@article{CTT100738894,
  author = {T. Oshima and R. Wakabayashi and M. Hattori and Akihiro Hashiguchi and Naoto Kawano and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo and Toshiyuki Oishi and Makoto Kasu},
  title = {Formation of indium–tin oxide ohmic contacts for β-Ga<sub>2</sub>O<sub>3</sub>},
  journal = {Japanese Journal of Applied Physics},
  year = 2016,
}

@article{CTT100727003,
  author = {Mai Hattori and Takayoshi OSHIMA and Ryo Wakabayashi and K. Yoshimatsu and Kohei Sasaki and Takekazu Masui and Akito Kuramata and Shigenobu Yamakoshi and Koji Horiba and Hiroshi Kumigashira and A. Ohtomo},
  title = {Epitaxial growth and electric properties of γ-Al<sub>2</sub>O<sub>3</sub> (110) films on β- Ga<sub>2</sub>O<sub>3</sub> (010) substrates},
  journal = {Japanese Journal of Applied Physics},
  year = 2016,
}

@article{CTT100690808,
  author = {R. Wakabayashi and T. Oshima and M. Hattori and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
  title = {Oxygen-radical-assisted pulsed-laser deposition of β-Ga<sub>2</sub>O<sub>3</sub> and β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> films},
  journal = {Journal of Crystal Growth},
  year = 2015,
}

@article{CTT100662826,
  author = {T. Oshima and K. Kaminaga and H. Mashiko and A. Mukai and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and A. Ohtomo},
  title = {β-Ga<sub>2</sub>O<sub>3</sub> single crystal as a photoelectrode for water splitting},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@article{CTT100653483,
  author = {T. Oshima and K. Kaminaga and A. Mukai and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and S. Fujita and A. Ohtomo},
  title = {Formation of semi-insulating layers on semiconducting β-Ga<sub>2</sub>O<sub>3</sub> single crystals by thermal oxidation},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@inproceedings{CTT100715619,
  author = {大島孝仁 and 若林諒 and 服部真依 and 橋口 明広 and 河野 直士 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 吉松 公平 and 大友 明},
  title = {β-Ga<sub>2</sub>O<sub>3</sub>用ITOオーミック電極},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100719033,
  author = {T. Oshima and R. Wakabayashi and M. Hattori and Akihiro Hashiguchi and Naoto Kawano and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo and Toshiyuki Oishi and Makoto Kasu},
  title = {ITO ohmic contacts for β-Ga<sub>2</sub>O<sub>3</sub>},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100698657,
  author = {R. Wakabayashi and T. Oshima and M. Hattori and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
  title = {Strong Fermi-Level Pinning at Metal/β-Ga<sub>2</sub>O<sub>3</sub> (̅201) Interface},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100698689,
  author = {M. Hattori and R. Wakabayashi and T. Oshima and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
  title = {Evaluation of Band Offset at β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> Heterointerface},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100698688,
  author = {M. Hattori and T. Oshima and R. Wakabayashi and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
  title = {Epitaxial Relationship and Capacitance-Voltage Characteristicsof γ-Al<sub>2</sub>O<sub>3</sub> Films Grown on (010) β-Ga<sub>2</sub>O<sub>3</sub> Substrates},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100698656,
  author = {R. Wakabayashi and T. Oshima and M. Hattori and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
  title = {Growth and Electric Properties of Conductive β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> Films},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100696498,
  author = {服部 真依 and 大島 孝仁 and 若林 諒 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 吉松 公平 and 大友 明},
  title = {β-Ga<sub>2</sub>O<sub>3</sub>上γ-Al<sub>2</sub>O<sub>3</sub>膜のエピタキシャル構造と容量電圧特性評価},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100696497,
  author = {若林 諒 and 大島 孝仁 and 服部 真依 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 吉松 公平 and 大友 明},
  title = {金属/β-Ga<sub>2</sub>O<sub>3</sub> (̅201)界面における強いフェルミ準位ピンニング効果},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693223,
  author = {大島 孝仁 and 服部 真依 and 若林 諒 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 堀場 弘司 and 組頭 広志 and 吉松 公平 and 大友 明},
  title = {β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub>ヘテロ接合におけるタイプI型バンドラインナップ},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693226,
  author = {若林 諒 and 大島 孝仁 and 服部 真依 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 吉松 公平 and 大友 明},
  title = {酸素ラジカル支援パルスレーザ堆積法による酸化ガリウム系混晶薄膜の成長},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100685941,
  author = {若林 諒 and 服部 真依 and 大島 孝仁 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 吉松 公平 and 大友 明},
  title = {酸素ラジカル支援PLD法による酸化ガリウム系混晶薄膜の成長},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100685942,
  author = {服部 真依 and 若林 諒 and 大島 孝仁 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 堀場 弘司 and 組頭 広志 and 吉松 公平 and 大友 明},
  title = {β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub>/ヘテロ接合のバンドオフセット評価},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100680941,
  author = {R. Wakabayashi and M. Hattori and T. Oshima and A. Mukai and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
  title = {Oxygen-radical-assisted pulsed-laser deposition of β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> alloy films},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672688,
  author = {T. Oshima and K. Kaminaga and H. Mashiko and A. Mukai and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and A. Ohtomo},
  title = {β-Ga<sub>2</sub>O<sub>3</sub> photoeledtrode for water splitting},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100665256,
  author = {A. Mukai and T. Oshima and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and A. Ohtomo},
  title = {Doping control in device-grade β-Ga<sub>2</sub>O<sub>3</sub> homoepitaxial films grown by pulsed-laser deposition},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660334,
  author = {大島 孝仁 and 神永 健一 and 増子 尚徳 and 向井 章 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 大友 明},
  title = {β-Ga<sub>2</sub>O<sub>3</sub>単結晶光電極の特性評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660332,
  author = {向井 章 and 大島 孝仁 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 大友 明},
  title = {PLD法による(201)面β-Ga<sub>2</sub>O<sub>3</sub>ホモエピタキシャル成長の温度依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660373,
  author = {T. Oshima and A. Mukai and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and A. Ohtomo},
  title = {β-Al<sub>2X</sub>Ga<sub>2-2X</sub>O<sub>3</sub> thin films for β-Ga<sub>2</sub>O<sub>3</sub> hetero-device applications},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100673391,
  author = {T. Oshima and K. Kaminaga and A. Mukai and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and S. Fujita and A. Ohtomo},
  title = {Semi-insulation behavior in conducting β-Ga<sub>2</sub>O<sub>3</sub> single crytal surfaces by thermal oxidation},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657069,
  author = {T. Oshima and K. Kaminaga and A. Mukai and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and S. Fujita and A. Ohtomo},
  title = {Semi-insulation of conducting β-Ga<sub>2</sub>O<sub>3</sub> single crystal surfaces by thermal oxidation},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652779,
  author = {大島 孝仁 and 神永 健一 and 向井 章 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 藤田 静雄 and 大友 明},
  title = {熱酸化による<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>単結晶表面の半絶縁層形成},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652775,
  author = {向井 章 and 大島 孝仁 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 大友 明},
  title = {<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> (201)基板上のAl<sub>2<i>x</i></sub>Ga<sub>2-2<i>x</i></sub>O<sub>3</sub>薄膜の成長制御},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100635903,
  author = {藤田 静雄 and 東脇 正高 and 佐々木 公平 and 倉又 朗人 and 増井 建和 and 山腰 茂伸 and 大島 孝仁 and 大友明},
  title = {ワイドギャップ半導体酸化ガリウムの基本特性と応用},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100634015,
  author = {藤田 静雄 and 東脇 正高 and 佐々木 公平 and 倉又 朗人 and 増井 建和 and 山脇 茂伸 and 大島 孝仁 and 大友 明},
  title = {酸化ガリウム半導体の機能とデバイス応用},
  booktitle = {},
  year = 2012,
}