@inproceedings{CTT100654913,
  author = {W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI},
  title = {Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ~Impact of charge-centroid in the channel due to quantum effect on 1/f noise ~},
  booktitle = {},
  year = 2013,
}