論文

• Ho Hoang Huy, Julian Sasaki, Nguyen Huynh Duy Khang, Pham Nam Hai, Q. LE, B. YORK, C. Hwang, X. LIU, M. GRIBELYUK, X. XU, S. LE, M. HO, H. TAKANO. Large inverse spin Hall effect in BiSb topological insulator for 4 Tb/in2 magnetic recording technology, Applied Physics Letters, Vol. 122, pp. 052401, Jan. 2023.

国際会議発表 (査読なし・不明)

• Ho Hoang Huy, J. SASAKI, N. H. D. KHANG, Pham NAM HAI, Q. LE, B. YORK, C. Hwang, X. LIU, M. GRIBELYUK, X. XU, S. LE, M. HO, H. TAKANO. Giant inverse spin Hall effect in BiSb topological insulator for 4 Tbpsi magnetic recording technology, VANJ Conference 2022, Nov. 2022.

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