@article{CTT100782443,
  author = {K. Matsuura and J. Shimizu and M. Toyama and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration},
  journal = {IEEE Journal of the Electron Devices Society},
  year = 2018,
}

@article{CTT100813953,
  author = {Eisuke Anju and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout},
  journal = {Journal of the Electron Devices Society (J-EDS)},
  year = 2018,
}

@article{CTT100795209,
  author = {J. Shimizu and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and N. Ikarashi and H. Wakabayashi and N. Ikarashi},
  title = {Low-Temperature MoS2 Film Formation using Sputtering and H2S Annealing},
  journal = {Journal of the Electron Devices Society},
  year = 2018,
}

@article{CTT100780938,
  author = {M. Toyama and T. Ohashi and K. Matsuura and J. Shimizu and I. Muneta and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Ohmic Contact between Titanium and Sputtered MoS2 Films achieved by Forming-Gas Annealing},
  journal = {JPN J APPL PHYS},
  year = 2018,
}

@article{CTT100780937,
  author = {N. Hayakawa and Iriya Muneta and Takumi Ohashi and Kenntarou Matsuura and Junnichi Shimizu and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and Hitoshi Wakabayashi},
  title = {Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control},
  journal = {Japan Journal of Applied Physics},
  year = 2018,
}

@article{CTT100780936,
  author = {K. Matsuura and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Low-Carrier-Density Sputter-MoS2 Film by Vapor-Phase Sulfurization},
  journal = {Journal of Electrical Materials},
  year = 2018,
}

@inproceedings{CTT100792973,
  author = {Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Magnetic property in sputtered MoS2 thin film on growth temperature},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100795211,
  author = {T. Sakamoto and T. Ohashi and K. Matsuura and I. Muneta and K. Kakushima and K. Tsutsui and Y. Suzuki and N. Ikarashi and H. Wakabayashi},
  title = {Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100795212,
  author = {M. Hamada and K. Matsuura and T. Sakamoto and H. Tanigawa and T. Ohashi and I. Muneta and T. Hoshii and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816742,
  author = {谷川 晴紀 and 松浦 賢太朗 and 濱田 昌也 and 坂本 拓朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816744,
  author = {松浦 賢太朗 and 清水 淳一 and 外山 真矢人 and 大橋 匠 and 宗田 伊理也 and 石原 聖也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100792974,
  author = {Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Growth temperature dependence of magnetic property of sputtered MoS2 thin film},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813968,
  author = {Kazuya Hisatsune and Yoshihisa Takaku and Kohei Sasa and Takuya Hoshii and Iriya Muneta and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Charge and Discharge Characteristics of On-chip CeOx Electric Double Layer Decoupling Capacitors},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816732,
  author = {久恒 和也 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {CeOxを挿入したMIMキャパシタの静電容量の過渡応答特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816737,
  author = {岩塚 春樹 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {Siを導入したHfO2のMIMキャパシタの容量特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816738,
  author = {佐々 康平 and 久恒 和也 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {酸化セリウムを挿入したMIMキャパシタの充放電特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816739,
  author = {佐々木 杏民 and 星井 拓也 and 宗田 伊理也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {n型SiCのエピタキシャル層の正孔ライフタイムがpnダイオード特性に与える影響},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816740,
  author = {五十嵐 智 and 松浦 賢太朗 and 濱田 昌也 and 谷川 晴紀 and 坂本 拓朗 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813965,
  author = {Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Masahiro Watanabe and Naoyuki Shigyo and Takuya Saraya and Toshihiko Takakura and Kazuo Itou and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Iriya Muneta and Hitoshi Wakabayashi and Sinichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100814262,
  author = {I. Muneta and Danial B. Z. and N. Hayakawa and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Magnetic Force Microscopy Image Measured on MoS2 Thin Film Sputtered on CaF2 (111) Substrate},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813959,
  author = {K. Kakushima and T. Hoshii and M. Watanabe and N. Shigyo and K. Furukawa and T. Saraya and T. Takakura and K. Itou and M. Fukui and S. Suzuki and K. Takeuchi and I. Muneta and H. Wakabayashi and Y. Numasawa and A. Ogura and S. Nishizawa and K. Tsutsui and T. Hiramoto and H. Ohashi and H. Iwai},
  title = {New methodology for evaluating minority carrier lifetime for process assessment},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813957,
  author = {C. Y. Su and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
  title = {Interface State Density of Atomic Layer Deposited Al2O3 on Beta-Ga2O3},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813958,
  author = {D. Saito and I. Muneta and T. Hoshii and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
  title = {Reliability of SiC Schottky Diodes with Mo2C Electrode},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813956,
  author = {H. Kataoka and H. Iwai and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima},
  title = {A Defect Density Profile Extraction Method for GaN Epi-Wafers},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904007,
  author = {安重 英祐 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {ソース/ドレイン逆凹型コンタクト構造による横型積層シリコンナノワイヤFETにおける自己発熱効果の緩和},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100818000,
  author = {K. Matsuura and J. Shimizu and M. Toyama and T. Ohashi and I. Muneta and S. Ishihara and K. Kakushima and K. Tsutsui and A. Ogura and H. Wakabayashi},
  title = {Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate},
  booktitle = {2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings},
  year = 2018,
}

@inproceedings{CTT100830066,
  author = {Eisuke Anju and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Heating-Effect-Free p/n-Stacked-NW on Bulk-FinFETs and 6T-SRAM Layout},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100830068,
  author = {Suguru Tatsunokuchi and I. Muneta and T. Hoshii and H. Wakabayashi and K. Tsutsui and HIROSHI IWAI and K. Kakushima},
  title = {Photovoltaic Properties of Lateral Ultra-Thin Si p-i-n structure},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904000,
  author = {宗田 伊理也},
  title = {[第9回シリコンテクノロジー分科会研究奨励賞受賞記念講演] Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904002,
  author = {Chen-Yi Su and Takuya Hoshii and Iriya Muneta and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Kuniyuki Kakushima},
  title = {Initial trap and hysteresis analysis of Atomic Layer Deposited Al2O3 on b-Ga2O3},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904004,
  author = {大橋 匠 and 坂本 拓朗 and 松浦 賢太朗 and 清水 淳一 and 外山 真矢人 and 石原 聖也 and 日比野 祐介 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {Migration制御したスパッタリング法による2次元層状MoS2成膜},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904005,
  author = {坂本 拓朗 and 大橋 匠 and 松浦 賢太朗 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904006,
  author = {Zulkornain Bin Danial and 宗田 伊理也 and 早川 直希 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {Sputtered MoS2 Thin Film Formation on CaF2 (111) Substrate},
  booktitle = {},
  year = 2018,
}