論文

• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, takeo hattori, Kenji Natori, HIROSHI IWAI. Comparative study of electrical characteristics in(100) and (110)surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure, Solid-State Electronics, Vol. 84, pp. 53-57, June 2013.
• DARYOUSH ZADEH, Hiroshi Oomine, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, Hiroshi Nohira, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode, Solid-State Electronics, Vol. 82, pp. 29-33, Apr. 2013.
• Y. Wu, 竇春萌, F. Wei, Kuniyuki KAKUSHIMA, 大毛利健治, パールハットアヘメト, T. Watanabe, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Keisaku Yamada, 片岡好則, takeo hattori, HIROSHI IWAI. Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability, Japanese Journal of Applied Physics, Vol. 52, No. 4S, pp. 04CC28-1-04CC28-5, Apr. 2013.
• マイマイティ マイマイティレャアティ, 久保田透, 関拓也, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 片岡好則, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Oxide and interface trap densities estimation in ultrathin W/ La2O3/Si MOS capacitors, Microelectronics Reliability, Vol. 52, No. 6, pp. 1039-1042, June 2012.
• マイマイティ マイマイティレャアティ, Miyuki Kouda, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Ahmet Parhat, 片岡好則, 西山彰, KAZUO TSUTSUI, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Valance number transition and silicate formation of cerrium oxide on Si(100), Vacuum, Vol. 86, No. 10, pp. 1513-1516, Apr. 2012.
• マイマイティ マイマイティレャアティ, Miyuki Kouda, Takamasa Kawanago, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 片岡 好則, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs, Semiconductor Science and Technology, Vol. 27, No. 4, Mar. 2012.

国際会議発表 (査読有り)

• DARYOUSH ZADEH, Hiroshi Oomine, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Low DitHigh-k/In0.53Ga0.47As Gate Stack with CET down to 0.73 nm and Thermally Stable Silicide Contact by Suppression of Interfacial Reaction, IEDM 2013, 2014.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT, ESSDERC 2013, 2013.
• ダリューシュザデ, Hiroshi Oomine, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density, 2013 International Conference on Solid State Devices and Materials(SSDM), 2013.
• unknown unknown, shinichi kano, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer, 2013 International Conference on Solid State Devices and Materials(SSDM), 2013.

国際会議発表 (査読なし・不明)

• Jiangning Chen, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI, 齋藤渉. Electrical characteristics of AlGaN/GaN HEMT with La2O3 gate dielectricsn, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• wei li, 佐々木亮人, 大図秀行, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Resistivity Measurement of Monoclinic Thin Tungsten Oxide Film Due to Annealing Processesn, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• K. Tuokedaerhan, Shuhei Hosoda, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, K. Tuokedaerhan, S. Hosoda, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• Yoshinori Nakamura, Kuniyuki KAKUSHIMA, 片岡好則, Akira Nishiyama, Hitoshi Wakabayashi, Nobuyuki Sugii, HIROSHI IWAI. Measurement of flat-band voltage shift using multi-stacked dielectric film, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Shuhei Hosoda, Kamale Tuokedaerhan, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kenji Natori, takeo hattori, HIROSHI IWAI. Atomically flat interface of La-silicate/Si with W2C gate electrodes, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Y. Wu, Hiroki Hasegawa, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, 片岡好則, Kenji Natori, HIROSHI IWAI. Influence of structure parameter on Mg2Si-Si Hetero-junction Tunneling FET, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 関拓也, Kuniyuki KAKUSHIMA, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Physical understanding of La-silicate gate dielectrics thermally formed by interface reaction on Si(110) and (111), The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hiroshi Oomine, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, Akira Nishiyama, Nobuyuki Sugii, 片岡好則, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Effect of pretreatment for high-/k//InGaAs interface property, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Taichi Inamura, Takafumi Katou, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A study on silicide semiconductors for high efficiency thin film photovoltaic devices, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Mari Okamoto, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, HIROSHI IWAI. An Ohmic Contact Process for AlGaN/GaN Structures using TiS, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, 2014.
• K. Tuokedaerhan, Shuhei Hosoda, Yoshinori Nakamura, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Influence of Carbon Incorporation in W Gate Electrode for La-silicate Gate Dielectrics, 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY, 2014.
• Y. Wu, Hiroki Hasegawa, Kuniyuki KAKUSHIMA, 大毛利健治, T. Watanabe, Hitoshi Wakabayashi, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, 片岡好則, Kenji Natori, Keisaku Yamada, HIROSHI IWAI. Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance, 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY-, 2014.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• unknown unknown, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 宋 禛漢, Kazuki Matsumoto, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, 杉井信之, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation, ECS 224nd Meeting, ECS Transactions, Vol. 58, No. 7, pp. 87-91, Oct. 2013.
• Taichi Inamura, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A stacked sputtered process for β-FeSi2 formation, ECS 224nd Meeting, ECS Transactions, Oct. 2013.
• Taichi Inamura, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. A stacked sputtered process for β-FeSi2 formation, ECS 224nd Meeting, ECS Transactions, Oct. 2013.
• Shuhei Hosoda, K. Tuokedaerhan, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Reliability of La-silicate MOS capacitors with tungsten carbide gate electrode for scaled EOT, ECS 224nd Meeting, ECS Transactions, Vol. 58, No. 7, pp. 61-64, Oct. 2013.
• Hiroshi Oomine, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characterization of atomic layer deposited La2O3 films on In0.53Ga0.47AAs substrates, ECS 224nd Meeting, ECS Transactions, Vol. 58, No. 7, pp. 385-389, Oct. 2013.
• shinichi kano, 竇春萌, unknown unknown, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, 片岡好則, Kenji Natori, Miranda Enrique, takeo hattori, HIROSHI IWAI. Influence electrode materials on CeOx based resistive switching, CSTIC 2012, 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface properties of La-silicate gate dielectrics on Si(110)surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• K. Tuokedaerhan, Shuhei Hosoda, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Work Function Extraction of W,Ta and Ti Carbides Formed by Multi Stacked Process, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Jiangning Chen, 鹿 国強, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Jiangning Chen, 鹿 国強, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Jiangning Chen, 鹿 国強, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yuya Suzuki, ダリューシュザデ, Hiroshi Oomine, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface Engineering of La2O3/InGaAs Capacitors with High Temperature Stability, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 田中祐樹, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface controlled metal contact for n-type diamonds, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Stacked Ni-Silicidation Process for Schottky Barrier FET, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Kana Tsuneishi, Jiangning Chen, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A Robust Ohmic Contact Process for AlGaN/GaN using Ti-silicide electrodes, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Size dependent resistivity change of Ni-silicides in nano-region, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Taichi Inamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Formation of Fe-silicides using Multi-Stacking Sputtering Process, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Taichi Inamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Formation of Fe-silicides using Multi-Stacking Sputtering Process, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Hiroshi Oomine, ダリューシュザデ, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Hiroshi Oomine, ダリューシュザデ, Yuya Suzuki, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 関拓也, Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Infrared absorption study of La-silicate gate dielectrics, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Atsushi Takemasa, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Impact of Surface Treatments for Metal Contact on p-type Diamonds, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Shuhei Hosoda, K. Tuokedaerhan, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Improvenents in interface, states with W-carbide metal gate for La2O3/si MOS Capacitor, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A Novel Ohmic Contact Process for n-Ge Substrates, R. Yoshihara, Y. Tamura, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “A Novel Ohmic Contact Process for n-Ge Substrates”, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Mari Okamoto, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Extraction of Energy Band Diagram of AlGaN/GaN with SiO2 Capped Annealing using X-ray Photoelectron Spectroscopy, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), February 18, 2013, , Japan, 2013.
• 関拓也, Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. International Symposium on Next-Generation Electronics(ISNE 2013), International Symposium on Next-Generation Electronics(ISNE 2013), 2013.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Analyses of Nickel Silicide Formed on Si Nanowires with 10-nm-width, International Symposium on Next-Generation Electronics(ISNE 2013), 2013.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface properties of La-silicate gate dielectrics on Si(110)surface, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Jiangning Chen, Kana Tsuneishi, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 3, pp. 353-357, 2012.
• Tohtarhan Kamal, R. Tan, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Interface Properties of La-silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 4, pp. 281-284, 2012.
• 吉原亮, Yuta Tamura, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Thermally stable NiSi2 for Ge contact with Schottky barrirer height modulation capability, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 9, pp. 217-221, 2012.
• Yuya Suzuki, ダリューシュザデ, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Effect of In0.53Ga0.47AAs surface nitridation on electrical characteristics of high-k/capacitors, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 4, pp. 145-150, 2012.
• Yuta Tamura, 吉原亮, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. A Proposal of Schottky Barrire Height Tuning Method with Interface Controlled Ni/Si Stacked Silicidation Process, ECS 222nd Meeting, ECS Transactions, 2012.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. (100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture, ESSDERC 2012, 2012.
• Takamasa Kawanago, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, 西山彰, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. (100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture, ESSDERC 2012, 2012.
• Wei Li, 中島一裕, 竇春萌, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, 片岡好則, Kenji Natori, takeo hattori, HIROSHI IWAI. Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method, CSTIC 2012, 2012.
• Ryuji Hosoi, Yuya Suzuki, DARYOUSH ZADEH, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Characterization of matal Schottky junction for In0.53Ga0.47AAs substrates, CSTIC 2012, 2012.
• Jiangning Chen, Kana Tsuneishi, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics, ECS 222nd Meeting, ECS Transactions, Vol. 50, No. 3, pp. 353-357, 2012.
• Kana Tsuneishi, Jiangning Chen, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure, ECS 222nd Meeting, ECS Transactions, Vol.50, No.3, pp., October 11, 2012,, ECS Transactions, Vol. 50, No. 3, pp. 447-450, 2012.

国内会議発表 (査読なし・不明)

• 伊藤勇磨, 堀隼人, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 西山彰, 杉井信之, 名取研二, 岩井洋. 微細Si構造を利用した太陽電池に適した接合プロセスの提案, 第61回応用物理学会春季学術講演会, 2014.
• 松川佳弘, 岡本真里, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 齋藤渉. AlGaN/GaN上のTi/C/TiN電極のコンタクト抵抗：Ti/C膜厚及び比率依存性, 第61回応用物理学会春季学術講演会, 2014.
• 小路智也, 伊藤勇磨, 堀隼人, 宮澤遼太, 嘉藤貴史, 角嶋邦之, 若林整, 筒井一生, 片岡好則, 岩井洋. Surface States, Potential and Interface Control for Si Nanowire PV, 文部科学省「革新的エネルギー研究開発拠点形成事業」第2回国際シンポジウム ナノワイヤー太陽電池 ～最先端の太陽電池研究で福島復興へ～, 2014.
• 岡本真里, 松川佳弘, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 大橋弘通, 岩井洋, 齋藤渉. TiB2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化, 第61回応用物理学会春季学術講演会, 2014.
• 稲村太一, 嘉藤貴史, 佐々木亮人, 青木克明, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. β-FeSi2の抵抗率熱処理依存性, 第61回応用物理学会春季学術講演会, 2014.
• 武井優典, 神谷真行, 寺山一真, 米澤宏昭, 齋藤 渉, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 岩井洋. AlGaN/GaN系HEMTにおけるコンタクト特性のAlGaN層厚依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 神谷真行, 寺山一真, 武井優典, 齋藤 渉, 角嶋邦之, 若林整, 片岡好則, 筒井一生, 岩井洋. AlGaN/GaN HEMTへの凹凸AlGaN層導入による２次元電子ガス濃度分布評価および低抵抗コンタクト形成の可能性, 第74回応用物理学会秋季学術講演会, 2013.
• 大橋匠, 若林整, 角嶋邦之, 杉井信之, 西山彰, 片岡好則, 名取研二, 筒井一生, 岩井洋. 単層MoS2チャネルを用いたn-MOSFETの性能見積もり, [第74回応用物理学会秋季学術講演会, 2013.
• 松川佳弘, 岡本真里, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 齋藤渉. AlGaN/GaN上のTiC電極の電流電圧特性の熱処理温度依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 嘉藤貴史, 稲村太一, 佐々木 亮人, 青木 克明, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Fe層とSi層の積層スパッタにより形成されたβ-FeSi2のキャリア密度に関する研究, 第74回応用物理学会秋季学術講演会, 2013.
• 劉 璞誠, 米澤宏昭, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. AlGaNのドライエッチングへのBcl3の影響に関する研究, 第74回応用物理学会秋季学術講演会, 2013.
• 元木雅章, 吉原亮, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Pを導入したNiSi2電極を用いたn-Ge基板の電流電圧特性の熱処理依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 中村嘉基, 細田修平, Tuokedaerhan Kamale, 角嶋邦之, 片岡好則, 西山彰, 若林整, 杉井信之, 筒井一生, 名取研二, 岩井洋. W2Cゲート電極とLa-silicateゲート絶縁膜を用いたMOSキャパシタの信頼性評価, 第74回応用物理学会秋季学術講演会, 2013.
• 小路智也, 石川昂, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. チャージポンピング法を用いた立体Si構造の絶縁膜界面準位の位置推定, 第74回応用物理学会秋季学術講演会, 2013.
• 岡本真里, 松川佳弘, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. TiSi2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化, 第74回応用物理学会秋季学術講演会, 2013.
• 今村浩章, 稲村太一, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Krガスを用いた積層シリサイド化スパッタプロセスにより形成したNiSi2の薄膜評価, 第74回応用物理学会秋季学術講演会, 2013.
• 鹿国強, 大嶺洋, ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ, 角嶋邦之, 西山彰, 杉井信之, 片岡好則, 若林整, 筒井一生, 名取研二, 岩井洋. ALD堆積条件によるLa2O３/In0.53Ga0.47Asキャパシタの電気特性への影響, 第74回応用物理学会秋季学術講演会, 2013.
• 宋 禛漢, 松本一輝, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 服部健雄, 岩井洋. Niシリサイドナノワイヤ抵抗率のNi膜厚依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 長谷川明紀, 呉研, 宋 禛漢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 低バンドギャップ、バンドオフセットを持つ半導体シリサイド/Si接合によるトンネルFET特性向上, 第74回応用物理学会秋季学術講演会, 2013.
• 石川昂, 小路智也, 角嶋邦之, 若林整, 片岡好則, 西山彰, 杉井信之, 筒井一生, 名取研二, 岩井洋. チャージポンピング法を用いた三次元Si構造の界面準位密度測定, 第74回応用物理学会秋季学術講演会, 2013.

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