@book{CTT100759461,
  author = {Hiromichi Ohta and Hidenori Hiramatsu and HIDEO HOSONO},
  title = {Fabrication, Characterization, and Modulation of Functional Nanolayers},
  publisher = {Springer Singapore},
  year = 2018,
}

@article{CTT100795943,
  author = {Keisuke Ide and Yuki Futakado and Naoto Watanabe and Junghwan Kim and Takayoshi Katase and Hidenori Hiramatsu and Hideo Hosono and Toshio Kamiya},
  title = {Transition metal-doped amorphous oxide semiconductor thin film phosphor, chromium-doped amorphous gallium oxide},
  journal = {Phys. Status Solidi A},
  year = 2018,
}

@article{CTT100770638,
  author = {Yoshinori Muraba and Soshi Iimura and Satoru Matsuishi and hidenori hiramatsu and Takashi Honda and Kazutaka Ikeda and Toshiya Otomo and HIDEO HOSONO},
  title = {Phase transition in CaFeAsH: bridging 1111 and 122 iron-based superconductors},
  journal = {Dalton Transactions},
  year = 2018,
}

@article{CTT100772456,
  author = {Zewen Xiao and Fan-Yong Ran and Min Liao and Hidenori Hiramatsu and Keisuke Ide and Hideo Hosono and Toshio Kamiya},
  title = {Multiple states and roles of hydrogen in p-type SnS semiconductors},
  journal = {},
  year = 2018,
}

@article{CTT100760745,
  author = {Keisuke Ide and * Kyohei Ishikawa and Haochun Tang and Takayoshi Katase and Hidenori Hiramatsu and Hideya Kumomi and Hideo Hosono and Toshio Kamiya},
  title = {Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In‐Ga‐Zn‐O: Ultralow Optimum Oxygen Supply and Bandgap Widening},
  journal = {physica status solidi (a)},
  year = 2018,
}

@inproceedings{CTT100773589,
  author = {Yoshinori Muraba and Soshi Iimura and Satoru Matsuishi and hidenori hiramatsu and Takashi Honda and Kazutaka Ikeda and Toshiya Otomo and HIDEO HOSONO},
  title = {Structural and magnetic transitions in 1111-type iron arsenide CaFeAsH},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779488,
  author = {渡邊脩人 and 井手啓介 and 片瀬貴義 and 笹瀬雅人 and 戸田喜丈 and 金正煥 and 上田茂典 and 堀場弘司 and 組頭広志 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {アモルファス酸化物半導体をホストとする蛍光体を用いた直流駆動型発光素子の室温形成},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779492,
  author = {ホシンイ and シャオチーウェン and 片瀬貴義 and 井手啓介 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {第一原理計算による層状 (AE = Ca, Sr, Ba)の電子構造と欠陥生成・キャリアドーピング機構の理論解析},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779491,
  author = {樋口雄飛 and 井手啓介 and Christian A. Niedermeier and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {エピタキシャル歪により増強されるLaNiO3極薄膜のフォノンドラッグ熱電特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779494,
  author = {松尾健志 and 井手啓介 and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {ガラス上に成長させた層状セレン化スズ薄膜の電気特性と薄膜トランジスタ},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779489,
  author = {山本千紘 and 半沢幸太 and 井手啓介 and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫:},
  title = {FeSb2薄膜のヘテロエピタキシャル成長と熱電特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779487,
  author = {森大介 and 渡邊脩人 and 井手啓介 and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {層状半導体Sr2CuMO3S(M= Ga, In)の合成と光電子物性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779483,
  author = {井手啓介 and 二角勇毅 and 渡邉脩人 and 金正煥 and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {Cr添加アモルファス酸化ガリウム薄膜のフォトルミネッセンス特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779484,
  author = {笠井悠莉華 and 井手啓介 and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {超ワイドバンドギャップアモルファス酸化物半導体a-Ga-Oを用いたショットキーダイオードの作製},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779486,
  author = {西間木祐紀 and 井手啓介 and 渡邊脩人 and 金正煥 and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {希土類添加アモルファス酸化物半導体の電気物性とトランジスタ特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779482,
  author = {T. Kamiya and K. Ide and K. Takenaka and Y. Setsuhara and A. Hiraiwa and H. Kawarada and T. Katase and H. Hiramatsu and H. Hosono},
  title = {Device characteristics of rare-earth doped amorphous oxide semiconductors},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779477,
  author = {Keisuke Ide and Masato Ota and Takayoshi Katase and Hidenori Hiramatsu and Shigenori Ueda and Hideo Hosono and Toshio Kamiya},
  title = {Depth Analysis of Near Valence Band Mximum Defect States in Amorphous Oxide Semiconductors: In-Ga-Zn-O},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779478,
  author = {T. Katase and K. Ide and H. Hiramatsu and H. Hosono and T. Kamiya},
  title = {Electric double layer transistor and electron-transport properties of (Tl,K)2Fe4Se5 thin films},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779479,
  author = {K. Ide and K. Takenaka and Y. Setsuhara and A. Hiraiwa and H. Kawarada and T. Katase and H. Hiramatsu and H. Hosono and T. Kamiya},
  title = {Effects of base pressure on optoelectronic properties of amorphous In–Ga–Zn–O},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779495,
  author = {平松秀典 and 半沢幸太 and 佐藤 光 and 片瀬貴義 and 神谷利夫 and 細野秀雄},
  title = {鉄系超伝導体の薄膜成長とデバイス作製},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100760846,
  author = {井手 啓介 and 太田 雅人 and 岸田 陽介 and 片瀬 貴義 and 平松 秀典 and 上田 茂典 and 雲見 日出也 and 細野 秀雄 and 神谷 利夫},
  title = {[講演奨励賞受賞記念講演] 全反射硬X線光電子分光法によるアモルファス酸化物半導体の価電子帯直上欠陥の深さ方向分布},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779497,
  author = {二角勇毅 and 渡邉脩人 and 井手啓介 and 金正煥 and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {遷移金属元素を発光中心としたアモルファス酸化物半導体蛍光体薄膜の探索},
  booktitle = {},
  year = 2018,
}

@misc{CTT100767063,
  author = {Hideo Hosono and Akiyasu Yamamoto and Hidenori Hiramatsu and Yanwei Ma},
  title = {Recent advances in iron-based superconductors toward applications},
  year = 2018,
}

@misc{CTT100785203,
  author = {細野秀雄 and 半那拓 and 平松秀典},
  title = {高感度昇温脱離ガス分析装置},
  howpublished = {登録特許},
  year = 2021,
  month  = {},
  note   = {特願2017-034677(2017/02/27), 特開2018-141657(2018/09/13), 特許第6934239号(2021/08/25)}
}