論文

• Miranda Enrique, shinichi kano, 竇春萌, J. Sune, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Effect of an ultrathin SiO2 interfacial layer on the hysteretic current-voltage characteristics of CeOx-based metal-insulator-metal structures, Thin Solid Films, Vol. 533, pp. 38-42, Apr. 2013.
• Y. Wu, 竇春萌, F. Wei, Kuniyuki KAKUSHIMA, 大毛利健治, パールハットアヘメト, T. Watanabe, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Keisaku Yamada, 片岡好則, takeo hattori, HIROSHI IWAI. Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability, Japanese Journal of Applied Physics, Vol. 52, No. 4S, pp. 04CC28-1-04CC28-5, Apr. 2013.

国際会議発表 (査読有り)

• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer, 2013 International Conference on Solid State Devices and Materials(SSDM), 2013.

国際会議発表 (査読なし・不明)

• unknown unknown, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Si nanowire FET with asymmetric channel, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, 片岡好則, Kenji Natori, Miranda Enrique, takeo hattori, HIROSHI IWAI. Influence electrode materials on CeOx based resistive switching, CSTIC 2012, 2013.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of metal electrode material on resistive switching properties of Ce oxides, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, Ahmet Parhat, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Transient Switching Characteristics of Ce-oxide Resistive Switching Devices, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Miranda Enrique, shinichi kano, 竇春萌, J. Sune, Kuniyuki KAKUSHIMA, HIROSHI IWAI. New experimental evidences of conductance quantization in electroformed oxide stacks, E-MRS 2012 Spring Meeting, 2012.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI, takeo hattori. Si nanowire FET with asymmetric channel, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI, takeo hattori. Si nanowire FET with asymmetric channel, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of metal electrode material on resistive swirching properties of Ce oxides, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Wei Li, 中島一裕, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, 片岡好則, Kenji Natori, takeo hattori, HIROSHI IWAI. Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method, CSTIC 2012, 2012.
• 竇春萌, Soshi Sato, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Si nanowire FET with asymmetric channel, Tsukuba Nanotechnology Symposium(TNS’11), 2011.

国内会議発表 (査読なし・不明)

• 劉 璞誠, 竇春萌, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. コンダクタンス法によるAlGaN/GaNヘテロ接合界面トラップに関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 叶真一, MokhammadSholihul Hadi, 竇春萌, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 希土類酸化物(CeOX)を用いたMIM構造の抵抗スイッチング特性, 第72回応用物理学会学術講演会, 2011.
• 竇 春萌, マイマイティ マイマイティレャアティ, ダリューシュザデ, 佐藤創志, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 希土類(Ce,Eu)酸化物MIM構造の抵抗スイッチング特性, 第７１回応用物理学会学術講演会, Sept. 2010.
• 竇春萌, 向井弘樹, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Feasibility study of Ce oxide for resistive RAM application, 複合創造領域シンポジウム, 2010.

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