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研究業績一覧 (1件)
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国際会議発表 (査読なし・不明)
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W. Feng,
R. Hettiarachchi,
Yeonghun Lee,
Soshi Sato,
Kuniyuki KAKUSHIMA,
M. Sato,
K. Fukuda,
M. Niwa,
K. Yamabe,
Kenji Shiraishi,
HIROSHI IWAI.
Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ~Impact of charge-centroid in the channel due to quantum effect on 1/f noise ~,
2011 IEDM,
2013.
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