国際会議発表 (査読なし・不明)

• 吉原亮, Masaaki Motoki, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Interface control process toward un-pinned metal/germanium Schottky contact, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Kuniyuki KAKUSHIMA, 吉原亮, KAZUO TSUTSUI, HIROSHI IWAI. A Low Temperature Ohmic Contact Process for n-type Ge Substrates, 2013 13th International Workshop on Junction Technology(IWJT2013), 2013.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characterization of atomically flat NiSi2 Schottky diode, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, 中塚理, パールハットアヘメト, Hiroshi Nohira, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Properties of Ultrathin-Nickel-Silicide Schottky Diodes on Si(100), 15th International Conference on Thin Films, 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Stacked Ni-Silicidation Process for Schottky Barrier FET, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, パールハットアヘメト, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A novel Ni silicidation technology for Schottky diode formation, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A Novel Ohmic Contact Process for n-Ge Substrates, R. Yoshihara, Y. Tamura, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “A Novel Ohmic Contact Process for n-Ge Substrates”, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A Proposal of Schottky Barrire Height Tuning Method with Interface Controlled Ni/Si Stacked Silicidation Process, ECS 222nd Meeting, ECS Transactions, 2012.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, HIROSHI IWAI. A novel Ni silicidation technology for Schottky diode formation, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characterization of atomically flat NiSi2 Schottky diode”, Ni silicidation for Si Fin and nanowire strucures, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kuniyuki KAKUSHIMA, Yuta Tamura, 吉原亮, KAZUO TSUTSUI, HIROSHI IWAI. Interface Controlled Stacked Ni Silicidation Process with Schottky Barrier Height Controllability, K. Kakushima, Y. Tamura, R. Yoshihara, K. Tsutsui, H. Iwai, 2012.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Thermally stable NiSi2 for Ge contact with Schottky barrirer height modulation capability, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 9, pp. 217-221, 2012.

国内会議発表 (査読なし・不明)

• 吉原亮, 元木雅章, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Pを導入したNiSi2/n-Geコンタクトの電気特性と不純物拡散の様子, 第61回応用物理学会春季学術講演会, 2014.
• 元木雅章, 吉原亮, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Pを導入したNiSi2電極を用いたn-Ge基板の電流電圧特性の熱処理依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 吉原 亮, 角嶋邦之, パールハットアヘメト, 中塚理, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Ni/Si積層から形成されるNiシリサイドのショットキーダイオードの電流特性, 第72回応用物理学会学術講演会, 2011.

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