@article{CTT100658722,
  author = {Y. Wu and 竇春萌 and F. Wei and Kuniyuki KAKUSHIMA and 大毛利健治 and パールハットアヘメト and T. Watanabe and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and Keisaku Yamada and 片岡好則 and takeo hattori and HIROSHI IWAI},
  title = {Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@inproceedings{CTT100672369,
  author = {Y. Wu and Hiroki Hasegawa and Kuniyuki KAKUSHIMA and 大毛利健治 and T. Watanabe and Hitoshi Wakabayashi and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and 片岡好則 and Kenji Natori and Keisaku Yamada and HIROSHI IWAI},
  title = {Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673462,
  author = {呉研 and 長谷川明紀 and 角嶋邦之 and 渡辺  孝信 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Mg2Si-Siヘテロ接合トンネルFET特性の構造依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672973,
  author = {Hiroki Hasegawa and Y. Wu and 宋 禛漢 and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {The Workshop on Future Trend of Nanoelectronics:WIMNACT 39},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673477,
  author = {長谷川明紀 and 呉研 and 宋 禛漢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Mg/Si極薄膜積層の熱処理を用いて作製したMg2Siの赤外線吸収特性評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672409,
  author = {Y. Wu and Hiroki Hasegawa and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and 片岡好則 and Kenji Natori and HIROSHI IWAI},
  title = {Influence of structure parameter on Mg2Si-Si Hetero-junction Tunneling FET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100658354,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Size dependent resistivity change of Ni-silicides in nano-region},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654574,
  author = {Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {An analytical model of a tunnel FET with Schottky junction},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658611,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Analyses of Nickel Silicide Formed on Si Nanowires with 10-nm-width},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661681,
  author = {長谷川明紀 and 呉研 and 宋 禛漢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {低バンドギャップ、バンドオフセットを持つ半導体シリサイド/Si接合によるトンネルFET特性向上},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657197,
  author = {Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {An analytical model of a tunnel FET with Schottky junction},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657217,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Ni silicidation for Si Fin and nanowire strucures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657218,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Ni silicidation for Si Fin and nanowire strucures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100628215,
  author = {松本一輝 and 小山将央 and 呉研 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {酸化膜被覆型SiナノワイヤおよびSi Fin構造におけるNiシリサイド成長機構の検討},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654915,
  author = {Y. Wu and Kuniyuki KAKUSHIMA and 大毛利健治 and Akira Nishiyama and HIROSHI IWAI and Keisaku Yamada},
  title = {A Study on Fabrication and Analytic Modeling of novel Schottky contact tunneling Transistors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100613735,
  author = {Y. Wu and Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and 西山彰 and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616055,
  author = {呉研 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {トンネルFET動作に向けたNiシリサイド/Si接触におけるトンネル電流の観測},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631006,
  author = {呉研 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface},
  booktitle = {},
  year = 2010,
}