@article{CTT100765853,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Wakabayashi and A. Ogura},
  title = {Large Scale Uniformity of Sputtering Deposited Single- and Few-Layer MoS2 Investigated by XPS Multipoint Measurements and Histogram Analysis of Optical Contrast},
  journal = {ECS J. Solid State Sci. Technol.},
  year = 2016,
}

@article{CTT100765854,
  author = {S. Ishihara and Y. Hibino and N. Sawamoto and K. Suda and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Properties of single-layer MoS2 film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9)2S2},
  journal = {Japan Journal of Applied Physics},
  year = 2016,
}

@article{CTT100765855,
  author = {Y. Hibino and N. Sawamoto and K. Suda and T. Ohashi and K. Matsuura and H. Machida and M. Ishikawa and H. Sudoh and H. Wakabayashi and A. Ogura},
  title = {Improving crystalline quality of sputtering-deposited MoS2 thin film by postdeposition sulfurization annealing using (t-C4H9)2S2},
  journal = {Japan Journal of Applied Physics},
  year = 2016,
}

@inproceedings{CTT100780956,
  author = {J. Shimizu and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming-Gas Annealing for 3D-IC},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100780948,
  author = {K. Matsuura and T. Ohashi and I. Muneta and S. Ishihara and N. Sawamoto and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film},
  booktitle = {Proc. of 47th IEEE Semiconductor Interface Specialists Conference (SISC)},
  year = 2016,
}