Potential Control and Interface States for Silicon Nanowire Solar Cells},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830481,
  author = {H. Hasegawa and Y.Wu and J.Song and K. Kakushima and Y.Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830480,
  author = {M. Motoki and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H.Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Effect of Annealing Temperature on Sheet Resistance of Ni Germanide Formed by Multi-Layered Ni and Ge Films},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830478,
  author = {T. Kato and T.Inamura and A.Sasaki and K.Aoki and K.Kakushima and Y.Kataoka and A. Nishiyama and N. Sugii and H.Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Thickness-dependent electrical characterization of β‐FeSi2},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830473,
  author = {Y. Ito and H. Hori and K. Tsutsui and K. Kakushima and H. Wakabayashi and Y.Kataoka and A.Nishiyama and N. Sugii and K. Natori and H. Iwai},
  title = {Proposal of junction formation process for solar cells made of silicon microstructures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830484,
  author = {M. Okamoto and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and H. Iwai and W. Saito},
  title = {An Ohmic contact process for AlGaN/GaN Structures using TiSi2 electrodes},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830485,
  author = {Chunmeng Dou and Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830277,
  author = {T. Ohashi and H. Wakabayashi and K. Kakushima and N. Sugii and A. Nishiyama and Y. Kataoka and K. Natori and K. Tsutsui and H. Iwai},
  title = {Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830483,
  author = {Y. Nakamura and K. Kakushima and Y. Kataoka and A. Nishiyama and H. Wakabayashi and N. Sugii and K. Tsutsui and K. Natori and H. Iwai},
  title = {Measurement of flat-band voltage shift using multi-stacked dielectric film},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672963,
  author = {関拓也 and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Physical understanding of La-silicate gate dielectrics thermally formed by interface reaction on Si(110) and (111)},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672964,
  author = {Atsushi Takemasa and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characteristics of Ti, Ni, NiSi2 and Ni3P/n-diamond contacts},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672961,
  author = {Hiroshi Oomine and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and Akira Nishiyama and Nobuyuki Sugii and 片岡好則 and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Effect of pretreatment for high-/k//InGaAs interface property},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100780941,
  author = {T. Ohashi and K. Suda and S. Ishihara and N. Sawamoto and S. Yamaguchi and K. Matsuura and K. Kakushima and N. Sugii and A. Nishiyama and Y. Kataoka and K. Natori and K. Tsutsui and H. Iwai and A. Ogura and Hitoshi Wakabayashi},
  title = {Multi-Layered MoS2 Thin Film Formed by High-Temperature Sputtering for Enhancement-Mode nMOSFETs},
  booktitle = {Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials},
  year = 2014,
}

@inproceedings{CTT100674053,
  author = {伊藤勇磨 and 堀隼人 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
  title = {微細Si構造を利用した太陽電池に適した接合プロセスの提案},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674050,
  author = {堀隼人 and 伊藤勇磨 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
  title = {薄膜SOI太陽電池の発電特性への基板バイアス効果},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674046,
  author = {松川佳弘 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
  title = {AlGaN/GaN上のTi/C/TiN電極のコンタクト抵抗：Ti/C膜厚及び比率依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674010,
  author = {雷 一鳴 and 宗清修 and 角嶋邦之 and 川那子高暢 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 古橋 壮之 and 三浦 成久 and 山川 聡},
  title = {ATR-FTIR法を用いた熱処理によるLa2O3/SiC界面反応の解析},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674004,
  author = {劉 璞誠 and 竇春萌 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {コンダクタンス法によるAlGaN/GaNヘテロ接合界面トラップに関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674002,
  author = {譚錫昊 and 川那子高暢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {高電圧ストレスによるAlGaN/GaNの界面とバルクトラップの測定に関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673999,
  author = {元木雅章 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {NiとGe積層薄膜によって形成したNiGe膜のシート抵抗と熱処理温度の関係},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673477,
  author = {長谷川明紀 and 呉研 and 宋 禛漢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Mg/Si極薄膜積層の熱処理を用いて作製したMg2Siの赤外線吸収特性評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673475,
  author = {小路智也 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Siナノワイヤー曲面における保護膜界面準位密度の研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673474,
  author = {岡本真里 and 松川佳弘 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 大橋弘通 and 岩井洋 and 齋藤渉},
  title = {TiB2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673473,
  author = {今村浩章 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {積層シリサイド化スパッタプロセスにより作成したNiシリサイドショットキーダイオードの評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673472,
  author = {吉原亮 and 元木雅章 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Pを導入したNiSi2/n-Geコンタクトの電気特性と不純物拡散の様子},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673471,
  author = {細田修平 and Tuokedaerhan Kamale and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {W2C電極導入によるLa-silicate/Siにおける平坦な界面の実現},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673468,
  author = {関拓也 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Si(110),(111)基盤上で熱処理による界面反応で形成したLa-silicateゲート絶縁膜の物理的理解に関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673467,
  author = {大嶺洋 and ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 角嶋邦之 and 西山彰 and 杉井信之 and 片岡好則 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {La2O３/ InGaAs界面ラフネスに及ぼすALDプロセスの影響},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673466,
  author = {稲村太一 and 嘉藤貴史 and 佐々木亮人 and 青木克明 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {β-FeSi2の抵抗率熱処理依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673464,
  author = {LiWei and 佐々木亮人 and 大図 秀行 and 青木克明 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {単斜晶WO3薄膜抵抗率の熱処理依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673463,
  author = {陳江寧 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
  title = {La2O３ゲート絶縁膜を用いたAlGaN/GaNデバイスのプロセス依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673462,
  author = {呉研 and 長谷川明紀 and 角嶋邦之 and 渡辺  孝信 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Mg2Si-Siヘテロ接合トンネルFET特性の構造依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673460,
  author = {Tuokedaerhan Kamale and Shuhei Hosoda and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {W2Cゲート電極によるLa-silicate MOSFETの移動度改善},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673418,
  author = {ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 大嶺洋 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {低界面準位とsub-nm CETを有するLa2O３/ In0.53Ga0.47Asゲートスタックの実現},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673381,
  author = {小路智也 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {立体Si構造における局所的な界面準位密度の抽出},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673190,
  author = {Atsushi Takemasa and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characteristics of n-type diamond contacts with Ti, Ni, NiSi2 and Ni3P electrodes},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673189,
  author = {Takumi Ohashi and Hitoshi Wakabayashi and Kuniyuki KAKUSHIMA and Nobuyuki Sugii and Akira Nishiyama and Yoshinori Kataoka and Kenji Natori and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673188,
  author = {Hayato Hori and Yuuma Itou and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI},
  title = {Effects of substrate back bias on solar cells formed on thin SOI structures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673180,
  author = {Yuuma Itou and Hayato Hori and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI},
  title = {Schottky barrier height reduction process for silicide/Si interfaces},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673145,
  author = {Yoshihiro Matsukawa and Mari Okamoto and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {An Ohmic Contact Process for AlGaN/GaN Structures using TiCElectrode},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673095,
  author = {Takafumi Katou and Taichi Inamura and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characteristic of b-FeSi2},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673093,
  author = {雷 一鳴 and Shu Munekiyo and Kuniyuki KAKUSHIMA and Takamasa Kawanago and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI and M. Furuhashi and N. Miura and S. Yamakawa},
  title = {Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672974,
  author = {Masaaki Motoki and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Dependence between Sheet Resistance and Annealing Temperature of Ni Germanide Formed by Multi-Layered Ni and Ge Films},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672973,
  author = {Hiroki Hasegawa and Y. Wu and 宋 禛漢 and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {The Workshop on Future Trend of Nanoelectronics:WIMNACT 39},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672972,
  author = {Yoshinori Nakamura and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Hitoshi Wakabayashi and Nobuyuki Sugii and HIROSHI IWAI},
  title = {Measurement of flat-band voltage shift using multi-stacked dielectric film},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672971,
  author = {Tomoya Shoji and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Silicon Nanowire Solar Cells: Surface Passivation and Interface Analysis},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672969,
  author = {Hiroaki Imamura and Taichi Inamura and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Characterization of Thin NiSi2 Films by Stacked Silicidation Sputtering Process with Kr Gas},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672968,
  author = {宋 禛漢 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672967,
  author = {吉原亮 and Masaaki Motoki and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Interface control process toward un-pinned metal/germanium Schottky contact},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672966,
  author = {Shuhei Hosoda and Kamale Tuokedaerhan and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Atomically flat interface of La-silicate/Si with W2C gate electrodes},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830488,
  author = {Shuhei Hosoda and Kamale Tuokedaerhan and Kuniyuki Kakushima and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kenji Natori and Hiroshi Iwai},
  title = {Reliability of La-Silicate Mos Capacitors With Tungsten Carbide Gate Electrode},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100830490,
  author = {T. Seki and T. Kawanago and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
  title = {Electrical and Infrared Absorption Studies on La-silicate/Si Interface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658363,
  author = {Hiroshi Oomine and ダリューシュザデ and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658364,
  author = {Hiroshi Oomine and ダリューシュザデ and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658365,
  author = {関拓也 and Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Infrared absorption study of La-silicate gate dielectrics},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658366,
  author = {Atsushi Takemasa and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Impact of Surface Treatments for Metal Contact on p-type Diamonds},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658389,
  author = {Shuhei Hosoda and K. Tuokedaerhan and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Improvenents in interface, states with W-carbide metal gate for La2O3/si MOS Capacitor},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658390,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A Novel Ohmic Contact Process for n-Ge Substrates},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658393,
  author = {宋  禛漢 and 小山将央 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and 中塚理 and 大毛利健治 and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Keisaku Yamada and HIROSHI IWAI},
  title = {Atomically flat Ni-silicide/Si interface using NiSi2 sputtering},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658396,
  author = {Mari Okamoto and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Extraction of Energy Band Diagram of AlGaN/GaN with SiO2 Capped Annealing using X-ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658546,
  author = {関拓也 and Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {International Symposium on Next-Generation Electronics(ISNE 2013)},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658611,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Analyses of Nickel Silicide Formed on Si Nanowires with 10-nm-width},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660879,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660888,
  author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661659,
  author = {大橋匠 and 若林整 and 角嶋邦之 and 杉井信之 and 西山彰 and 片岡好則 and 名取研二 and 筒井一生 and 岩井洋},
  title = {単層MoS2チャネルを用いたn-MOSFETの性能見積もり},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661660,
  author = {松川佳弘 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
  title = {AlGaN/GaN上のTiC電極の電流電圧特性の熱処理温度依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661663,
  author = {嘉藤貴史 and 稲村太一 and 佐々木 亮人 and 青木 克明 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Fe層とSi層の積層スパッタにより形成されたβ-FeSi2のキャリア密度に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661664,
  author = {劉 璞誠 and 米澤宏昭 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {AlGaNのドライエッチングへのBcl3の影響に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658358,
  author = {Yang Zhao and マイマイティ マイマイティレャアティ and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Separation of bulk and interface traps of La-silicate on Si(100) surface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661678,
  author = {元木雅章 and 吉原亮 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Pを導入したNiSi2電極を用いたn-Ge基板の電流電圧特性の熱処理依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661680,
  author = {宗清修 and 川那子高暢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {ショットキーゲート材料によるAlGaN/GaNの容量電圧特性への影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658357,
  author = {Yang Zhao and マイマイティ マイマイティレャアティ and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Separation of bulk and interface traps of La-silicate on Si(100) surface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658356,
  author = {Yang Zhao and マイマイティ マイマイティレャアティ and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Separation of bulk and interface traps of La-silicate on Si(100) surface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658354,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Size dependent resistivity change of Ni-silicides in nano-region},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658335,
  author = {Kana Tsuneishi and Jiangning Chen and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A Robust Ohmic Contact Process for AlGaN/GaN using Ti-silicide electrodes},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658334,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Stacked Ni-Silicidation Process for Schottky Barrier FET},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658332,
  author = {田中祐樹 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface controlled metal contact for n-type diamonds},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658330,
  author = {shinichi kano and 竇春萌 and unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Transient Switching Characteristics of Ce-oxide Resistive Switching Devices},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658134,
  author = {K. Tuokedaerhan and Shuhei Hosoda and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Work Function Extraction of W,Ta and Ti Carbides Formed by Multi Stacked Process},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658132,
  author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658131,
  author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658130,
  author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658129,
  author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658112,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface properties of La-silicate gate dielectrics on Si(110)surface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661665,
  author = {譚錫昊 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {AlGaN/GaN上のTiSi2電極によるコンタクトの温度依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658361,
  author = {Taichi Inamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Formation of Fe-silicides using Multi-Stacking Sputtering Process},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658362,
  author = {Taichi Inamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Formation of Fe-silicides using Multi-Stacking Sputtering Process},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657453,
  author = {shinichi kano and 竇春萌 and unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and 片岡好則 and Kenji Natori and Miranda Enrique and takeo hattori and HIROSHI IWAI},
  title = {Influence electrode materials on CeOx based resistive switching},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654680,
  author = {Yuya Suzuki and ダリューシュザデ and Ryuji Hosoi and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of La2O3/In0.53Ga0.47AAs capacitors with surface nitridation},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654668,
  author = {中島一裕 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100654667,
  author = {中島一裕 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100654663,
  author = {Tasuku Kaneda and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Influence of Flash Lamp Annealing on Electrical Characteristics of MOS Device with Si/ La2O3/n-Si Structure},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100654594,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characterization of atomically flat NiSi2 Schottky diode},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654593,
  author = {Kazuki Matsumoto and 小山将央 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Ni silicidation for Si fin and nanowire structures},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654592,
  author = {Michihiro Hosoda and Yeonghun Lee and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Size dependent phonon limited electron mobility of Si nanowire},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654591,
  author = {Kana Tsuneishi and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical properties of Tm2O3 gate dielectric and its scaling issues},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654588,
  author = {田中祐樹 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654585,
  author = {shinichi kano and 竇春萌 and unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Impact of metal electrode material on resistive switching properties of Ce oxides},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654583,
  author = {Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface state density measurements of 3D silicon channel by charge pumping method},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654582,
  author = {Ryuji Hosoi and Yuya Suzuki and ダリューシュザデ and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654580,
  author = {中島一裕 and Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface state density measurements of 3D silicon channel by charge pumping method},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654579,
  author = {中島一裕 and Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface state density measurements of 3D silicon channel by charge pumping method},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654577,
  author = {来山大祐 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {[Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654576,
  author = {K.Tuokedaerhan and 金田翼 and Kuniyuki KAKUSHIMA and Ahmet Parhat and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Impact of annealing ambient for La2O3/Si capacitor},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654574,
  author = {Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {An analytical model of a tunnel FET with Schottky junction},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654573,
  author = {竇春萌 and Soshi Sato and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Si nanowire FET with asymmetric channel},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100831028,
  author = {DARYOUSH ZADEH and Hiroshi Oomine and Yuya Suzuki and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100830503,
  author = {T. Kamale and R. Tan and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
  title = {Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830496,
  author = {Y. Tanaka and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and S. Yamasaki and H. Iwai},
  title = {TiC Electrode Formed by Multi-Stacking Process for Diamond Contact Metal},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830553,
  author = {S. Kano and C. Dou and M. Hadi and K. Kakushima and P. Ahmet and A. Nishiyama and N. Sugii and K. Tsutsui and Y. Kataoka and K. Natori and E. Miranda and T. Hattori and H. Iwai},
  title = {Influence of Electrode Material for CaOx Based Resistive Switching},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657197,
  author = {Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {An analytical model of a tunnel FET with Schottky junction},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657193,
  author = {DARYOUSH ZADEH and Ryuji Hosoi and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characterization and improvement of high-k/InGaAs devices},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830546,
  author = {T. Kawanago and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
  title = {(100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657211,
  author = {中島一裕 and Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface state density measurements of 3D silicon channel by charge pumping method},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657205,
  author = {K. Tuokedaerhan and Tasuku Kaneda and マイマイティ マイマイティレャアティ and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Impact of Annealing Ambient for La2O3/Si Capacitor},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657198,
  author = {Wei Li and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface state density measurements of 3D silicon channel by conductance method},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657216,
  author = {田中祐樹 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Y. Tanaka, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657214,
  author = {shinichi kano and 竇春萌 and unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Impact of metal electrode material on resistive swirching properties of Ce oxides},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657212,
  author = {Ryuji Hosoi and Yuya Suzuki and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657208,
  author = {Daisuke Kitayama and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100658060,
  author = {Kana Tsuneishi and Jiangning Chen and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657951,
  author = {Jiangning Chen and Kana Tsuneishi and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657950,
  author = {Jiangning Chen and Kana Tsuneishi and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657642,
  author = {Tohtarhan Kamal and R. Tan and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface Properties of La-silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657639,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Thermally stable NiSi2 for Ge contact with Schottky barrirer height modulation capability},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657638,
  author = {Yuya Suzuki and ダリューシュザデ and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Effect of In0.53Ga0.47AAs surface nitridation on electrical characteristics of high-k/capacitors},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657633,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A Proposal of Schottky Barrire Height Tuning Method with Interface Controlled Ni/Si Stacked Silicidation Process},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657454,
  author = {Wei Li and 中島一裕 and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and 片岡好則 and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657357,
  author = {Ryuji Hosoi and Yuya Suzuki and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Characterization of matal Schottky junction for In0.53Ga0.47AAs substrates},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657252,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characterization of atomically flat NiSi2 Schottky diode”, Ni silicidation for Si Fin and nanowire strucures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657249,
  author = {Kana Tsuneishi and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical properties of Tm2O3 gate dielectric and its scaling issues},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657248,
  author = {Kana Tsuneishi and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical properties of Tm2O3 gate dielectric and its scaling issues},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657247,
  author = {Michihiro Hosoda and Yeonghun Lee and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI},
  title = {Size-dependent phonon-limited electron mobility in Si Nanowire MOSFETs},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657218,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Ni silicidation for Si Fin and nanowire strucures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657217,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Ni silicidation for Si Fin and nanowire strucures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100628830,
  author = {吉原 亮 and 角嶋邦之 and パールハットアヘメト and 中塚理 and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Ni/Si積層から形成されるNiシリサイドのショットキーダイオードの電流特性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654662,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics},
  booktitle = {ECS Transactions},
  year = 2011,
}

@inproceedings{CTT100654915,
  author = {Y. Wu and Kuniyuki KAKUSHIMA and 大毛利健治 and Akira Nishiyama and HIROSHI IWAI and Keisaku Yamada},
  title = {A Study on Fabrication and Analytic Modeling of novel Schottky contact tunneling Transistors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100830564,
  author = {D. Kitayama and T. Koyanagi and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai},
  title = {TiN Capping Effect on High Temperature Annealed RE-Oxide Devices for Scaled EOT},
  booktitle = {},
  year = 2010,
}