論文

• Akira Nakajima, Shunsuke Kubota, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Shin-ichi Nishizawa, Hiromichi Ohashi. GaN-based CMOS Inverter with Normally-off P- and N-channel MOSFETs in GaN/AlGaN/GaN Platform, IET Power Electronics, Vol. 11, No. 4, pp. 689-694, Apr. 2018.

国際会議発表 (査読有り)

• Akira Nakajima, Shunsuke Kubota, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Sin-ichi Nishizawa, Hiromichi Ohashi. Monolithic Integration of GaN-based Normally-off P- and N-channel MOSFETs, 13th International Seminar on Power Semiconductors (ISPS), Aug. 2016.
• A. Nakajima, S. Kubota, R. Kayanuma, K. Tsutsui, K. Kakushima, H. Wakabayashi, H. Iwai, S. Nishizawa, H. Ohashi. An overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform, 2015 IEEE Compound Semiconductor IC Symposium (CSICS2015), Oct. 2015.
• Akira Nakajima, Shin-Ichi Nishizawa, Hiromichi Ohashi, Rei Kayanuma, Kazuo Tsutsui, Shunsuke Kubota, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai. GaN-Based Monolithic Power Integrated Circuit Technology with Wide Operating Temperature on Polarization-Junction Platform, The 27th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD2015), May 2015.

国際会議発表 (査読なし・不明)

• Shunsuke Kubota, Rei Kayanuma, Akira Nakajima, Shin-ichi Nishizawa, Shin-ichi Nishizawa, Hiromichi Ohashi, Hitoshi Wakabayashi, Kazuo Tsutsui. P-Channel AlGaN/GaN MOSFETs for Normally-Off Operation, 2015 Material Research Society (MRS) Fall Meeting, Nov. 2015.

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