@article{CTT100779215,
  author = {Rongbin Wang and Takayoshi Katase and Ke-Ke Fu and Tianshu Zhai and Jiacheng Yang and Qiankun Wang and Hiromichi Ohta and Norbert Koch and Steffen Duhm},
  title = {Oxygen vacancies allow tuning the work function of vanadium dioxide},
  journal = {Adv. Mater. Interfaces},
  year = 2018,
}

@article{CTT100795943,
  author = {Keisuke Ide and Yuki Futakado and Naoto Watanabe and Junghwan Kim and Takayoshi Katase and Hidenori Hiramatsu and Hideo Hosono and Toshio Kamiya},
  title = {Transition metal-doped amorphous oxide semiconductor thin film phosphor, chromium-doped amorphous gallium oxide},
  journal = {Phys. Status Solidi A},
  year = 2018,
}

@article{CTT100779232,
  author = {Ryota Sogabe and Yosuke Goto and Atsuhiro Nishida and Takayoshi Katase and Yoshikazu Mizuguchi},
  title = {Superconductivity in La1-xCexOBiSSe: Carrier doping by mixed valence of Ce ions},
  journal = {Euro. Phys. Lett.},
  year = 2018,
}

@article{CTT100779297,
  author = {Keisuke Nakamura and Tomoya Oshikiri and Kosei Ueno and Takayoshi Katase and Hiromichi Ohta and Hiroaki Misawa},
  title = {Plasmon-assisted polarity switching of a photoelectric conversion device by UV and visible light irradiation},
  journal = {J. Phys. Chem. C},
  year = 2018,
}

@article{CTT100779367,
  author = {Ke-Ke Fu and Rong-Bin Wang and Takayoshi Katase and Hiromichi Ohta and Norbert Koch and Steffen Duhm},
  title = {Stoichiometric and Oxygen-Deficient VO2 as Versatile Hole Injection Electrode for Organic Semiconductors},
  journal = {ACS Appl. Mater. Interfaces},
  year = 2018,
}

@article{CTT100760745,
  author = {Keisuke Ide and * Kyohei Ishikawa and Haochun Tang and Takayoshi Katase and Hidenori Hiramatsu and Hideya Kumomi and Hideo Hosono and Toshio Kamiya},
  title = {Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In‐Ga‐Zn‐O: Ultralow Optimum Oxygen Supply and Bandgap Widening},
  journal = {physica status solidi (a)},
  year = 2018,
}

@article{CTT100759484,
  author = {Amit Khare and Jaekwang Lee and Jaesoung Park and Gi-Yeop Kim and Si-Young Choi and Takayoshi Katase and Seulki Roh and Tae Sup Yoo and Jungseek Hwang and Hiromichi Ohta and Junwoo Son and Woo Seok Choi},
  title = {Directing Oxygen Vacancy Channel in SrFeO2.5 Epitaxial Thin Films},
  journal = {ACS Appl. Mater. Interfaces},
  year = 2018,
}

@inproceedings{CTT100779484,
  author = {笠井悠莉華 and 井手啓介 and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {超ワイドバンドギャップアモルファス酸化物半導体a-Ga-Oを用いたショットキーダイオードの作製},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779483,
  author = {井手啓介 and 二角勇毅 and 渡邉脩人 and 金正煥 and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {Cr添加アモルファス酸化ガリウム薄膜のフォトルミネッセンス特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779492,
  author = {ホシンイ and シャオチーウェン and 片瀬貴義 and 井手啓介 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {第一原理計算による層状 (AE = Ca, Sr, Ba)の電子構造と欠陥生成・キャリアドーピング機構の理論解析},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779491,
  author = {樋口雄飛 and 井手啓介 and Christian A. Niedermeier and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {エピタキシャル歪により増強されるLaNiO3極薄膜のフォノンドラッグ熱電特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779489,
  author = {山本千紘 and 半沢幸太 and 井手啓介 and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫:},
  title = {FeSb2薄膜のヘテロエピタキシャル成長と熱電特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779488,
  author = {渡邊脩人 and 井手啓介 and 片瀬貴義 and 笹瀬雅人 and 戸田喜丈 and 金正煥 and 上田茂典 and 堀場弘司 and 組頭広志 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {アモルファス酸化物半導体をホストとする蛍光体を用いた直流駆動型発光素子の室温形成},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779494,
  author = {松尾健志 and 井手啓介 and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {ガラス上に成長させた層状セレン化スズ薄膜の電気特性と薄膜トランジスタ},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779487,
  author = {森大介 and 渡邊脩人 and 井手啓介 and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {層状半導体Sr2CuMO3S(M= Ga, In)の合成と光電子物性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779486,
  author = {西間木祐紀 and 井手啓介 and 渡邊脩人 and 金正煥 and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {希土類添加アモルファス酸化物半導体の電気物性とトランジスタ特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100753180,
  author = {片瀬貴義},
  title = {遷移金属酸化物の原子層成長と機能物性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100792718,
  author = {Yasuo Azuma and Yusaku Kobayashi and Keisuke Ide and Takayoshi Katase and Toshio Kamiya},
  title = {Electrical characteristics of microfabricatd ferromagneticl material La0.67Sr0.33MnO3},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779479,
  author = {K. Ide and K. Takenaka and Y. Setsuhara and A. Hiraiwa and H. Kawarada and T. Katase and H. Hiramatsu and H. Hosono and T. Kamiya},
  title = {Effects of base pressure on optoelectronic properties of amorphous In–Ga–Zn–O},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779482,
  author = {T. Kamiya and K. Ide and K. Takenaka and Y. Setsuhara and A. Hiraiwa and H. Kawarada and T. Katase and H. Hiramatsu and H. Hosono},
  title = {Device characteristics of rare-earth doped amorphous oxide semiconductors},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779477,
  author = {Keisuke Ide and Masato Ota and Takayoshi Katase and Hidenori Hiramatsu and Shigenori Ueda and Hideo Hosono and Toshio Kamiya},
  title = {Depth Analysis of Near Valence Band Mximum Defect States in Amorphous Oxide Semiconductors: In-Ga-Zn-O},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779478,
  author = {T. Katase and K. Ide and H. Hiramatsu and H. Hosono and T. Kamiya},
  title = {Electric double layer transistor and electron-transport properties of (Tl,K)2Fe4Se5 thin films},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779495,
  author = {平松秀典 and 半沢幸太 and 佐藤 光 and 片瀬貴義 and 神谷利夫 and 細野秀雄},
  title = {鉄系超伝導体の薄膜成長とデバイス作製},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100760845,
  author = {片瀬貴義},
  title = {遷移金属酸化物歪界面で発現する特異な熱電能},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100760848,
  author = {Rongbin Wang and Keke Fu and Takayoshi Katase and Hiromichi Ohta and Steffen Duhm and Norbert Koch},
  title = {Vanadium dioxide as high work function electrode},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100760846,
  author = {井手 啓介 and 太田 雅人 and 岸田 陽介 and 片瀬 貴義 and 平松 秀典 and 上田 茂典 and 雲見 日出也 and 細野 秀雄 and 神谷 利夫},
  title = {[講演奨励賞受賞記念講演] 全反射硬X線光電子分光法によるアモルファス酸化物半導体の価電子帯直上欠陥の深さ方向分布},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779496,
  author = {小山田達郎 and 太田裕道 and 山ノ内路彦 and 小山田達郎 and 片瀬貴義 and 太田裕道 and 山ノ内路彦},
  title = {La0.67Sr0.33MnO3/SrTiO3ホールバー構造における電流誘起有効磁場の膜厚・チャネル方向依存性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100779497,
  author = {二角勇毅 and 渡邉脩人 and 井手啓介 and 金正煥 and 片瀬貴義 and 平松秀典 and 細野秀雄 and 神谷利夫},
  title = {遷移金属元素を発光中心としたアモルファス酸化物半導体蛍光体薄膜の探索},
  booktitle = {},
  year = 2018,
}