@article{CTT100905133,
  author = {Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Edward Y. Chang and Kuniyuki Kakushima},
  title = {Robust formation of ferroelectric HfO2 films by Y2O3 sub-monolayer lamination},
  journal = {Applied Physics Express},
  year = 2022,
}

@article{CTT100896543,
  author = {Takamasa Kawanago and Ryosuke Kajikawa and Kazuto Mizutani and Sung-Lin Tsai and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact},
  journal = {IEEE Journal of the Electron Devices Society},
  year = 2022,
}

@article{CTT100905134,
  author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Yi Chang and Kuniyuki Kakushima},
  title = {Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100905137,
  author = {Atsuki Miyata and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima and Takuya Hoshii},
  title = {Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100905136,
  author = {Ryota Shibukawa and Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100905135,
  author = {Si-Meng Chen and Sung-Lin Tsai and Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Edward Yi Chang and Kuniyuki Kakushima},
  title = {GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100883067,
  author = {Si-Meng Chen and Sung Lin Tsai and Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Edward Yi Chang and Kuniyuki KAKUSHIMA},
  title = {GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100874628,
  author = {M. Nishizawa and T. Hoshii and H. Wakabayashi and K. Tsutsui and Yoshiaki Daigo and Ichiro Mizushima and T. Yoda and K. Kakushima},
  title = {Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100905138,
  author = {Takamasa Kawanago and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Experimental demonstration of high-gain CMOS inverter operation at low V dd down to 0.5 V consisting of WSe2 n/p FETs},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100875619,
  author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Yi Chang and Kuniyuki Kakushima},
  title = {Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100883068,
  author = {Ryota Shibukawa and Sung Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA},
  title = {Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100880933,
  author = {Atsuki Miyata and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA},
  title = {Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100875614,
  author = {Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Edward Y. Chang and Kuniyuki Kakushima},
  title = {Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100875615,
  author = {Takamasa KAWANAGO and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya HOSHII and Kuniyuki Kakushima and Kazuo TSUTSUI and Hitoshi WAKABAYASHI},
  title = {Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100905139,
  author = {Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Edward Y. Chang and Kuniyuki Kakushima},
  title = {Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100855460,
  author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Yi Chang and Kuniyuki Kakushima},
  title = {On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100905140,
  author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Y. Chang and Kuniyuki Kakushima},
  title = {Publisher's Note: “Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering” [Appl. Phys. Lett. 118, 082902 (2021)]},
  journal = {Applied Physics Letters},
  year = 2021,
}

@article{CTT100855476,
  author = {Junji Kataoka and Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {A possible origin of the large leakage current in ferroelectric Al1-xScxN films},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2021,
}

@article{CTT100855475,
  author = {Jinhan Song and Atsuhiro Ohta and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2021,
}

@article{CTT100855459,
  author = {S-L. Tsai and T. Hoshii and H. Wakabayashi and K. Tsutsui and T-K. Chung and E. Chang and K. Kakushima},
  title = {Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering},
  journal = {Applied Physics Letters},
  year = 2021,
}

@article{CTT100855472,
  author = {Junji Kataoka and Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {N-type conduction of sputter-deposited polycrystalline Al0.78Sc0.22N films by Si ion implantation},
  journal = {Applied Physics Express (APEX)},
  year = 2021,
}

@article{CTT100855585,
  author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Haruki Tanigawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2020,
}

@article{CTT100905142,
  author = {Haruki Tanigawa and Kentaro Matsuura and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Enhancement-mode accumulation capacitance–voltage characteristics in TiN/ALD-Al2O3/sputtered-MoS2 top-gated stacks},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100905141,
  author = {Jinhan Song and Y. Lin and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima and Takuya Hoshii},
  title = {Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100822931,
  author = {Kiyoshi Takeuchi and Munetoshi Fukui and Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Shinichi Suzuki and Yohichiroh Numasawa and Naoyuki Shigyo and Kuniyuki Kakushima and Takuya Hoshii and Kazuyoshi Furukawa and Masahiro Watanabe and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Wataru Saito and Shin-ichi Nishizawa and Masanori Tsukuda and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramoto},
  title = {Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs},
  journal = {IEEE Trans. On Semiconductor Manufactureing},
  year = 2020,
}

@article{CTT100828640,
  author = {Jinan Song and Lyu Wei Lin and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Atomic Layer Deposition of Y2O3 Thin Films with a High Growth per Cycle by Ar Multiple Boost Injection},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2020,
}

@article{CTT100905143,
  author = {Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Kuniyuki Kakushima and Takuya Hoshii and Kazuo Tsutsui and Hiroshi Iwai and Shin-ichi Nishizawa and Ichiro Omura and Toshiro Hiramoto},
  title = {Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100828639,
  author = {Haruki Tanigawa and Kentaro Matsuura and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Enhancement-Mode Accumulation Capacitance-Voltage Characteristics in TiN/ALD-Al2O3/Sputtered-MoS2 Top-Gated Stacks},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2020,
}

@article{CTT100822932,
  author = {Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Kuniyuki Kakushima and Takuya Hoshii and Kazuo Tsutsui and Hiroshi Iwai and Shin-ichi Nishizawa and Ichiro Omura and Toshiro Hiramoto},
  title = {Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100821138,
  author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films},
  journal = {Jpn. J. Appl. Phys.},
  year = 2020,
}

@article{CTT100822933,
  author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100813951,
  author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film using UHV RF Magnetron Sputtering and Sulfurization},
  journal = {Journal of the Electron Devices Society (J-EDS)},
  year = 2019,
}

@article{CTT100809862,
  author = {Takuya Hoshii and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI},
  title = {Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates},
  journal = {Japanese Journal of Applied Physics},
  year = 2019,
}

@article{CTT100783282,
  author = {Kalainathan, S. and Ahsan, N. and Hoshii, T. and Okada, Y. and Logu, T. and Sethuraman, K. and Takuya Hoshii},
  title = {Tailoring sub-bandgap of CuGaS<inf>2</inf> thin film via chromium doping by facile chemical spray pyrolysis technique},
  journal = {Journal of Materials Science: Materials in Electronics},
  year = 2018,
}

@article{CTT100786663,
  author = {Kazuo Tsutsui and Tomohiro Matsushita and Kotaro Natori and Takayuki Muro and Yoshitada Morikawa and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
  title = {Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography},
  journal = {Nano Letters},
  year = 2017,
}

@article{CTT100783285,
  author = {Tsutsui, K. and Matsushita, T. and Natori, K. and Muro, T. and Morikawa, Y. and Hoshii, T. and Kakushima, K. and Wakabayashi, H. and Hayashi, K. and Matsui, F. and Kinoshita, T. and Takuya Hoshii},
  title = {Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography},
  journal = {Nano Letters},
  year = 2017,
}

@article{CTT100783097,
  author = {Hoshii Takuya and Naitoh Shunya and Okada Yoshitaka},
  title = {Photoassisted impedance spectroscopy for quantum dot solar cells},
  journal = {Jpn. J. Appl. Phys.},
  year = 2016,
}

@article{CTT100783288,
  author = {Tamayo, R.E.E. and Hoshii, T. and Tamaki, R. and Watanabe, K. and Sugiyama, M. and Okada, Y. and Miyano, K. and Takuya Hoshii},
  title = {Maskless fabrication of broadband antireflection nanostructures on glass surfaces},
  journal = {Journal of Optics (United Kingdom)},
  year = 2016,
}

@article{CTT100905145,
  author = {Hoshii, T. and Naitoh, S. and Okada, Y. and Takuya Hoshii},
  title = {Photoassisted impedance spectroscopy for quantum dot solar cells},
  journal = {Japanese Journal of Applied Physics},
  year = 2016,
}

@article{CTT100700420,
  author = {Efrain Eduardo Tamayo Ruiz and Kentaroh Watanabe and Ryo Tamaki and Takuya Hoshii and Masakazu Sugiyama and Yoshitaka Okada and Kenjiro Miyano and Aleksandra Cvetkovic and Rubﾃｩn Mohedano and Maikel Hernandez},
  title = {Plasma etching antireflection nanostructures on optical elements in concentrator photovoltaic systems},
  journal = {Journal of Photonics for Energy},
  year = 2014,
}

@article{CTT100700419,
  author = {Noriyuki Taoka and Masafumi Yokoyama and Sang Hyeon Kim and Rena Suzuki and Sunghoon Lee and Ryo Iida and Takuya Hoshii and Wipakorn Jevasuwan and Tatsuro Maeda and Tetsuji Yasuda and Osamu Ichikawa and Noboru Fukuhara and Masahiko Hata and Mitsuru Takenaka and Shinichi Takagi},
  title = {Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in InGaAs Metal–Oxide–Semiconductor Field Effect Transistors},
  journal = {IEEE Transactions on Device and Materials Reliability},
  year = 2013,
}

@article{CTT100700417,
  author = {Yosuke Tamura and Toshiyuki Kaizu and Takayuki Kiba and Makoto Igarashi and Rikako Tsukamoto and Akio Higo and Weiguo Hu and Cedric Thomas and Mohd Erman Fauzi and Takuya Hoshii and Ichiro Yamashita and Yoshitaka Okada and Akihiro Murayama and Seiji Samukawa},
  title = {Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching},
  journal = {Nanotechnology},
  year = 2013,
}

@article{CTT100700418,
  author = {Noriyuki Taoka and Masafumi Yokoyama and Sang Hyeon Kim and Rena Suzuki and Sunghoon Lee and Ryo Iida and Takuya Hoshii and Wipakorn Jevasuwan and Tatsuro Maeda and Tetsuji Yasuda and Osamu Ichikawa and Noboru Fukuhara and Masahiko Hata and Mitsuru Takenaka and Shinichi Takagi},
  title = {Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors},
  journal = {Applied Physics Letters},
  year = 2013,
}

@article{CTT100700416,
  author = {Rena Suzuki and Noriyuki Taoka and Masafumi Yokoyama and Sang-Hyeon Kim and Takuya Hoshii and Tatsuro Maeda and Tetsuji Yasuda and Osamu Ichikawa and Noboru Fukuhara and Masahiko Hata and Mitsuru Takenaka and Shinichi Takagi},
  title = {Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties},
  journal = {Journal of Applied Physics},
  year = 2012,
}

@article{CTT100700413,
  author = {Takuya Hoshii and Sunghoon Lee and Rena Suzuki and Noriyuki Taoka and Masafumi Yokoyama and Hishashi Yamada and Masahiko Hata and Tetsuji Yasuda and Mitsuru Takenaka and Shinichi Takagi},
  title = {Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation},
  journal = {Journal of Applied Physics},
  year = 2012,
}

@article{CTT100700414,
  author = {Wipakorn Jevasuwan and Yuji Urabe and Tatsuro Maeda and Noriyuki Miyata and Tetsuji Yasuda and Akihiro Ohtake and Hisashi Yamada and Masahiko Hata and Sunghoon Lee and Takuya Hoshii and Mitsuru Takenaka and Shinichi Takagi},
  title = {Controlling Anion Composition at Metal-Insulator-Semiconductor Interfaces on III-V Channels by Plasma Processing},
  journal = {Japanese Journal of Applied Physics},
  year = 2012,
}

@article{CTT100700415,
  author = {R. Suzuki and N. Taoka and M. Yokoyama and S. Lee and S. H. Kim and T. Hoshii and T. Yasuda and W. Jevasuwan and T. Maeda and O. Ichikawa and N. Fukuhara and M. Hata and M. Takenaka and S. Takagi},
  title = {1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density},
  journal = {Applied Physics Letters},
  year = 2012,
}

@article{CTT100700412,
  author = {Noriyuki Taoka and Masafumi Yokoyama and Sang Hyeon Kim and Rena Suzuki and Takuya Hoshii and Ryo Iida and Sunghoon Lee and Yuji Urabe and Noriyuki Miyata and Tetsuji Yasuda and Hisashi Yamada and Noboru Fukuhara and Masahiko Hata and Mitsuru Takenaka and Shinichi Takagi},
  title = {AC response analysis of C-V curves and quantitative analysis of conductance curves in Al2O3/InP interfaces},
  journal = {Microelectronic Engineering},
  year = 2011,
}

@article{CTT100700411,
  author = {Shinichi Takagi and Rui Zhang and Takuya Hoshii and Noriyuki Taoka and Mitsuru Takenaka and S Kar and S VanElshocht and K Kita and M Houssa and D Misra},
  title = {MOS Interface Control Technologies for III-V/Ge Channel MOSFETs},
  journal = {ECS transactions},
  year = 2011,
}

@article{CTT100700410,
  author = {Yoshiyuki Kondo and Momoko Deura and Yuki Terada and Takuya Hoshii and Mitsuru Takenaka and Shinichi Takagi and Yoshiaki Nakano and Masakazu Sugiyama},
  title = {Initial growth of InAs on P-terminated Si(111) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si},
  journal = {Journal of Crystal Growth},
  year = 2010,
}

@article{CTT100700408,
  author = {T. Haimoto and T. Hoshii and S. Nakagawa and M. Takenaka and S. Takagi},
  title = {Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces},
  journal = {Applied Physics Letters},
  year = 2010,
}

@article{CTT100700409,
  author = {T. Hoshii and M. Yokoyama and H. Yamada and M. Hata and T. Yasuda and M. Takenaka and S. Takagi},
  title = {Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO[sub 2]},
  journal = {Applied Physics Letters},
  year = 2010,
}

@article{CTT100700407,
  author = {Momoko Deura and Takuya Hoshii and Takahisa Yamamoto and Yuichi Ikuhara and Mitsuru Takenaka and Shinichi Takagi and Yoshiaki Nakano and Masakazu Sugiyama},
  title = {Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy},
  journal = {Applied Physics Express},
  year = 2009,
}

@article{CTT100700405,
  author = {Momoko Deura and Takuya Hoshii and Mitsuru Takenaka and Shinichi Takagi and Yoshiaki Nakano and Masakazu Sugiyama},
  title = {Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si},
  journal = {Journal of Crystal Growth},
  year = 2008,
}

@article{CTT100783099,
  author = {Takuya Hoshii and Momoko Deura and Masakazu Sugiyama and Ryosho Nakane and Satoshi Sugahara and Mitsuru Takenaka and Yoshiaki Nakano and Shinichi Takagi},
  title = {Epitaxial lateral overgrowth of InGaAs on SiO 2 from (111) Si micro channel areas},
  journal = {physica status solidi (c)},
  year = 2008,
}

@article{CTT100700404,
  author = {Takuya Hoshii and Satoshi Sugahara and Shin-ichi Takagi},
  title = {Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2007,
}

@inproceedings{CTT100902988,
  author = {Ryosuke Kajikawa and Takamasa Kawanago and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Aligned WOx S/D Contacts to Gate Stacks with TiOx Nucleation Layer by Multiple-Deposition Method in WSe2 pFETs},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100903418,
  author = {梶川 亮介 and 川那子 高暢 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {トップゲートに自己整合したWOx S/Dを用いた30-50 nm膜厚WSe2バックチャネルpFET},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100905149,
  author = {Shonosuke Kimura and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Performance Improvements of P-channel GaN HFETs by Atomic Layer Etching using Nitrogen Plasma},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896549,
  author = {川那子 高暢 and 梶川 亮介 and 水谷 一翔 and Tsai Sung Lin and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100896546,
  author = {水谷 一翔 and 星井 拓也 and 川那子 高暢 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100875814,
  author = {阿野 響太郎 and 星井 拓也 and 若林 整 and 筒井 一生 and 依田 孝 and 角嶋 邦之},
  title = {ゲート付きSiC pnダイオードの電気特性評価},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100877155,
  author = {R. Shibukawa and S. -L. Tsai and T. Hoshii and H. Wakbayashi and K. Tsutsui and K. Kakushima},
  title = {Thermal stability of ferroelectric AlScN films},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877153,
  author = {Mitsuki Nishizawa and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
  title = {Introduction of surface field-plate for accurate minority carrier lifetime estimation of 4H-SiC epitaxial layer},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877154,
  author = {Kazuto Mizutani and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Recovery of ferroelectric property after endurance test by positive reset voltage application for CeOx-capped ferroelectric HfO2 films},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877152,
  author = {Si-Meng Chen and Sung-Lin Tsai and Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877156,
  author = {Sho Sasaki and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Observation of ferroelectricity in atomic layer deposited AlN film},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100902941,
  author = {Takamasa Kawanago and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd  Down to 0.5 V Consisting of WSe2  n/p FETs},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875832,
  author = {小森 勇太 and 木村 安希 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/AlN/GaN構造におけるキャリア散乱要因のAlN層厚依存性},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875829,
  author = {小森 勇太 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/AlN/GaN構造中2DEGにおける移動度のキャリア濃度依存性},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100861332,
  author = {Masahiro Watanabe and Naoyuki Shigyo and Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Katsumi Satoh and Tomoko Matsudai and Takuya Saraya and Iriya Muneta and Hitoshi Wakabayashi and Akira Nakajima and Shin-ichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices},
  booktitle = {Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)},
  year = 2021,
}

@inproceedings{CTT100848916,
  author = {竹内走一郎 and 古賀峻丞 and 田中晶貴 and 孫澤旭 and 橋本由介 and 星井拓也 and 筒井一生 and 松下智裕},
  title = {AsおよびBを共ドープしたSi結晶中に存在するドーパントの構造解析},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100848915,
  author = {筒井一生 and 濱田拓也 and 高山 研 and 金 相佑 and 星井拓也 and 角嶋邦之 and 若林 整 and 高橋言緒 and 井手利英 and 清水三聡},
  title = {選択成長法を用いたGaN 系FinFET},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100855930,
  author = {Takuya Saraya and Kazuo Ito and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Masanori Tsukuda and Katsumi Satoh and Tomoko Matsudai and Kuniyuki Kakushima and Takuya Hoshii and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Wataru Saito and Shin-ichi Nishizawa and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramoto},
  title = {3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855928,
  author = {"Atsuhiro Ohta and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima"},
  title = {Electrical Characteristics of Atomic Layer Deposited Y-silicate Dielectrics},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855929,
  author = {H. Nishida and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {A simulation study on the transient leakage current analysis of a GaN epitaxial layer},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855927,
  author = {A. Miyata and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Photocurrent measurements of AlGaN/GaN HEMT under X-ray irradiation},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855926,
  author = {"Kazuto Mizutani and Yu-Wei Lin and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima"},
  title = {Observation of wake-up effect on ferroelectric Y:HfO2 thickness scaling},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855925,
  author = {Y.-W. Lin and K. Mizutani and T. Hoshii and H. Wakabayashi and K. Tsutsui and Y.-F. Tsao and T.-J. Huang and H.-T. Hsu and K. Kakushima},
  title = {Ferroelectric HfO2 Capacitors for Varctor Application in GHz},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855924,
  author = {S. Tsai and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Highly Oriented Growth of AlxSc1-xN Ferroelectric Film on W Bottom Electrodes},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848913,
  author = {木村 安希 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/(AlN)/GaN構造におけるキャリア移動度の温度依存性},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848911,
  author = {筒井 一生 and 松橋 泰平 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 永山 勉 and 樋口 隆弘 and 加藤 慎一 and 谷村 英昭 and 室 隆桂之 and 松下 智裕 and 森川 良忠},
  title = {AsおよびBの共ドープによるSi中Asクラスターの特性制御},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855934,
  author = {Sunglin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Thickness Scaling on Ferroelectric Al0.8Sc0.2N Films},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848904,
  author = {久恒 悠介 and 金 相佑 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {横型GaN FinFETの構造最適化についての検討},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848908,
  author = {高山 研 and 太田 貴士 and 佐々木 満孝 and 向井 勇人 and 濱田 拓也 and 高橋 言雄 and 井出 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100852995,
  author = {Kazuto Mizutani and Yu Wei Lin and Takuya Hoshii and Hiroshi Funakubo and Hitoshi Wakabayashi and Kazuto Tsutsui and Kuniyuki Kakushima},
  title = {Formation of Ferroelectric Y-doped HfO2 though Atomic Layer Deposition and Low Temperature Post Annealing},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100852900,
  author = {J. Molina and T. Mimura and Y. Nakamura and T. Shimizu and H. Funakubo and I. Fujiwara and T. Hoshii and S. Ohmi and A. Hori and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100829203,
  author = {松橋 泰平 and 星井 拓也 and 沖田 寛昌 and 中島 昭 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {分極接合基板における2DEG枯渇電圧の解析的導出},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100829204,
  author = {木村 安希 and 星井 拓也 and 宮野 清孝 and 布上 真也 and 名古 肇 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/GaNヘテロ構造におけるキャリア輸送特性のAlNスペーサ層膜厚依存性},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100813991,
  author = {K. Tsutsui and K. Natori and T. Ogawa and T. Muro and T. Matsuishita and Y. Morikawa and T. Hoshii and K. Kakushima and H. Wakabayashi and K. Hayashi and F. Matsui and T. Kinoshita},
  title = {Analyses of 3D Atomic Arrangements of Dopants in Si Crystal Using Spectro-photoelectron Holography},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813985,
  author = {T. Kinoshita and T. Matsushita and T. Muro and T. Ohkochi and H. Osawa and K. Hayashi and F. Matsui and K.Tsutsui and K. Natori and Y. Morikawa and T. Hoshii and K. Kakushima and H. Wakabayashi and A. Takeda and K. Terashima and W. Hosoda and T. Fukura and Y. Yano and H. Fujiwara and M. Sunagawa and H. Kato and T. Oguchi and T. Wakita and Y. Muraoka and T. Yokoya},
  title = {Status of Photoelectron Holography at SPring-8: Experimental Setup for Time- and Space-Resolved Technique and Application to Individual Atomic Imaging of Multiple Dopant Sites},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100833081,
  author = {渡辺正裕 and 執行直之 and 星井拓也 and 古川和由 and 角嶋邦之 and 佐藤克己 and 末代知子 and 更屋拓哉 and 高倉俊彦 and 伊藤一夫 and 福井宗利 and 鈴木慎一 and 竹内 潔 and 宗田伊里也 and 若林 整 and 中島 昭 and 西澤伸一 and 筒井一生 and 平本俊郎 and 大橋弘通 and 岩井洋},
  title = {トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション},
  booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2019,
}

@inproceedings{CTT100813986,
  author = {H. Tanigawa and K. Matsuura and I. Muneta and T. Hoshii and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Positive Threshold Voltage in Accumulation Capacitance of TiN-Top-Gate/High-k/Sputtered-MoS2 Stacks},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813987,
  author = {Jinhan Song and A. Ohta and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Electrical Characteristics of Atomic Layer Deposited Y-silicate Devices},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813988,
  author = {Y. W. Lin and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Pulse deposition of Y2O3 films by Y(iPrCp)3 assisted by Ar boost technology},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813989,
  author = {Takuya Hoshii and Hiromasa Okita and Taihei Matsuhashi and Indraneel Sanyal and Yu-Chih Chen and Ying-Hao Ju and Akira Nakajima and Kuniyuki Kakushima and Hitoshi Wakabayashi and Jen-Inn Chyi and Kazuo Tsutsui},
  title = {Evaluation of Interfacial Charges at GaN/AlGaN Interfaces Grown by MOVPE},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813990,
  author = {Kazuo Tsutsui and Tomohiro Matsushita and Takayuki Muro and Yoshitada Morikawa and Kotaro Natori and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
  title = {3D Atomic Imaging of As Doped in Si by Spectro-Photoelectron Holography},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813981,
  author = {T. Hiramoto and T. Saraya and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and M. Tsukuda and Y. Numasawa and K. Satoh and T. Matsudai and W. Saito and K. Kakushima and T. Hoshii and K. Furukawa and M. Watanabe and N. Shigyo and H. Wakabayashi and K. Tsutsui and H. Iwai and A. Ogura and S. Nishizawa and I. Omura and H. Ohash},
  title = {Switching of 3300V Scaled IGBT by 5V Gate Drive},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829201,
  author = {濱田 拓也 and 堀口 大河 and 辰巳 哲也 and 冨谷 茂隆 and 濱田 昌也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜のCl2プラズマ処理によるシート抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829200,
  author = {井上 毅哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の研究},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829183,
  author = {高山 研 and 向井 勇人 and 濱田 拓也 and 高橋 言緒 and 井手 利英 and 清水 三総 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {GaN Fin構造選択成長における低抵抗領域の発生原因の検討},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813980,
  author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813983,
  author = {T. Saraya and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and K. Kakushima and T. Hoshii and K. Tsutsui and H. Iwai and S. Nshizawa and I. Omura and T. Hiramoto},
  title = {Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829184,
  author = {向井 勇人 and 髙山 研 and 濱田 拓也 and 高橋 言緒 and 井手 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {選択成長法を用いたGaN FinFETの作製},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829202,
  author = {沖田 寛昌 and 星井 拓也 and 松橋 泰平 and Sanyal Indraneel and Chen Yu-Chih and Ju Ying-Hao and 中島 昭 and 西澤 伸一 and 大橋 弘通 and 角嶋 邦之 and 若林 整 and Chyi Jen-Inn and 筒井 一生},
  title = {TEGを用いたAlGaN/GaNヘテロ成長の2DEG側界面電荷への影響},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829172,
  author = {西田 宗史 and 星井 拓也 and 片岡 寛明 and 筒井 一生 and 角嶋 邦之 and 若林 整},
  title = {ステップ電圧印加時の過渡電流測定によるGaN中のトラップ密度評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829171,
  author = {太田 惇丈 and 宋 禛漢 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {原子層堆積法を用いたイットリウムシリケート薄膜の形成},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829170,
  author = {草深 一樹 and Sunglin Tsai and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {スパッタリングによって形成したAlScN膜のリーク電流の評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829168,
  author = {宋 ジンハン and 太田 惇丈 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {Y2O3/SiO2積層構造の絶縁膜を用いたMOS capacitorの特性評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829174,
  author = {神林 郁哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {Si(111)基板上GaNのためのMgF2バッファの検討},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829175,
  author = {蔡 松霖 and 草深 一樹 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {スパッタリングを用いたAlScN膜の形成},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829173,
  author = {宮田 篤希 and 齋藤 大樹 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {4H-SiCエピタキシャル層によるX線検出に関する検討},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829182,
  author = {松橋 泰平 and 星井 拓也 and 沖田 寛昌 and Indraneel Sanyal and Yu-Chih Chen and Ying-Hao Ju and 中島 昭 and 角嶋 邦之 and 若林 整 and Jen-Inn Chyi and 筒井 一生},
  title = {TEGを用いたGaN/AlGaNヘテロ成長の2DHG側界面電荷への影響},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829179,
  author = {谷川 晴紀 and 松浦 賢太朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {正の閾値電圧のMetal-Top-Gate/High-k/スパッタMoS2の蓄積容量特性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829178,
  author = {木村 安希 and 久永 真之佑 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {部分的に薄層化したAlGaN 層によるAlGaN/GaN コンタクト抵抗低減効果の薄層領域パターン依存性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829177,
  author = {堀口 大河 and 濱田 拓也 and 辰巳 哲也 and 冨谷 茂隆 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜のSF6プラズマ処理によるシート抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829176,
  author = {濱田 昌也 and 松浦 賢太朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタ法と硫黄雰囲気アニールで成膜した高いホール効果移動度を持つ層状ZrS2膜},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100811304,
  author = {平本 俊郎 and 更屋 拓哉 and 伊藤 一夫 and 高倉 俊彦 and 福井 宗利 and 鈴木 慎一 and 竹内 潔 and 附田 正則 and 沼沢 陽一郎 and 佐藤 克己 and 末代 知子 and 齋藤 渉 and 角嶋 邦之 and 星井 拓也 and 古川 和由 and 渡辺 正裕 and 執行 直之 and 若林 整 and 筒井 一生 and 岩井 洋 and 小椋 厚志 and 西澤 伸一 and 大村 一郎 and 大橋 弘通},
  title = {依頼講演 5Vゲート駆動による3300VスケーリングIGBTのスイッチング動作 (情報センシング)},
  booktitle = {映像情報メディア学会技術報告 = ITE technical report},
  year = 2019,
}

@inproceedings{CTT100811298,
  author = {更屋 拓哉 and 伊藤 一夫 and 高倉 俊彦 and 福井 宗利 and 鈴木 慎一 and 竹内 潔 and 附田 正則 and 沼沢 陽一郎 and 佐藤 克己 and 末代 知子 and 齋藤 渉 and 角嶋邦之 and 星井 拓也 and 古川 和由 and 渡辺正裕 and 執行 直之 and 筒井一生 and 岩井洋 and 小椋 厚志 and 西澤 伸一 and 大村 一郎 and 大橋 弘通 and 平本 俊郎},
  title = {5Vゲート駆動1200V級スケーリングIGBTの動作実証とスイッチング損失の低減 (シリコン材料・デバイス)},
  booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2019,
}

@inproceedings{CTT100809864,
  author = {平本 俊郎 and 更屋 拓哉 and 伊藤 一夫 and 高倉 俊彦 and 福井 宗利 and 鈴木 慎一 and 竹内 潔 and 附田 正則 and 沼沢 陽一郎 and 佐藤 克己 and 末代 知子 and 齋藤 渉 and 角嶋 邦之 and 星井 拓也 and 古川 和由 and 渡辺 正裕 and 執行 直之 and 若林 整 and 筒井 一生 and 岩井 洋 and 小椋 厚志 and 西澤 伸一 and 大村 一郎 and 大橋 弘通},
  title = {5Vゲート駆動による3300VスケーリングIGBTのスイッチング動作 (シリコン材料・デバイス)},
  booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2019,
}

@inproceedings{CTT100813979,
  author = {Takuya Hoshii and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Quantitative evaluation of interfacial charges at GaN/AlGaN interfaces},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100811305,
  author = {平本 俊郎 and 更屋 拓哉 and 伊藤 一夫 and 高倉 俊彦 and 福井 宗利 and 鈴木 慎一 and 竹内 潔 and 附田 正則 and 沼沢 陽一郎 and 佐藤 克己 and 末代 知子 and 齋藤 渉 and 角嶋 邦之 and 星井 拓也 and 古川 和由 and 渡辺 正裕 and 執行 直之 and 若林 整 and 筒井 一生 and 岩井 洋 and 小椋 厚志 and 西澤 伸一 and 大村 一郎 and 大橋 弘通},
  title = {依頼講演 5Vゲート駆動による3300VスケーリングIGBTのスイッチング動作 (集積回路)},
  booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2019,
}

@inproceedings{CTT100822935,
  author = {星井 拓也 and 中島 昭 and 西澤 伸一 and 大橋 弘通 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {分極接合基板におけるAlGaN/GaNヘテロ界面の欠陥電荷評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100809866,
  author = {筒井一生 and 松下 智裕 and 名取 鼓太郞 and 小川 達博 and 室 隆桂之 and 森川 良忠 and 星井 拓也 and 角嶋邦之 and 若林整 and 林 好一 and 松井 文彦 and 木下 豊彦},
  title = {光電子ホログラフィー法によるシリコン中に高濃度ドープされた活性および不活性な不純物原子の三次元原子配列構造の観測},
  booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2019,
}

@inproceedings{CTT100813975,
  author = {K. Hisatsune and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Thickness Effects on Charge and Discharge Characteristics of CeOx MIM Capacitors},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813972,
  author = {Masahiro Watanabe and Naoyuki Shigyo and Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Katsumi Satoh and Tomoko Matsudai and Takuya Saraya and Toshihiro Takakura and Kazuo Itou and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Iriya Muneta and Hitoshi Wakabayashi and Akira Nakajima and Shin-ichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813973,
  author = {Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Masanori Tsukuda and Yohichiroh Numasawa and Katsumi Satoh and Tomoko Matsudai and Wataru Saito and Kuniyuki Kakushima and Takuya Hoshii and Kazuyoshi Furukawa and Masahiro Watanabe and Naoyuki Shigyo and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Shin-Ichi Nishizawa and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramo},
  title = {3300V Scaled IGBTs Driven by 5V Gate Voltag},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813974,
  author = {J. Molina and H. Iwatsuka and T. Hoshii and S. Ohmi and H. Funakubo and A. Hori and I. Fujiwara and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813976,
  author = {K. Sasaki and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
  title = {Minority Carrier Lifetime Extraction Methodology of SiC Epitaxial Layer},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813984,
  author = {M. Fukui and T. Saraya and K. Itou and T. Takakura and S. Suzuki and K. Takeuchi and K. Kakushima and T. Hoshii and K. Tsutsui and H. Iwai and S. Nishizawa and I. Omura and T. Hiramoto},
  title = {Turn-Off Loss Improvement by IGBT Scaling},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816747,
  author = {筒井 一生 and 松下 智裕 and 名取 鼓太郞 and 室 隆桂之 and 森川 良忠 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 林 好一 and 松井 文彦 and 木下 豊彦},
  title = {光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816748,
  author = {濱田 拓也 and 向井 勇人 and 高橋 言緒 and 井手 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {FinFET応用に向けた選択成長GaNチャネルの電気特性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816750,
  author = {筒井 一生 and 松下 智裕 and 名取 鼓太郞 and 小川 達博 and 室 隆桂之 and 森川 良忠 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 林 好一 and 松井 文彦 and 木下 豊彦},
  title = {光電子ホログラフィーによる半導体中の不純物の3Ｄ原子イメージング},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813971,
  author = {Takeya Inoue and Takuya Hoshii and Takuo Kikuchi and Hidehiko Yabuhara and Kazuyuki Ito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Junichi Tonotani and Kazuo Tsutsui},
  title = {Fundamental study on reducing on-resistance by introducing strain  into silicon vertical power devices},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813970,
  author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816745,
  author = {筒井一生 and 松下智裕 and 室隆桂之 and 森川良忠 and 名取鼓太郎 and 小川達博 and 星井拓也 and 角嶋邦之 and 若林整 and 林好一 and 松井文彦 and 木下豊彦},
  title = {光電子ホログラフィー法によるシリコン中にドープされた不純物の三次元原子配列構造の解析},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813969,
  author = {T. Saraya and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and M. Tsukuda and Y. Numasawa and K. Satoh and T. Matsudai and W. Saito and K. Kakushima and T. Hoshii and K. Furukawa and M. Watanabe and N. Shigyo and K. Tsutsui and H. Iwai and A. Ogura and S. Nishizawa and I. Omura and H. Ohashi and T. Hiramoto},
  title = {Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786672,
  author = {Takuya Hoshii and Shuma Tsuruta and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Performance Prediction of Scaled p-channel GaN MOSFET on Polarization Junction Platform},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100880842,
  author = {K. Sasaki and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
  title = {Minority Carrier Lifetime Measurement for SiC Epitaxial Layer},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786671,
  author = {Takuya Hamada and Hayato Mukai and Tokio Takahashi and Toshihide Ide and Mitsuaki Shimizu and Hiroki Kuroiwa and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Kazuo Tsutsui},
  title = {Electrical properties of selectively grown GaN channel for FinFETs},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813966,
  author = {Toyohiko Kinoshita and Tomohiro Matsushita and Takayuki Muro and Takuo Ohkochi and Hitoshi Osawa and Kouichi Hayashi and Fumihiko Matsui and Kazuo Tsutsui and Kotaro Natori and Yoshitada Morikawa and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Aya Taked and Kensei Terashim and Wataru Hosoda and Tetsuji Fukura and Yuukou Yano and Hirohkazu Fujiwara and Masanori Sunagawa and Hiromitsu Kato and Tamio Oguchi and Takanori Wakita and Yuuji Muraoka and Takayoshi Yokoya},
  title = {Status of photoelectron holography at SPring-8:Experimental setup for time- and space-resolved technique and application to individual atomic imaging of multiple dopant sites},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100795212,
  author = {M. Hamada and K. Matsuura and T. Sakamoto and H. Tanigawa and T. Ohashi and I. Muneta and T. Hoshii and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813968,
  author = {Kazuya Hisatsune and Yoshihisa Takaku and Kohei Sasa and Takuya Hoshii and Iriya Muneta and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Charge and Discharge Characteristics of On-chip CeOx Electric Double Layer Decoupling Capacitors},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813965,
  author = {Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Masahiro Watanabe and Naoyuki Shigyo and Takuya Saraya and Toshihiko Takakura and Kazuo Itou and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Iriya Muneta and Hitoshi Wakabayashi and Sinichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786670,
  author = {Kazuo Tsutsui and Tomohiro Matsushita and Takayuki Muro and Yoshitada Morikawa and Kotaro Natori and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
  title = {Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816732,
  author = {久恒 和也 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {CeOxを挿入したMIMキャパシタの静電容量の過渡応答特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816743,
  author = {小川 達博 and 名取 鼓太郎 and 星井 拓也 and 仲武 昌史 and 渡辺 義夫 and 永山 勉 and 樋口 隆弘 and 加藤 慎一 and 谷村 英昭 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {フラッシュランプアニールおよびポストアニールで活性/不活性化したSi中Asの軟X線光電子分光による評価},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816742,
  author = {谷川 晴紀 and 松浦 賢太朗 and 濱田 昌也 and 坂本 拓朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816741,
  author = {向井 勇人 and 濱田 拓也 and 高橋 言緒 and 井出 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816739,
  author = {佐々木 杏民 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {n型SiCのエピタキシャル層の正孔ライフタイムがpnダイオード特性に与える影響},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816738,
  author = {佐々 康平 and 久恒 和也 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {酸化セリウムを挿入したMIMキャパシタの充放電特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816737,
  author = {岩塚 春樹 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {Siを導入したHfO2のMIMキャパシタの容量特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816736,
  author = {久永 真之佑 and 渡部 拓巳 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {凹凸AlGaN層導入によるAlGaN/GaN HEMT構造のコンタクト抵抗低減手法におけるドットアレイ状平面パターンのサイズ効果},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816735,
  author = {鶴田 脩真 and 星井 拓也 and 中島 昭 and 西澤 伸一 and 大橋 弘通 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {AlGaN/GaN 界面準位が分極接合基板上 p-MOSFET の電流特性に与える影響},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816734,
  author = {清水 孝 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {TMAHによる表面処理のp型GaN/金属コンタクト特性への影響},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816733,
  author = {井上 毅哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の基礎的検討},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816731,
  author = {神林 郁哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {Si(111)基板上に成長したInAs極薄膜のラマン分光法による歪み評価},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816730,
  author = {濱田拓也 and 向井勇人 and 高橋言緒 and 井手利英 and 清水三聡 and 星井拓也 and 角嶋邦之 and 若林整 and 岩井洋 and 筒井一生},
  title = {FinFET応用に向けた選択成長GaNチャネルの電気特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813959,
  author = {K. Kakushima and T. Hoshii and M. Watanabe and N. Shigyo and K. Furukawa and T. Saraya and T. Takakura and K. Itou and M. Fukui and S. Suzuki and K. Takeuchi and I. Muneta and H. Wakabayashi and Y. Numasawa and A. Ogura and S. Nishizawa and K. Tsutsui and T. Hiramoto and H. Ohashi and H. Iwai},
  title = {New methodology for evaluating minority carrier lifetime for process assessment},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813958,
  author = {D. Saito and I. Muneta and T. Hoshii and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
  title = {Reliability of SiC Schottky Diodes with Mo2C Electrode},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813957,
  author = {C. Y. Su and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
  title = {Interface State Density of Atomic Layer Deposited Al2O3 on Beta-Ga2O3},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813956,
  author = {H. Kataoka and H. Iwai and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
  title = {A Defect Density Profile Extraction Method for GaN Epi-Wafers},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904002,
  author = {Chen-Yi Su and Takuya Hoshii and Iriya Muneta and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Kuniyuki Kakushima},
  title = {Initial trap and hysteresis analysis of Atomic Layer Deposited Al2O3 on b-Ga2O3},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100786669,
  author = {Kazuo Tsutsui and Tomohiro Matsushita and Takayuki Muro and Yoshitada Morikawa and Kotaro Natori and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
  title = {Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100830068,
  author = {Suguru Tatsunokuchi and I. Muneta and T. Hoshii and H. Wakabayashi and K. Tsutsui and HIROSHI IWAI and K. Kakushima},
  title = {Photovoltaic Properties of Lateral Ultra-Thin Si p-i-n structure},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100783280,
  author = {Su, C.Y. and Hoshii, T. and Muneta, I. and Wakabayashi, H. and Tsutsui, K. and Iwai, H. and Kakushima, K. and Takuya Hoshii},
  title = {Interface state density of atomic layer deposited AI2O3 on J3-Gai03},
  booktitle = {ECS Transactions},
  year = 2018,
}

@inproceedings{CTT100905144,
  author = {Su, C.Y. and Hoshii, T. and Muneta, I. and Wakabayashi, H. and Tsutsui, K. and Iwai, H. and Kakushima, K. and Takuya Hoshii},
  title = {Interface state density of atomic layer deposited AI2O3 on J3-Gai03},
  booktitle = {ECS Transactions},
  year = 2018,
}

@inproceedings{CTT100783277,
  author = {Yamashita, D. and Watanabe, K. and Fujino, M. and Hoshii, T. and Okada, Y. and Nakano, Y. and Suga, T. and Sugiyama, M. and Takuya Hoshii},
  title = {Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs},
  booktitle = {2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017},
  year = 2018,
}

@inproceedings{CTT100783278,
  author = {Tsutsui, K. and Matsushita, T. and Muro, T. and Morikawa, Y. and Natori, K. and Hoshii, T. and Kakushima, K. and Wakabayashi, H. and Hayashi, K. and Matsui, F. and Kinoshita, T. and Takuya Hoshii},
  title = {Analyses of 3D atomic arrangements of impurity atoms doped in silicon by spectro-photoelectron holography technique},
  booktitle = {2018 18th International Workshop on Junction Technology, IWJT 2018},
  year = 2018,
}

@inproceedings{CTT100783281,
  author = {Tatsunokuchi, S. and Muneta, I. and Hoshii, T. and Wakabayashi, H. and Tsutsui, K. and Iwai, H. and Kakushima, K. and Takuya Hoshii},
  title = {Photovoltaic properties of lateral ultra-thin Si p-i-n structure},
  booktitle = {China Semiconductor Technology International Conference 2018, CSTIC 2018},
  year = 2018,
}

@inproceedings{CTT100783279,
  author = {Kaneko, T. and Muneta, I. and Hoshii, T. and Wakabayashi, H. and Tsutsui, K. and Iwai, H. and Kakushima, K. and Takuya Hoshii},
  title = {Characterization of β-Ga<inf>2</inf>O<inf>3</inf> Schottky barrier diodes},
  booktitle = {2018 18th International Workshop on Junction Technology, IWJT 2018},
  year = 2018,
}

@inproceedings{CTT100786668,
  author = {Kotaro Natori and Tatsuhiro Ogawa and Takuya Hoshii and Tomohiro Matsushia and Takayuki Muro and Toyohiko Kinoshita and Yoshitada Morikawa and Kuniyuki Kakushima and Fumihiko Matsui and Kouichi Hayashi and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100830067,
  author = {Suguru Tatsunokuchi and Iriya Muneta and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Kuniyuki Kakushima},
  title = {Photovoltaic Properties of Lateral Si Nano Wall Solar Cells},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100809869,
  author = {筒井一生 and 角嶋邦之 and 星井 拓也 and 中島 昭 and 西澤 伸一 and 若林整 and 宗田伊理也 and 佐藤 克己 and 末代 知子 and 齋藤 渉 and 更屋 拓哉 and 伊藤 一夫 and 福井 宗利 and 鈴木 慎一 and 小林 正治 and 高倉 俊彦 and 平本 俊郎 and 小椋 厚志 and 沼沢 陽一郎 and 大村 一郎 and 大橋 弘通 and 岩井洋},
  title = {三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証 (電子デバイス 半導体電力変換合同研究会 パワーデバイス・パワーエレクトロニクスとその実装技術)},
  booktitle = {電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan},
  year = 2017,
}

@inproceedings{CTT100811306,
  author = {K. Tsutsui and K. Kakushima and T. Hoshii and A. Nakajima and S. Nishizawa and H. Wakabayashi and I. Muneta and K. Sato and T. Matsudai and W. Saito and T. Saraya and K. Itou and M. Fukui and S. Suzuki and M. Kobayashi and T. Takakura and T. Hiramoto and A. Ogura and Y. Numasawa and I. Omura and H. Ohashi and H. Iwai},
  title = {3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low Vce(sat)},
  booktitle = {Proceedings of International Conference on ASIC},
  year = 2017,
}

@inproceedings{CTT100809875,
  author = {筒井 一生 and 角嶋 邦之 and 星井 拓也 and 中島 昭 and 西澤 伸一 and 若林 整 and 宗田 伊理也 and 佐藤 克己 and 末代 知子 and 齋藤 渉 and 更屋 拓哉 and 伊藤 一夫 and 福井 宗利 and 鈴木 慎一 and 小林 正治 and 高倉 俊彦 and 平本 俊郎 and 小椋 厚志 and 沼沢 陽一郎 and 大村 一郎 and 大橋 弘通 and 岩井 洋},
  title = {三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証},
  booktitle = {電気学会研究会資料. SPC = The papers of technical meeting on semiconductor power converter, IEE Japan},
  year = 2017,
}

@inproceedings{CTT100786678,
  author = {Takuya Hoshii and Rumi Takayama and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100830070,
  author = {K. Kakushima and Yuta Ikeuchi and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and T. Kikuchi and S. Ishikawa},
  title = {Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100830069,
  author = {K. Kakushima and T. Suzuki and T. Hoshii and I. Muneta and H. Wakabayashi and HIROSHI IWAI and Y. Aoki,H. Nohira Aoki and KAZUO TSUTSUI},
  title = {Formation of Mo2C Electrodes using Stacked Sputtering Process for Thermally Stable SiC Schottky Barrier Diodes},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100811303,
  author = {高山 留美 and 星井 拓也 and 中島 昭 and 西澤 伸一 and 大橋 弘通 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {分極接合基板上pチャネルGaN MOS構造の容量特性についての検討 (シリコン材料・デバイス)},
  booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2017,
}

@inproceedings{CTT100903976,
  author = {龍口 傑 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 岩井 洋 and 角嶋 邦之},
  title = {横型Siナノウォール太陽電池の発電特性に関する検討},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100783283,
  author = {Kakushima, K. and Hoshii, T. and Tsutsui, K. and Nakajima, A. and Nishizawa, S. and Wakabayashi, H. and Muneta, I. and Sato, K. and Matsudai, T. and Saito, W. and Saraya, T. and Itou, K. and Fukui, M. and Suzuki, S. and Kobayashi, M. and Takakura, T. and Hiramoto, T. and Ogura, A. and Numasawa, Y. and Omura, I. and Ohashi, H. and Iwai, H. and Takuya Hoshii},
  title = {Experimental verification of a 3D scaling principle for low V<inf>ce(sat)</inf>IGBT},
  booktitle = {Technical Digest - International Electron Devices Meeting, IEDM},
  year = 2017,
}

@inproceedings{CTT100783284,
  author = {Kakushima, K. and Suzuki, T. and Hoshii, T. and Iriya Muneta and Wakabayashi, H. and Tsutsui, K. and Iwai, H. and Nohira, H. and Takuya Hoshii},
  title = {Formation of Mo<inf>2</inf>C electrodes using stacked sputtering process for thermally stable SiC Schottky barrier diodes},
  booktitle = {17th International Workshop on Junction Technology, IWJT 2017},
  year = 2017,
}

@inproceedings{CTT100783286,
  author = {Kakushima, K. and Ikeuchi, Y. and Hoshii, T. and Iriya Muneta and Wakabayashi, H. and Tsutsui, K. and Iwai, H. and Kikuchi, T. and Ishikawa, S. and Takuya Hoshii},
  title = {Low temperature ohmic contact for p-type GaN using Mg electrodes},
  booktitle = {17th International Workshop on Junction Technology, IWJT 2017},
  year = 2017,
}

@inproceedings{CTT100786667,
  author = {K. Kakushima and T. Hoshii and K. Tsutsui and A. Nakajima and S. Nishizawa and H. Wakabayashi and I. Muneta and K. Sato and T. Matsudai and W. Saito and T. Saraya and K. Itou and M. Fukui and S. Suzuki and M. Kobayashi and T. Takakura and T. Hiramoto and A. Ogura and Y. Numasawa and I. Omura and H. Ohashi and H. Iwai},
  title = {Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100830071,
  author = {Y. Ikeuchi and T. Hoshii and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima and S.Ishikawa},
  title = {Characteristics of Fe/pGaN Contact upon Annealing Process},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100783287,
  author = {Yamashita, D. and Watanabe, K. and Fujino, M. and Hoshii, T. and Okada, Y. and Nakano, Y. and Suga, T. and Sugiyama, M. and Takuya Hoshii},
  title = {Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs},
  booktitle = {Conference Record of the IEEE Photovoltaic Specialists Conference},
  year = 2016,
}

@inproceedings{CTT100783289,
  author = {Tamayo, R.E.E. and Watanabe, K. and Sugiyama, M. and Hoshii, T. and Shoji, Y. and Okada, Y. and Miyano, K. and Takuya Hoshii},
  title = {Fabrication of broadband antireflection structures on glass substrates by Reactive Ion Etching for application on homogenizers in CPV systems},
  booktitle = {Conference Record of the IEEE Photovoltaic Specialists Conference},
  year = 2013,
}

@inproceedings{CTT100783290,
  author = {Taoka, N. and Yokoyama, M. and Kim, S.H. and Suzuki, R. and Iida, R. and Lee, S. and Hoshii, T. and Jevasuwan, W. and Maeda, T. and Yasuda, T. and Ichikawa, O. and Fukuhara, N. and Hata, M. and Takenaka, M. and Takagi, S. and Takuya Hoshii},
  title = {Impact of Fermi level pinning inside conduction band on electron mobility of In <inf>x</inf>Ga <inf>1-x</inf>As MOSFETs and mobility enhancement by pinning modulation},
  booktitle = {Technical Digest - International Electron Devices Meeting, IEDM},
  year = 2011,
}

@inproceedings{CTT100811302,
  author = {安田 哲二 and 宮田 典幸 and 卜部 友二 and 石井 裕之 and 板谷 太郎 and 前田 辰郎 and 山田 永 and 福原 昇 and 秦 雅彦 and 大竹 晃浩 and 星井 拓也 and 横山 正史 and 竹中 充 and 高木 信一},
  title = {High-k/III-V 界面の組成・構造とMIS特性との関係},
  booktitle = {電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス},
  year = 2010,
}

@inproceedings{CTT100783291,
  author = {Yasuda, T. and Miyata, N. and Urabe, Y. and Ishii, H. and Itatani, T. and Takagi, H. and Yamada, H. and Fukuhara, N. and Hata, M. and Ohtake, A. and Yokoyama, M. and Hoshii, T. and Haimoto, T. and Deura, M. and Sugiyama, M. and Takenaka, M. and Takagi, S. and Takuya Hoshii},
  title = {Relationships between interface structures and electrical properties in the high-κ/III-V system},
  booktitle = {Materials Research Society Symposium Proceedings},
  year = 2010,
}

@inproceedings{CTT100905146,
  author = {Yasuda, T. and Miyata, N. and Urabe, Y. and Ishii, H. and Itatani, T. and Takagi, H. and Yamada, H. and Fukuhara, N. and Hata, M. and Ohtake, A. and Yokoyama, M. and Hoshii, T. and Haimoto, T. and Deura, M. and Sugiyama, M. and Takenaka, M. and Takagi, S. and Takuya Hoshii},
  title = {Relationships between interface structures and electrical properties in the high-κ/III-V system},
  booktitle = {Materials Research Society Symposium Proceedings},
  year = 2010,
}

@inproceedings{CTT100783294,
  author = {Deura, M. and Hoshii, T. and Takenaka, M. and Takagi, S. and Nakano, Y. and Sugiyama, M. and Takuya Hoshii},
  title = {Uniform InGaAs micro-discs on Si by micro-channel selective-area movpe},
  booktitle = {Conference Proceedings - International Conference on Indium Phosphide and Related Materials},
  year = 2009,
}

@inproceedings{CTT100811300,
  author = {出浦 桃子 and 近藤 佳幸 and 星井 拓也 and 竹中 充 and 高木 信一 and 中野 義昭 and 杉山 正和},
  title = {微小領域選択MOVPEにおけるSi上InGaAsの原子構造と光学特性解析},
  booktitle = {化学工学会 研究発表講演要旨集},
  year = 2009,
}

@inproceedings{CTT100783293,
  author = {Takenaka, M. and Takeda, K. and Hoshii, T. and Tanemura, T. and Sugiyama, M. and Nakano, Y. and Takagi, S. and Takuya Hoshii},
  title = {Source/drain formation by using epitaxial regrowth of N+InP for III-V nmosfets},
  booktitle = {Conference Proceedings - International Conference on Indium Phosphide and Related Materials},
  year = 2009,
}

@inproceedings{CTT100783292,
  author = {Deura, M. and Kondo, Y. and Hoshii, T. and Takenaka, M. and Takagi, S. and Nakano, Y. and Sugiyama, M. and Takuya Hoshii},
  title = {In Situ monitoring of the initial nucleation for the formation of uniform InGaAs micro-discs on Si},
  booktitle = {ECS Transactions},
  year = 2009,
}

@inproceedings{CTT100811299,
  author = {出浦 桃子 and 星井 拓也 and 杉山 正和 and 中根 了昌 and 菅原 聡 and 竹中 充 and 高木 信一 and 中野 義昭},
  title = {微小領域選択成長によるSi上III/V化合物半導体層の形成},
  booktitle = {化学工学会 研究発表講演要旨集},
  year = 2008,
}

@inproceedings{CTT100809879,
  author = {Hoshii Takuya and SATOSHI SUGAHARA and Takagi Shin-ichi},
  title = {Effect of tensile strain on gate current of strained-Si n-channel metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)},
  booktitle = {Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers},
  year = 2007,
}

@inproceedings{CTT100811301,
  author = {出浦 桃子 and 星井 拓也 and 竹中 充 and 高木 信一 and 中野 義昭 and 杉山 正和},
  title = {Si上InGaAsの微小領域選択MOVPEにおける横方向成長促進と均一性向上},
  booktitle = {化学工学会 研究発表講演要旨集},
  year = ,
}

@misc{CTT100700421,
  author = {星井拓也},
  title = {高品質InGaAs MOS界面形成のためのInGaAs表面制御についての研究},
  year = 2011,
}

@misc{CTT100894462,
  author = {星井拓也 and 筒井一生},
  title = {ｐチャネルＧａＮＭＯＳデバイス及びその製造方法},
  howpublished = {公開特許},
  year = 2023,
  month  = {},
  note   = {特願2021-137005(2021/08/25), 特開2023-031488(2023/03/09)}
}




@phdthesis{CTT100700421,
  author = {星井拓也},
  title = {高品質InGaAs MOS界面形成のためのInGaAs表面制御についての研究},
  school = {東京大学},
  year = 2011,
}