@inproceedings{CTT100672968, author = {宋 禛漢 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI}, title = {Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films}, booktitle = {}, year = 2014, } @inproceedings{CTT100673477, author = {長谷川明紀 and 呉研 and 宋 禛漢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋}, title = {Mg/Si極薄膜積層の熱処理を用いて作製したMg2Siの赤外線吸収特性評価}, booktitle = {}, year = 2014, } @inproceedings{CTT100672973, author = {Hiroki Hasegawa and Y. Wu and 宋 禛漢 and Kuniyuki KAKUSHIMA and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI}, title = {The Workshop on Future Trend of Nanoelectronics:WIMNACT 39}, booktitle = {}, year = 2014, } @inproceedings{CTT100669174, author = {宋 禛漢 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and 杉井信之 and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI}, title = {Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation}, booktitle = {ECS Transactions}, year = 2013, } @inproceedings{CTT100658393, author = {宋 禛漢 and 小山将央 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and 中塚理 and 大毛利健治 and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Keisaku Yamada and HIROSHI IWAI}, title = {Atomically flat Ni-silicide/Si interface using NiSi2 sputtering}, booktitle = {}, year = 2013, } @inproceedings{CTT100662341, author = {宋 禛漢 and 松本一輝 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 服部健雄 and 岩井洋}, title = {Niシリサイドナノワイヤ抵抗率のNi膜厚依存性}, booktitle = {}, year = 2013, } @inproceedings{CTT100661681, author = {長谷川明紀 and 呉研 and 宋 禛漢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋}, title = {低バンドギャップ、バンドオフセットを持つ半導体シリサイド/Si接合によるトンネルFET特性向上}, booktitle = {}, year = 2013, }