@article{CTT100647718,
  author = {Miyuki Kouda and 鈴木 拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI and 安田哲二},
  title = {Electrical Properties of CeO2/La2O3 Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition},
  journal = {Japanese Journal of Applied Physics},
  year = 2012,
}

@article{CTT100647653,
  author = {鈴木 拓也 and 久保田透 and Ahmet Parhat and HIROSHI IWAI},
  title = {La2O3 gate insulators prepared by atomic layer deposition: Optimal growth conditions and MgO/La2O3 stacks for improved metal-oxide-semiconductor characteristics},
  journal = {Journal of Vacuum Science & Technology A},
  year = 2012,
}

@article{CTT100647574,
  author = {Takamasa Kawanago and 鈴木 拓也 and Yeonghun Lee and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process},
  journal = {Solid-State Electronics},
  year = 2012,
}

@inproceedings{CTT100657191,
  author = {Miyuki Kouda and 鈴木 拓也 and Kuniyuki KAKUSHIMA and パールハットアヘメト and HIROSHI IWAI},
  title = {Stack structures of ALD- La2O3 and CVD-CeO2 : fabrication and mobility improvement effects},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657213,
  author = {鈴木 拓也 and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and HIROSHI IWAI and 安田哲二},
  title = {Formation and electrical characterization of MgO - incorporated La2O3 gate insulators by ALD},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100622686,
  author = {Takamasa Kawanago and 鈴木 拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {An effective process for oxygen defect suppression for La-based oxide gate dielectric},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100627782,
  author = {鈴木 拓也 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and 安田哲二},
  title = {ALDによるMgO添加La2O3ゲート絶縁膜の形成及び電気特性評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623969,
  author = {Ahmet Parhat and 来山大祐 and 金田翼 and 鈴木 拓也 and Tomotsune Koyanagi and Miyuki Kouda and マイマイティ マイマイティレャアティ and Takamasa Kawanago and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623983,
  author = {Ahmet Parhat and 来山大祐 and 金田翼 and 鈴木 拓也 and Tomotsune Koyanagi and Miyuki Kouda and マイマイティ マイマイティレャアティ and Takamasa Kawanago and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High –k Gate Stacks},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100615536,
  author = {Ahmet Parhat and 来山大祐 and 金田 翼 and 鈴木  拓也 and Tomotsune Koyanagi and Miyuki Kouda and M. Mamatrishat and Takamasa Kawanago and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Scaling of EOT Beyond 0.5nm},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616062,
  author = {鈴木 拓也 and 川那子高暢 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希釈酸素雰囲気熱処理を用いたLaシリケート/Si MOS構造のVFB/Vthシフトの低EOTへの適用},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630990,
  author = {川那子高暢 and 鈴木 拓也 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {An Effective Process for Oxygen Defects Suppression for La-based Oxide Gate Dielectric},
  booktitle = {},
  year = 2010,
}