@article{CTT100881315,
  author = {Taiga Horiguchi and Takuya Hamada and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@article{CTT100875618,
  author = {Takuya Hamada and Masaya Hamada and Taiga Horiguchi and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {High Seebeck Coefficient in PVD-WS2 Film with Grain-Size Enlargement},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100875617,
  author = {Ryo Ono and Shinya Imai and Yuta Kusama and Takuya Hamada and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Emi Kano and Nobuyuki Ikarashi and Hitoshi Wakabayash},
  title = {Elucidation of PVD MoS2 Film Formation Process and its Structure Focusing on Sub-Monolayer Region},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100875613,
  author = {Takuya Hamada and Masaya Hamada and Satoshi Igarashi and Taiga Horiguchi and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box},
  journal = {Journal of the Electron Devices Society (J-EDS)},
  year = 2021,
}

@article{CTT100855464,
  author = {Shinya Imai and Takuya Hamada and Masaya Hamada and Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Tetsuya Tatsumi and Shigetaka Tomiya and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Importance of Crystallinity Improvement in MoS2 film just after MoS2-Compound Sputtering even followed by Post Sulfurization for Chip-Size Fabrication},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100855473,
  author = {Takuya Hamada and Shigetaka Tomiya and Tetsuya Tatsumi and Masaya Hamada and Taiga Horiguchi and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Sheet Resistance Reduction of MoS2 Film using Sputtering and Chlorine Plasma Treatment followed by Sulfur Vapor Annealing},
  journal = {Journal of the Electron Devices Society (J-EDS)},
  year = 2021,
}

@article{CTT100855471,
  author = {Masaya Hamada and Kentaro Matsuura and Takuya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100855454,
  author = {Kentaro Matsuura and Masaya Hamada and Takuya Hamada and Haruki Tanigawa and Takuro Sakamoto and Atsushi Hori and Iriya Muneta and Takamasa Kawanago and Kuniyuki Kakushima and Kazuo},
  title = {Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2020,
}

@inproceedings{CTT100896554,
  author = {濱田 昌也 and 松浦 賢太朗 and 濱田 拓也 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100896550,
  author = {立松 真一 and 濱田 昌也 and 濱田 拓也 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {アニール処理によるWS2-Niエッジコンタクト特性の向上},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100877149,
  author = {Ryo Ono and Shinya Imai and Yuta Kusama and Takuya Hamada and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Nobuyuki Ikarashi and Hitoshi Wakabayashi},
  title = {Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877147,
  author = {Takuya Hamada and Taiga Horiguchi and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877142,
  author = {Masaya Hamada and Takuya Hamada and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Side-Contact Architecture for p/n-Stacked-Nano-Sheet ZrS2 2D-FETs Beyond 1-nm Technology Node},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100848915,
  author = {筒井一生 and 濱田拓也 and 高山 研 and 金 相佑 and 星井拓也 and 角嶋邦之 and 若林 整 and 高橋言緒 and 井手利英 and 清水三聡},
  title = {選択成長法を用いたGaN 系FinFET},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100855937,
  author = {Shinya Imai and Takuya Hamada and Masaya Hamada and Takanori Shirokura and Shigetaka Tomiya and Iriya Muneta and Kuniyuki Kakushima and Tetsuya Tatsumi and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855932,
  author = {Masaya Hamada and Kentaro Matsuura and Takuya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848908,
  author = {高山 研 and 太田 貴士 and 佐々木 満孝 and 向井 勇人 and 濱田 拓也 and 高橋 言雄 and 井出 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100829205,
  author = {松浦 賢太朗 and 濱田 昌也 and 濱田 拓也 and 谷川 晴紀 and 坂本 拓朗 and 堀 敦 and 宗田 伊理也 and 川那子 高暢 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100813992,
  author = {Takuya Hamada and Shinpei Yamaguchi and Taiga Horiguchi and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Comparative and Systematic Study of Doping Technology for 2D -Sputtered SputteredSputtered MoS 2 Film},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829184,
  author = {向井 勇人 and 髙山 研 and 濱田 拓也 and 高橋 言緒 and 井手 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {選択成長法を用いたGaN FinFETの作製},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829201,
  author = {濱田 拓也 and 堀口 大河 and 辰巳 哲也 and 冨谷 茂隆 and 濱田 昌也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜のCl2プラズマ処理によるシート抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829183,
  author = {高山 研 and 向井 勇人 and 濱田 拓也 and 高橋 言緒 and 井手 利英 and 清水 三総 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {GaN Fin構造選択成長における低抵抗領域の発生原因の検討},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829177,
  author = {堀口 大河 and 濱田 拓也 and 辰巳 哲也 and 冨谷 茂隆 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜のSF6プラズマ処理によるシート抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813978,
  author = {K. Matsuura and M. Hamada and T. Hamada and H. Tanigawa and T. Sakamoto and W. Cao and K. Parto and A. Hori and I. Muneta and T. Kawanago and K. Kakushima and K. Tsutsui and A. Ogura and K. Banerjee and H. Wakabayashi},
  title = {Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816748,
  author = {濱田 拓也 and 向井 勇人 and 高橋 言緒 and 井手 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {FinFET応用に向けた選択成長GaNチャネルの電気特性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100786671,
  author = {Takuya Hamada and Hayato Mukai and Tokio Takahashi and Toshihide Ide and Mitsuaki Shimizu and Hiroki Kuroiwa and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Kazuo Tsutsui},
  title = {Electrical properties of selectively grown GaN channel for FinFETs},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816741,
  author = {向井 勇人 and 濱田 拓也 and 高橋 言緒 and 井出 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816730,
  author = {濱田拓也 and 向井勇人 and 高橋言緒 and 井手利英 and 清水三聡 and 星井拓也 and 角嶋邦之 and 若林整 and 岩井洋 and 筒井一生},
  title = {FinFET応用に向けた選択成長GaNチャネルの電気特性},
  booktitle = {},
  year = 2018,
}

@misc{CTT100866732,
  author = {Takuya Hamada},
  title = {Fundamental Technologies for PVD-TMDC Film Based Thermoelectric Generator},
  year = 2022,
}

@misc{CTT100866730,
  author = {Takuya Hamada},
  title = {Fundamental Technologies for PVD-TMDC Film Based Thermoelectric Generator},
  year = 2022,
}

@misc{CTT100894808,
  author = {Takuya Hamada},
  title = {Fundamental Technologies for PVD-TMDC Film Based Thermoelectric Generator},
  year = 2022,
}

@misc{CTT100866734,
  author = {Takuya Hamada},
  title = {Fundamental Technologies for PVD-TMDC Film Based Thermoelectric Generator},
  year = 2022,
}



@phdthesis{CTT100866732,
  author = {Takuya Hamada},
  title = {Fundamental Technologies for PVD-TMDC Film Based Thermoelectric Generator},
  school = {東京工業大学},
  year = 2022,
}

@phdthesis{CTT100866730,
  author = {Takuya Hamada},
  title = {Fundamental Technologies for PVD-TMDC Film Based Thermoelectric Generator},
  school = {東京工業大学},
  year = 2022,
}

@phdthesis{CTT100894808,
  author = {Takuya Hamada},
  title = {Fundamental Technologies for PVD-TMDC Film Based Thermoelectric Generator},
  school = {東京工業大学},
  year = 2022,
}

@phdthesis{CTT100866734,
  author = {Takuya Hamada},
  title = {Fundamental Technologies for PVD-TMDC Film Based Thermoelectric Generator},
  school = {東京工業大学},
  year = 2022,
}