@article{CTT100647654,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs},
  journal = {Solid-State Electronics},
  year = 2012,
}

@article{CTT100647648,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Natori and HIROSHI IWAI},
  title = {Gate Capacitance Modeling and Diamater-Drpendent Performance of Nanowire MOSFETs},
  journal = {IEEE Transactions on Electron Deviices},
  year = 2012,
}

@article{CTT100647573,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature},
  journal = {IEEE Transactions on Electron Devices},
  year = 2012,
}

@article{CTT100647574,
  author = {Takamasa Kawanago and 鈴木 拓也 and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process},
  journal = {Solid-State Electronics},
  year = 2012,
}

@article{CTT100607473,
  author = {Yeonghun Lee and KENJI NATORI and HIROSHI IWAI and Kuniyuki KAKUSHIMA and Kenji Shiraishi},
  title = {Size-Dependent Properties of Ballistic Silicon Nanowire Field Effect Transistors},
  journal = {Journal of Applied Physics},
  year = 2010,
}

@article{CTT100608503,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Shiraishi and KENJI NATORI and HIROSHI IWAI},
  title = {Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors},
  journal = {Applied Physics Letters97, 1},
  year = 2010,
}

@article{CTT100613522,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Shiraishi and KENJI NATORI and HIROSHI IWAI},
  title = {Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors},
  journal = {Applied Physics Letters97, 1, ????,2010},
  year = 2010,
}

@inproceedings{CTT100654679,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Characterization of Effective Electron Mobility in n/MOSFETs with Direct Contact La-silicate/Si Structure},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654913,
  author = {W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI},
  title = {Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ~Impact of charge-centroid in the channel due to quantum effect on 1/f noise ~},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100649139,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Metal Inserted Poly-Si wirh High Temperature Annealing for Achieving EOT of 0.62nm in La-silicate MOSFET},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654592,
  author = {Michihiro Hosoda and Yeonghun Lee and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Size dependent phonon limited electron mobility of Si nanowire},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657534,
  author = {大毛利健治 and W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI and Keisaku Yamada},
  title = {Low-frequency noise reduction in Si Nanowire MOSFETs},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657536,
  author = {大毛利健治 and W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI and Keisaku Yamada},
  title = {Low-frequency noise reduction in Si Nanowire MOSFETs},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657535,
  author = {大毛利健治 and W. Feng and R. Hettiarachchi and Yeonghun Lee and Soshi Sato and Kuniyuki KAKUSHIMA and M. Sato and K. Fukuda and M. Niwa and K. Yamabe and Kenji Shiraishi and HIROSHI IWAI and Keisaku Yamada},
  title = {Low-frequency noise reduction in Si Nanowire MOSFETs},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657192,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Natori and HIROSHI IWAI},
  title = {Corner Effects on Phonon-Limited Mobility in Rectangular Si Nanowire MOSFETs},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657247,
  author = {Michihiro Hosoda and Yeonghun Lee and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and HIROSHI IWAI},
  title = {Size-dependent phonon-limited electron mobility in Si Nanowire MOSFETs},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100615994,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and KENJI NATORI and HIROSHI IWAI},
  title = {Cross-Sectional Distribution of Phonon-Limited Electron Mobility in Rectangular Silicon Nanowire Field Effect Transistors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622610,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and KENJI NATORI and HIROSHI IWAI},
  title = {Corner Effects on Phonon-Limited Mobility in Rectangular Si Nanowire MOSFETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628848,
  author = {細田倫央 and 李映勲 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
  title = {矩形断面SiナノワイヤMOSFETにおけるフォノン散乱に制限された移動度のサイズ依存性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100616065,
  author = {李映勲 and 角嶋邦之 and 白石賢二 and 名取研二 and 岩井洋},
  title = {バリスティックナノワイヤトランジスタ性能の太さ依存における状態密度と静電容量のトレードオフ},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613533,
  author = {Soshi Sato and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and Kenji Ohmori and KENJI NATORI and Keisaku Yamada and HIROSHI IWAI},
  title = {Gate Semi-Around Si Nanowire FET Fabricated by Conventional CMOS Process with Very High Drivability},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613532,
  author = {Takamasa Kawanago and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Optimized Oxygen Annealing Process for Vth Tuning of p-MOSFET with High-k/Metal Gate Stacks},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603771,
  author = {李映勲 and 角嶋邦之 and 白石賢二 and 名取研二 and 岩井洋},
  title = {バリスティックSiナノワイヤトランジスタの電気特性の直径依存性},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100630956,
  author = {李映勲 and 角嶋邦之 and 名取研二 and 岩井洋},
  title = {Diameter-dependent injection velocity of ballistic Si nanowire MOSFETs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597923,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Shiraishi and KENJI NATORI and HIROSHI IWAI},
  title = {Size-Dependent Transport Characteristics of Ballistic Silicon Nanowire FETs},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597860,
  author = {Yeonghun Lee and Kuniyuki KAKUSHIMA and Kenji Shiraishi and KENJI NATORI and HIROSHI IWAI},
  title = {Systematic Study on Size Dependences of Transport Parameters for Ballistic Nanowire-FET with Effective Mass Approximation},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585317,
  author = {李映勲 and 永田貴弘 and 角嶋邦之 and 白石賢二 and 名取研二 and 岩井洋},
  title = {引っ張り歪みSiナノワイヤの電子構造とバリスティック伝導},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100576515,
  author = {李映勲 and 永田 貴弘 and 白石 賢二 and 角嶋邦之 and 岩井洋},
  title = {第一原理計算によるシリコンナノワイヤの電子構造解析},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}