@article{CTT100883067,
  author = {Si-Meng Chen and Sung Lin Tsai and Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Edward Yi Chang and Kuniyuki KAKUSHIMA},
  title = {GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}