論文

• Y. Takamura, T. Akushichi, A. Sadono, T. Okishio, Y. Shuto, S. Sugahara. Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices, J. Appl. Phys., AIP Publishing LLC., vol. 115, no. 17, pp. 17C307/1-3, Apr. 2014.

国際会議発表 (査読有り)

• Y. Takamura, A. Sadono, T. Akushichi, T. Okishio, Y. Shuto, S. Sugahara. Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices, The 58th Annual Magnetism and Magnetic Materials (MMM) Conference, AX-05, Nov. 2013.
• T. Okishio, Y. Takamura, S. Sugahara. Low-barrier ferromagnet source/drain MOSFETs using CoFe/Mg/AlOx/Si depinning contacts, International Symposium on Advanced Hybrid Nano Devices (IS-AHND) : Prospects by World’s Leading Scientists, paper P-42, pp. 131-132, Oct. 2011.
• T. Okishio, Y. Takamura, S. Sugahara. Fabrication of spin-MOSFETs using CoFe/Mg/AlOx/Si tunnel junctions for the source and drain, International Conf. on Solid State Devices and Materials (SSDM), J-4-4, p. 31, Sept. 2011.  公式リンク  
  

国内会議発表 (査読なし・不明)

• Y. Takamura, A. Sadono, T. Akushichi, T. Okishio, Y. Shuto, S. Sugahara. Analysis of Hanle-effect signals observed in a Si-channel spin accumulation device with a high-quality CoFe/MgO/Si spin injector, The 61st JSAP Spring Meeting, 2014, Mar. 2014.
• 置塩貴雄, 高村陽太, 菅原聡. CoFe/Mg/AlOx/Siデピン接合を用いた低バリア強磁性ソース/ドレインMOSFET, 第16回半導体スピン工学の基礎と応用(PASPS-16), p. 75, Nov. 2011.
• 置塩貴雄, 高村陽太, 菅原聡. CoFe/Mg/AlOx/Siトンネル構造をソース/ドレインに用いたスピンMOSFETの作製, 第72回応用物理学会学術講演会, 1p-P10-25, Aug. 2011.

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