@article{CTT100614622,
  author = {A. Tsukazaki and S. Akasaka and K. Nakahara and Y. Ohno and H. Ohno and D. Maryenko and A. Ohtomo and M. Kawasaki},
  title = {Observation of the fractional quantum Hall effect in an oxide},
  journal = {Nature Materials},
  year = 2010,
}

@article{CTT100609382,
  author = {A. Tsukazaki and A. Ohtomo and D. Chiba and Y. Ohno and H. Ohno and M. Kawasaki},
  title = {Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric},
  journal = {Applied Physics Letters},
  year = 2008,
}

@article{CTT100609391,
  author = {A. Tsukazaki and A. Ohtomo and T. Kita and Y. Ohno and H. Ohno and M. Kawasaki},
  title = {Quantum Hall effect in polar oxide heterostructures},
  journal = {Science},
  year = 2007,
}

@article{CTT100609021,
  author = {J. Nishii and A. Ohtomo and M. Ikeda and Y. Yamada and K. Ohtani and H. Ohno and M. Kawasaki},
  title = {High-throughput synthesis and characterization of Mg<sub>1-x</sub>Ca<sub>x</sub>O films as a lattice and valence-matched gate dielectric for ZnO based field effect transistors},
  journal = {Applied Surface Science},
  year = 2006,
}

@article{CTT100609022,
  author = {J. Nishii and A. Ohtomo and K. Ohtani and H. Ohno and M. Kawasaki},
  title = {High-mobility field-effect transistors based on single-crystalline ZnO channels},
  journal = {Japanese Journal of Applied Physics Part 2-Letters & Express Letters},
  year = 2005,
}

@article{CTT100609380,
  author = {A. Tsukazaki and M. Kubota and A. Ohtomo and T. Onuma and K. Ohtani and H. Ohno and S. F. Chichibu and M. Kawasaki},
  title = {Blue light-emitting diode based on ZnO},
  journal = {Japanese Journal of Applied Physics Part 2-Letters & Express Letters},
  year = 2005,
}

@article{CTT100609479,
  author = {Y. Yamada and T. Fukumura and M. Ikeda and M. Ohtani and H. Toyosaki and A. Ohtomo and F. Matsukura and H. Ohno and M. Kawasaki},
  title = {Fabrication of ternary phase composition-spread thin film libraries and their high-throughput characterization: Ti<sub>1-x-y</sub>Zr<sub>x</sub>Hf<sub>y</sub>O<sub>2</sub> for bandgap engineering},
  journal = {Journal of Superconductivity},
  year = 2005,
}

@article{CTT100609395,
  author = {A. Tsukazaki and A. Ohtomo and T. Onuma and M. Ohtani and T. Makino and M. Sumiya and K. Ohtani and S. F. Chichibu and S. Fuke and Y. Segawa and H. Ohno and H. Koinuma and M. Kawasaki},
  title = {Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO},
  journal = {Nature Materials},
  year = 2005,
}

@article{CTT100609365,
  author = {T. I. Suzuki and A. Ohtomo and A. Tsukazaki and F. Sato and J. Nishii and H. Ohno and M. Kawasaki},
  title = {Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAIMgO<sub>4</sub> heterointerface},
  journal = {Advanced Materials},
  year = 2004,
}

@article{CTT100608590,
  author = {F. M. Hossain and J. Nishii and S. Takagi and T. Sugihara and A. Ohtomo and T. Fukumura and H. Koinuma and H. Ohno and M. Kawasaki},
  title = {Modeling of grain boundary barrier modulation in ZnO invisible thin film transistors},
  journal = {Physica E-Low-Dimensional Systems & Nanostructures},
  year = 2004,
}

@article{CTT100608588,
  author = {F. M. Hossain and J. Nishii and S. Takagi and A. Ohtomo and T. Fukumura and Hiroshi Fujioka and H. Ohno and H. Koinuma and M. Kawasaki},
  title = {Modeling and simulation of polycrystalline ZnO thin-film transistors},
  journal = {Journal of Applied Physics},
  year = 2003,
}

@article{CTT100609017,
  author = {J. Nishii and F. M. Hossain and S. Takagi and T. Aita and K. Saikusa and Y. Ohmaki and I. Ohkubo and S. Kishimoto and A. Ohtomo and T. Fukumura and F. Matsukura and Y. Ohno and H. Koinuma and H. Ohno and M. Kawasaki},
  title = {High mobility thin film transistors with transparent ZnO channels},
  journal = {Japanese Journal of Applied Physics Part 2-Letters},
  year = 2003,
}

@inproceedings{CTT100611109,
  author = {A. Tsukazaki and S. Akasaka and K. Nakahara and A. Kamisawa and Y. Ohno and H. Ohno and A. Ohtomo and M. Kawasaki},
  title = {Fractional quantum Hall effect in MgZnO/ZnO heterostructures},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610077,
  author = {A. Tsukazaki and A. Ohtomo and S. Akasaka and K. Nakahara and Y. Ohno and H. Ohno and M. Kawasaki},
  title = {The fractional quantum Hall effect in MgZnO/ZnO based haterostructures},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100611084,
  author = {塚崎 敦 and 赤坂 俊輔 and 中原 健 and 神澤 公 and 大野 裕三 and 大野 英男 and 大友 明 and 川崎雅司},
  title = {2DEG移動度100,000 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>を越えるMgZnO/ZnO界面の実現},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100609735,
  author = {A. Ohtomo and A. Tsukazaki and T. Kita and Y. Ohno and H. Ohno and K. Nakahara and H. Yuji and K. Tamura and S. Akasaka and H. Takasu and M. Kawasaki},
  title = {Quantum Hall effect in ZnO},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100609618,
  author = {A. Ohtomo and A. Tsukazaki and T. Kita and Y. Ohno and H. Ohno and M. Kawasaki},
  title = {Quantum Hall effect in polar oxide heterostructures},
  booktitle = {},
  year = 2007,
}

@misc{CTT100609657,
  author = {塚崎 敦 and 大友 明 and 北 智洋 and 大野 裕三 and 大野 英男 and 川崎 雅司},
  title = {ZnO/MgZnO界面における量子ホール効果},
  year = 2007,
}

@misc{CTT100609672,
  author = {大友 明 and 塚崎 敦 and 北 智洋 and 大野 裕三 and 大野 英男 and 川崎雅司},
  title = {ZnOの量子ホール効果},
  year = 2007,
}

@misc{CTT100609688,
  author = {大友 明 and 川崎 雅司 and 大野 英男},
  title = {酸化亜鉛電界効果デバイス},
  year = 2005,
}

@misc{CTT100609689,
  author = {大友 明 and 川崎 雅司 and 大野 英男},
  title = {酸化亜鉛電界効果デバイスの進展と課題},
  year = 2005,
}