@inproceedings{CTT100673472,
  author = {吉原亮 and 元木雅章 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Pを導入したNiSi2/n-Geコンタクトの電気特性と不純物拡散の様子},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672967,
  author = {吉原亮 and Masaaki Motoki and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Interface control process toward un-pinned metal/germanium Schottky contact},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100658700,
  author = {Kuniyuki KAKUSHIMA and 吉原亮 and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {A Low Temperature Ohmic Contact Process for n-type Ge Substrates},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661678,
  author = {元木雅章 and 吉原亮 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Pを導入したNiSi2電極を用いたn-Ge基板の電流電圧特性の熱処理依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654594,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characterization of atomically flat NiSi2 Schottky diode},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654678,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and 中塚理 and パールハットアヘメト and Hiroshi Nohira and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Ultrathin-Nickel-Silicide Schottky Diodes on Si(100)},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658334,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Stacked Ni-Silicidation Process for Schottky Barrier FET},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654590,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A novel Ni silicidation technology for Schottky diode formation},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658390,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A Novel Ohmic Contact Process for n-Ge Substrates},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657633,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A Proposal of Schottky Barrire Height Tuning Method with Interface Controlled Ni/Si Stacked Silicidation Process},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657215,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {A novel Ni silicidation technology for Schottky diode formation},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657252,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characterization of atomically flat NiSi2 Schottky diode”, Ni silicidation for Si Fin and nanowire strucures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657583,
  author = {Kuniyuki KAKUSHIMA and Yuta Tamura and 吉原亮 and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Interface Controlled Stacked Ni Silicidation Process with Schottky Barrier Height Controllability},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657639,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Thermally stable NiSi2 for Ge contact with Schottky barrirer height modulation capability},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100628830,
  author = {吉原 亮 and 角嶋邦之 and パールハットアヘメト and 中塚理 and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Ni/Si積層から形成されるNiシリサイドのショットキーダイオードの電流特性},
  booktitle = {},
  year = 2011,
}