@article{CTT100754182, author = {Y. Takamura and Y. Shuto and S. Yamamoto and H. Funakubo and M. Kurosawa and S. Nakagawa and S. Sugahara}, title = {Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAM}, journal = {Solid-State Electron.}, year = 2016, } @inproceedings{CTT100742357, author = {清野稔仁 and 悪七泰樹 and 菅原聡}, title = {CoFe/Hf系酸化物/Siスピン注入源の作製と評価}, booktitle = {}, year = 2016, } @inproceedings{CTT100742358, author = {北形大樹 and 悪七泰樹 and 菅原聡}, title = {電界アシスト4端子非局所MOSデバイスの解析と設計}, booktitle = {}, year = 2016, } @inproceedings{CTT100748214, author = {Yota Takamura and Yusuke Shuto and Shu'uichiro Yamamoto and Hiroshi Funakubo and Minoru Kurosawa and Shigeki Nakagawa and Satoshi Sugahara}, title = {nverse-Magnetostriction-Induced Switching Current Reduction Technique for Spin-Transfer Torque MTJs and Its Low-Power MRAM Applications}, booktitle = {}, year = 2016, } @inproceedings{CTT100742356, author = {近藤剛 and 千脇那菜 and 菅原聡}, title = {高密度集積化薄膜トランスバース型マイクロ熱電発電モジュールの設計}, booktitle = {}, year = 2016, } @inproceedings{CTT100742351, author = {Y. Shuto and S. Yamamoto and S. Sugahara}, title = {Energy Performance of Nonvolatile Power-Gating SRAM Using SOTB Technology}, booktitle = {}, year = 2016, } @inproceedings{CTT100742350, author = {Y. Shuto and S. Yamamoto and S. Sugahara}, title = {Design and Implementation of Nonvolatile Power-Gating SRAM Using SOTB Technology}, booktitle = {}, year = 2016, } @inproceedings{CTT100742349, author = {T. Akushichi and D. Kitagata and Y. Takamura and Y. Shuto and S. Sugahara}, title = {Spin Accumulation in a Si Channel using High-Quality CoFe/MgO/Si Spin Injectors}, booktitle = {}, year = 2016, } @inproceedings{CTT100742348, author = {D. Kitagata and T. Akushichi and Y. Takamura and Y. Shuto and S. Sugahara}, title = {Robust Design of Electric-field-assisted Nonlocal Si-MOS Spin-devices}, booktitle = {}, year = 2016, } @inproceedings{CTT100742347, author = {Y. Shuto and S. Yamamoto and S. Sugahara}, title = {Nonvolatile Power-gating Architecture for SRAM using SOTB Technology}, booktitle = {}, year = 2016, } @inproceedings{CTT100742346, author = {Y. Shuto and S. Yamamoto and S. Sugahara}, title = {New power-gating architectures using nonvolatile retention: Comparative study of nonvolatile power-gating (NVPG) and normally-off architectures for SRAM}, booktitle = {}, year = 2016, } @inproceedings{CTT100754181, author = {Y. Takamura and Y. Shuto and S. Yamamoto and H. Funakubo and M.K. Kurosawa and S. Nakagawa and S. Sugahara}, title = {Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAMs}, booktitle = {2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)}, year = 2016, }