|
宗田伊理也 2020年 研究業績一覧 (8件 / 148件)
論文
-
Masaya Hamada,
Kentaro Matsuura,
Takuro Sakamoto,
Haruki Tanigawa,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation,
Japanese Journal of Applied Physics (JJAP),
Vol. 59,
No. 10,
Page 105501,
Sept. 2020.
-
Kentaro Matsuura,
Masaya Hamada,
Takuya Hamada,
Haruki Tanigawa,
Takuro Sakamoto,
Atsushi Hori,
Iriya Muneta,
Takamasa Kawanago,
Kuniyuki Kakushima,
Kazuo.
Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration,
Japanese Journal of Applied Physics (JJAP) (Rapid Communication),
Vol. 59,
No. 8,
Page 80906,
Aug. 2020.
-
Haruki Tanigawa,
Kentaro Matsuura,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Enhancement-Mode Accumulation Capacitance-Voltage Characteristics in TiN/ALD-Al2O3/Sputtered-MoS2 Top-Gated Stacks,
Japanese Journal of Applied Physics (JJAP),
Vol. 59,
Apr. 2020.
-
Tomohiko Yamagishi,
Atsushi Hori,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Self-Heating-Aware Cell Design for p/n-Vertically-Integrated Nanowire on FinFET beyond 3-nm Technology Node,
Japanese Journal of Applied Physics,
Vol. 59,
No. SG,
Feb. 2020.
国際会議発表 (査読有り)
-
Shinya Imai,
Takuya Hamada,
Masaya Hamada,
Takanori Shirokura,
Shigetaka Tomiya,
Iriya Muneta,
Kuniyuki Kakushima,
Tetsuya Tatsumi,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication,
International Conference of Solid State Devices and Materials (SSDM) 2020,
Sept. 2020.
-
Masaya Hamada,
Kentaro Matsuura,
Takuya Hamada,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack,
International Conference of Solid State Devices and Materials (SSDM) 2020,
Sept. 2020.
-
Satoshi Igarashi,
Yusuke Mochiduki,
Haruki Tanigawa,
Masaya Hamada,
Kentaro Matsuura,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Low Contact Resistance at Interface between Sputtered-MoS2 Film and TiSi2 Contact Treated by Higher-Temperature Forming-Gas Annealing,
International Conference of Solid State Devices and Materials (SSDM) 2020,
Sept. 2020.
国内会議発表 (査読なし・不明)
-
松浦 賢太朗,
濱田 昌也,
濱田 拓也,
谷川 晴紀,
坂本 拓朗,
堀 敦,
宗田 伊理也,
川那子 高暢,
角嶋 邦之,
筒井 一生,
小椋 厚志,
若林 整.
大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs,
第67回応用物理学会春期学術講演会,
Mar. 2020.
[ BibTeX 形式で保存 ]
[ 論文・著書をCSV形式で保存
]
[ 特許をCSV形式で保存
]
|