論文

• Takamasa KAWANAGO, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya HOSHII, Kuniyuki Kakushima, Kazuo TSUTSUI, Hitoshi WAKABAYASHI. Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs, Japanese Journal of Applied Physics (JJAP), Vol. 61, Feb. 2022.

国際会議発表 (査読有り)

• Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd Down to 0.5 V Consisting of WSe2 n/p FETs, International Conference on Solid State Devices and Materials, Sept. 2021.
• Takahiro Matsuzaki, Takamasa Kawanago, SHUNRI ODA. Impact of Contact Doping on Electrical Characteristics in WSe2 FET, The Electrochemical Society PRiME 2020, Oct. 2020.

国内会議発表 (査読なし・不明)

• 松﨑貴広, 大場智昭, 川那子高暢, 小田俊理. PVAによるMoS2FETへのキャリアドーピングと電気特性への影響, 2019年 第80回 応用物理学会秋季学術講演会, Sept. 2019.

[ BibTeX 形式で保存 ]    [ 論文・著書をCSV形式で保存 ]    [ 特許をCSV形式で保存 ]