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宗田伊理也 2019年 研究業績一覧 (19件 / 148件)
論文
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Masaya Hamada,
Kentaro Matsuura,
Takuro Sakamoto,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film using UHV RF Magnetron Sputtering and Sulfurization,
Journal of the Electron Devices Society (J-EDS),
IEEE,
Vol. 7,
No. 1,
pp. 1258-1263,
Dec. 2019.
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Takanori Shirokura,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing,
Applied Physics Letters,
Vol. 115,
p. 192404,
Nov. 2019.
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Jaejun Kim,
Hiroyoshi Ohtsu,
Taizen Den,
Krittanun Deekamwong,
Iriya Muneta,
Masaki Kawano.
Control of anisotropy of a redox-active molecule-based film leads to non-volatile resistive switching memory,
Chemical Science,
Royal Society of Chemistry,
Vol. 10,
pp. 10888 - 10893,
Oct. 2019.
国際会議発表 (査読有り)
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H. Tanigawa,
K. Matsuura,
I. Muneta,
T. Hoshii,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
Positive Threshold Voltage in Accumulation Capacitance of TiN-Top-Gate/High-k/Sputtered-MoS2 Stacks,
Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019),
Nov. 2019.
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Ryunosuke Otsuki,
Yuta Suzuki,
Takuro Sakamoto,
Takanori Shirokura,
Iriya Muneta,
Masahiro Nagao,
Hitoshi Wakabayashi,
Nobuyuki Ikarashi.
Structural analysis of MoS2 films fabricated by radiofrequency sputtering using highangle annular dark field scanning transmission electron microscopy,
International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019),
Nov. 2019.
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Tomohiko Yamagishi,
Atsushi Hori,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET,
Int. Conf. on Solide State Devices and Materials (SSDM2019),
Sept. 2019.
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Iriya Muneta,
Naoki Hayakawa,
Takanori Shirokura,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Ferromagnetic tunnel devices with two-dimensional layered material MoS2,
Collaborative Conference on Materials Research (CCMR) 2019,
June 2019.
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K. Matsuura,
M. Hamada,
T. Hamada,
H. Tanigawa,
T. Sakamoto,
W. Cao,
K. Parto,
A. Hori,
I. Muneta,
T. Kawanago,
K. Kakushima,
K. Tsutsui,
A. Ogura,
K. Banerjee,
H. Wakabayashi.
Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration,
Int. Workshop on Juction Technology (IWJT2019),
June 2019.
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Masahiro Watanabe,
Naoyuki Shigyo,
Takuya Hoshii,
Kazuyoshi Furukawa,
Kuniyuki Kakushima,
Katsumi Satoh,
Tomoko Matsudai,
Takuya Saraya,
Toshihiro Takakura,
Kazuo Itou,
Munetoshi Fukui,
Shinichi Suzuki,
Kiyoshi Takeuchi,
Iriya Muneta,
Hitoshi Wakabayashi,
Akira Nakajima,
Shin-ichi Nishizawa,
Kazuo Tsutsui,
Toshiro Hiramoto,
Hiromichi Ohashi,
Hiroshi Iwai.
Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs,
31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019),
May 2019.
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Masaya Hamada,
Kentaro Matsuura,
Takuro Sakamoto,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing,
3rd Electron Devices Technology and Manufactureing Conference (EDTM2019),
Mar. 2019.
国際会議発表 (査読なし・不明)
国内会議発表 (査読なし・不明)
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渡辺正裕,
執行直之,
星井拓也,
古川和由,
角嶋邦之,
佐藤克己,
末代知子,
更屋拓哉,
高倉俊彦,
伊藤一夫,
福井宗利,
鈴木慎一,
竹内 潔,
宗田伊里也,
若林 整,
中島 昭,
西澤伸一,
筒井一生,
平本俊郎,
大橋弘通,
岩井洋.
トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション,
電子情報通信学会 SDM(シリコン材料・デバイス)研究会,
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報,
電子情報通信学会,
Vol. 119,
No. 273,
pp. 45-48,
Nov. 2019.
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今井 慎也,
濱田 昌也,
五十嵐 智,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
硫化プロセスにおけるスパッタMoS2膜質向上の重要性,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
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Takanori Shirokura,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Edge induced ferromagnetism in sputtered MoS2 film controlled by annealing,
The 80th JSAP Autumn meeting,
Sept. 2019.
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濱田 昌也,
松浦 賢太朗,
宗田 伊理也,
星井 拓也,
角嶋 邦之,
筒井 一生,
若林 整.
スパッタ法と硫黄雰囲気アニールで成膜した高いホール効果移動度を持つ層状ZrS2膜,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
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谷川 晴紀,
松浦 賢太朗,
宗田 伊理也,
星井 拓也,
角嶋 邦之,
筒井 一生,
若林 整.
正の閾値電圧のMetal-Top-Gate/High-k/スパッタMoS2の蓄積容量特性,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
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山岸 朋彦,
堀 敦,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
横型p/n積層ナノワイヤによるNORとNANDセルの省面積設計,
第80回応用物理学会秋季学術講演会,
Sept. 2019.
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松浦 賢太朗,
濱田 昌也,
坂本 拓朗,
谷川 晴紀,
宗田 伊理也,
石原 聖也,
角嶋 邦之,
筒井 一生,
小椋 厚志,
若林 整.
F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減,
第66回応用物理学会春期学術講演会,
Mar. 2019.
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松浦賢太朗,
清水淳一,
外山真矢人,
大橋匠,
坂本拓朗,
宗田伊理也,
石原聖也,
角嶋邦之,
筒井一生,
小椋厚志,
若林整.
大面積集積化に向けたスパッタ二次元半導体 MoS2 薄膜のTop-gate nMISFETs チャネル応用,
応用物理学会シリコンテクノロジー分科会第216回研究集会,
Feb. 2019.
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