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山﨑詩郎 研究業績一覧 (18件)
論文
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K. Sugawara,
I. Seo,
S. Yamazaki,
K. Nakatsuji,
Y. Gohda,
H. Hirayama.
Effective quantum-well width of confined electrons in ultrathin Ag(111) films on Si(111)7x7 substrates,
Surface Science,
Vol. 704,
p. 121745 (6 pages),
Oct. 2020.
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T. Ogino,
V. M. Kuzumo,
S. Yamazaki,
K. Nakatsuji,
H. Hirayama.
Variation of the metal-insulator transition temperature of quasi-one-dimensional indium chains upon carrier doping from Si(111) substrates,
J. Phys.: Condens. Matter,
Vol. 32,
p. 415001 (8pp),
July 2020.
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Y. Yoshiike,
H. Tajiri,
S. Yamazaki,
K. Nakatsuji,
H. Hirayama.
X-ray structural analysis of epitaxially grown Ag film/Si(111)Root3xRoot3-B substrate interface,
Jpn. J. Appl. Phys.,
vol. 57,
pp. 075701(1)-(8),
June 2018.
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Kentaro Nagase,
Ikuya Kokubo,
Shiro Yamazaki,
Kan Nakatsuji,
Hiroyuki Hirayama.
Structure and growth of Bi(110) islands on Si(111)Root3xRoot3-B substrates,
Physical Review B,
vol. 97,
p. 195418 (8 pages),
May 2018.
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Yuka Takagi,
Shiro Yamazaki,
Kan Nakatsuji,
Hiroyuki Hirayama.
Size, Shape, and Number Density of Deposits in the Graphene Solution Liquid Droplet Method,
Materials Today Communications,
Vol. 13(C),
pp. 65-71,
Sept. 2017.
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Kishu Sugawara,
Kentaro Nagase,
Shiro Yamazaki,
Kan Nakatsuji,
Hiroyuki Hirayama.
Interaction of Stark-shifted image potential states with quantum well states in ultrathin Ag(111) islands on Si(111)Root3xRoot3-B substrates,
Physical Review B,
vol. 96,
p. 075444,
Aug. 2017.
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Iwata, K.,
Shiro Yamazaki,
Shiotari, A.,
Sugimoto, Y..
Mechanical properties of In/Si(111)-(8×2) investigated by atomic force microscopy,
Japanese Journal of Applied Physics,
Vol. 56,
No. 1,
2017.
国際会議発表 (査読有り)
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T. Yamagami,
S. Yotsutani,
S. Yamazaki,
K. Nakatsuji,
H. Hirayama.
Characterization of Mono- and multilayer hexagonal Boron Nitride on Cu (111) substrate,
12th International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC-19),
Oct. 2019.
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K. Nagase,
S. Yamazaki,
K. Nakatsuji,
H. Hirayama.
Structural change of Bi ultrathin films in the two-step growth on Si(111)√3 x √3-B substrates,
12th International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC-19),
Oct. 2019.
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K. Nagase,
I. Kokubo,
S. Yamazaki,
K. Nakatsuji,
H. Hirayama.
Atomic Structure and Growth of Bi(110) Islands on Si(111)Root3×Root3-B Substrates,
14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14),
Oct. 2018.
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K. Nakatsuji,
Y. Shimokawa,
T. Fujiwara,
K. Nagase,
S. Yamazaki,
Y. Watanabe,
K. Mase,
K. Takahashi,
H. Hirayama.
Electronic Structure of Bi(110) Islands Grown on a Si(111)Root3×Root3-B Substrate,
14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14),
Oct. 2018.
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T. Ogino,
S. Yamazaki,
K. Nakatsuji,
H. Hirayama.
Suppression of Metal-Insulator Transition by Electron Doping from Substrates to Indium Atomic Wires: Si(111)4×1-In,
14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14),
Oct. 2018.
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T.Ogino,
S. Yamazaki,
K. Nakatsuji,
H. Hirayama.
Electron doping induced control of Metal-Insulator transition on Si(111)4x1-In surface,
The 8th International Symposium on Surface Science (ISSS-8),
Oct. 2017.
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K. Nagase,
S. Yamazaki,
K. Nakatsuji,
H. Hirayama.
Even-odd-parity and electronic structure of Bi(110) ultra-thin films,
The 8th International Symposium on Surface Science (ISSS-8),
Oct. 2017.
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Y. Shimokawa,
T. Fujiwara,
K. Nagase,
S. Yamazaki,
Y. Watanabe,
M. Nakatake,
K. Mase,
K. Takahashi,
K. Nakatsuji,
H. Hirayama.
Electronic structure of Bi(110) ultra-thin films grown on Si(111)Root3×Root3-B surfaces,
The 8th International Symposium on Surface Science (ISSS-8),
Oct. 2017.
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K. Sugawara,
K. Nagase,
S. Yamazaki,
K. Nakatsuji,
H. Hirayama.
Interaction of Image-Potential States with Quantum-Well State in Ultra-thin Ag(111) films on Si(111)Root3xRoot3-B substrate,
The 8th International Symposium on Surface Science (ISSS-8),
Oct. 2017.
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Y. Takagi,
S. Yamazaki,
K. Nakatsuji,
H. Hirayama.
Fabrication of Monolayer Graphene Using a Liquid Droplet Method,
The 15th International Conference on the Formation of Semiconductor Interfaces (ICFSI-15),
Nov. 2015.
国際会議発表 (査読なし・不明)
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K. Nakatsuji,
Y. Shimokawa,
T. Fujiwara,
K. Nagase,
S. Yamazaki,
Y. Watanabe,
K. Mase,
K. Takahashi,
H. Hirayama.
Electronic structure of Bi(110) ultra-thin films grown on a Si(111)√3 x √3-B substrate,
21st International Vacuum Congress,
July 2019.
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