@article{CTT100905206,
  author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai},
  title = {Integration of BiSb Topological Insulator and CoFeB/MgO With Perpendicular Magnetic Anisotropy Using an Oxide Interfacial Layer for Ultralow Power SOT-MRAM Cache Memory},
  journal = {IEEE Transactions on Magnetics},
  year = 2023,
}

@inproceedings{CTT100905211,
  author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai},
  title = {Large spin Hall effect in BiSb topological insulator/CrOx/CoFeB/MgO with perpendicular magnetic anisotropy for ultralow power SOT-MRAM},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100900901,
  author = {Ho Hoang Huy and R. Zhang and T. Shirokura and S. Takahashi and Y. Hirayama and Pham Nam Hai},
  title = {Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power SOT-MRAM cache memory},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100886126,
  author = {Zhang Ruixian and Takanori Shirokura and Tuo Fan and Pham Nam Hai},
  title = {Fabrication and evaluation of fully sputtered topological insulator/perpendicularly magnetized CoFeB/MgO multilayers for SOT-MRAM application},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100888691,
  author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai},
  title = {Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power spin-orbit torque magnetic memory},
  booktitle = {},
  year = 2023,
}