国際会議発表 (査読なし・不明)

• 宋 禛漢, Kazuki Matsumoto, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films, J. Song, K. Matsumoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• 宋 禛漢, Kazuki Matsumoto, Kuniyuki KAKUSHIMA, 片岡好則, 西山彰, 杉井信之, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation, ECS 224nd Meeting, ECS Transactions, Vol. 58, No. 7, pp. 87-91, Oct. 2013.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Size dependent resistivity change of Ni-silicides in nano-region, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• 宋 禛漢, 小山将央, Kazuki Matsumoto, Kuniyuki KAKUSHIMA, 中塚理, 大毛利健治, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Keisaku Yamada, HIROSHI IWAI. Atomically flat Ni-silicide/Si interface using NiSi2 sputtering, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), 2013.
• Kazuki Matsumoto, 小山将央, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si fin and nanowire structures, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Electrical Analyses of Nickel Silicide Formed on Si Nanowires with 10-nm-width, International Symposium on Next-Generation Electronics(ISNE 2013), 2013.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si Fin and nanowire strucures, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Kazuki Matsumoto, 小山将央, Y. Wu, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Ni silicidation for Si Fin and nanowire strucures, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.

国内会議発表 (査読なし・不明)

• 宋 禛漢, 松本一輝, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 服部健雄, 岩井洋. Niシリサイドナノワイヤ抵抗率のNi膜厚依存性, 第74回応用物理学会秋季学術講演会, 2013.
• 松本一輝, 小山将央, 呉研, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. 酸化膜被覆型SiナノワイヤおよびSi Fin構造におけるNiシリサイド成長機構の検討, 第72回応用物理学会学術講演会, 2011.

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