@inproceedings{CTT100861332,
  author = {Masahiro Watanabe and Naoyuki Shigyo and Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Katsumi Satoh and Tomoko Matsudai and Takuya Saraya and Iriya Muneta and Hitoshi Wakabayashi and Akira Nakajima and Shin-ichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices},
  booktitle = {Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)},
  year = 2021,
}