@article{CTT100813951,
  author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film using UHV RF Magnetron Sputtering and Sulfurization},
  journal = {Journal of the Electron Devices Society (J-EDS)},
  year = 2019,
}

@article{CTT100813952,
  author = {Kazunori Matsuda and Hiroki Uyama and Kazuo Tsutsui},
  title = {Nonlinear Piezoresistance Coefficients of Semiconductors},
  journal = {Journal of Applied Physics},
  year = 2019,
}

@article{CTT100808596,
  author = {Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing},
  journal = {Applied Physics Letters},
  year = 2019,
}

@article{CTT100828638,
  author = {Kuan Ning Huang and Yueh-Chin Lin and Jia Ching Lin and Chia Chieh Hsu and Jin Hwa Lee and Chia-Hsun Wu and Jing Neng Yao and Heng-Tung Hsu and Venkatesan Nagarajan and Kuniyuki Kakushima and Kazuo Tsutsui and Hiroshi Iwai and Edward Yi Chang and Chao Hsin Chien},
  title = {Study of E-mode AlGaN/GaN MIS-HEMT with La-silicate gate insulator for power applications},
  journal = {Journal of Electronic Materials},
  year = 2019,
}

@article{CTT100809862,
  author = {Takuya Hoshii and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI},
  title = {Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates},
  journal = {Japanese Journal of Applied Physics},
  year = 2019,
}

@inproceedings{CTT100813992,
  author = {Takuya Hamada and Shinpei Yamaguchi and Taiga Horiguchi and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Comparative and Systematic Study of Doping Technology for 2D -Sputtered SputteredSputtered MoS 2 Film},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813991,
  author = {K. Tsutsui and K. Natori and T. Ogawa and T. Muro and T. Matsuishita and Y. Morikawa and T. Hoshii and K. Kakushima and H. Wakabayashi and K. Hayashi and F. Matsui and T. Kinoshita},
  title = {Analyses of 3D Atomic Arrangements of Dopants in Si Crystal Using Spectro-photoelectron Holography},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813986,
  author = {H. Tanigawa and K. Matsuura and I. Muneta and T. Hoshii and K. Kakushima and K. Tsutsui and H. Wakabayashi},
  title = {Positive Threshold Voltage in Accumulation Capacitance of TiN-Top-Gate/High-k/Sputtered-MoS2 Stacks},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813987,
  author = {Jinhan Song and A. Ohta and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Electrical Characteristics of Atomic Layer Deposited Y-silicate Devices},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813988,
  author = {Y. W. Lin and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Pulse deposition of Y2O3 films by Y(iPrCp)3 assisted by Ar boost technology},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813989,
  author = {Takuya Hoshii and Hiromasa Okita and Taihei Matsuhashi and Indraneel Sanyal and Yu-Chih Chen and Ying-Hao Ju and Akira Nakajima and Kuniyuki Kakushima and Hitoshi Wakabayashi and Jen-Inn Chyi and Kazuo Tsutsui},
  title = {Evaluation of Interfacial Charges at GaN/AlGaN Interfaces Grown by MOVPE},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813990,
  author = {Kazuo Tsutsui and Tomohiro Matsushita and Takayuki Muro and Yoshitada Morikawa and Kotaro Natori and Takuya Hoshii and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kouichi Hayashi and Fumihiko Matsui and Toyohiko Kinoshita},
  title = {3D Atomic Imaging of As Doped in Si by Spectro-Photoelectron Holography},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813985,
  author = {T. Kinoshita and T. Matsushita and T. Muro and T. Ohkochi and H. Osawa and K. Hayashi and F. Matsui and K.Tsutsui and K. Natori and Y. Morikawa and T. Hoshii and K. Kakushima and H. Wakabayashi and A. Takeda and K. Terashima and W. Hosoda and T. Fukura and Y. Yano and H. Fujiwara and M. Sunagawa and H. Kato and T. Oguchi and T. Wakita and Y. Muraoka and T. Yokoya},
  title = {Status of Photoelectron Holography at SPring-8: Experimental Setup for Time- and Space-Resolved Technique and Application to Individual Atomic Imaging of Multiple Dopant Sites},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100833081,
  author = {渡辺正裕 and 執行直之 and 星井拓也 and 古川和由 and 角嶋邦之 and 佐藤克己 and 末代知子 and 更屋拓哉 and 高倉俊彦 and 伊藤一夫 and 福井宗利 and 鈴木慎一 and 竹内 潔 and 宗田伊里也 and 若林 整 and 中島 昭 and 西澤伸一 and 筒井一生 and 平本俊郎 and 大橋弘通 and 岩井洋},
  title = {トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション},
  booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2019,
}

@inproceedings{CTT100813981,
  author = {T. Hiramoto and T. Saraya and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and M. Tsukuda and Y. Numasawa and K. Satoh and T. Matsudai and W. Saito and K. Kakushima and T. Hoshii and K. Furukawa and M. Watanabe and N. Shigyo and H. Wakabayashi and K. Tsutsui and H. Iwai and A. Ogura and S. Nishizawa and I. Omura and H. Ohash},
  title = {Switching of 3300V Scaled IGBT by 5V Gate Drive},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829206,
  author = {Yuki Kanazawa and Yohei Fukumoto and Syouichi Uechi and Kenji Ohoyama and Naohisa Happo and Masahide Harada and Kenichi Oikawa and Yasuhiro Inamura and Kazuo Tsutsui and Kouichi Hayashi},
  title = {Quantitative investigation of local structure of heavy doped Si by neutron atomic resolution holography},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829169,
  author = {山岸 朋彦 and 堀 敦 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {横型p/n積層ナノワイヤによるNORとNANDセルの省面積設計},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829171,
  author = {太田 惇丈 and 宋 禛漢 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {原子層堆積法を用いたイットリウムシリケート薄膜の形成},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829172,
  author = {西田 宗史 and 星井 拓也 and 片岡 寛明 and 筒井 一生 and 角嶋 邦之 and 若林 整},
  title = {ステップ電圧印加時の過渡電流測定によるGaN中のトラップ密度評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829173,
  author = {宮田 篤希 and 齋藤 大樹 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {4H-SiCエピタキシャル層によるX線検出に関する検討},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829174,
  author = {神林 郁哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {Si(111)基板上GaNのためのMgF2バッファの検討},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829175,
  author = {蔡 松霖 and 草深 一樹 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {スパッタリングを用いたAlScN膜の形成},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829202,
  author = {沖田 寛昌 and 星井 拓也 and 松橋 泰平 and Sanyal Indraneel and Chen Yu-Chih and Ju Ying-Hao and 中島 昭 and 西澤 伸一 and 大橋 弘通 and 角嶋 邦之 and 若林 整 and Chyi Jen-Inn and 筒井 一生},
  title = {TEGを用いたAlGaN/GaNヘテロ成長の2DEG側界面電荷への影響},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829201,
  author = {濱田 拓也 and 堀口 大河 and 辰巳 哲也 and 冨谷 茂隆 and 濱田 昌也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜のCl2プラズマ処理によるシート抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829200,
  author = {井上 毅哉 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の研究},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829184,
  author = {向井 勇人 and 髙山 研 and 濱田 拓也 and 高橋 言緒 and 井手 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {選択成長法を用いたGaN FinFETの作製},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829183,
  author = {高山 研 and 向井 勇人 and 濱田 拓也 and 高橋 言緒 and 井手 利英 and 清水 三総 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {GaN Fin構造選択成長における低抵抗領域の発生原因の検討},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813980,
  author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813982,
  author = {Tomohiko Yamagishi and Atsushi Hori and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813983,
  author = {T. Saraya and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and K. Kakushima and T. Hoshii and K. Tsutsui and H. Iwai and S. Nshizawa and I. Omura and T. Hiramoto},
  title = {Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829182,
  author = {松橋 泰平 and 星井 拓也 and 沖田 寛昌 and Indraneel Sanyal and Yu-Chih Chen and Ying-Hao Ju and 中島 昭 and 角嶋 邦之 and 若林 整 and Jen-Inn Chyi and 筒井 一生},
  title = {TEGを用いたGaN/AlGaNヘテロ成長の2DHG側界面電荷への影響},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829168,
  author = {宋 ジンハン and 太田 惇丈 and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {Y2O3/SiO2積層構造の絶縁膜を用いたMOS capacitorの特性評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829170,
  author = {草深 一樹 and Sunglin Tsai and 星井 拓也 and 若林 整 and 筒井 一生 and 角嶋 邦之},
  title = {スパッタリングによって形成したAlScN膜のリーク電流の評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829181,
  author = {今井 慎也 and 濱田 昌也 and 五十嵐 智 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {硫化プロセスにおけるスパッタMoS2膜質向上の重要性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829180,
  author = {五十嵐 智 and 望月 祐輔 and 谷川 晴紀 and 濱田 昌也 and 松浦 賢太朗 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜とTiSi2膜の界面におけるFGアニールによるコンタクト抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829179,
  author = {谷川 晴紀 and 松浦 賢太朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {正の閾値電圧のMetal-Top-Gate/High-k/スパッタMoS2の蓄積容量特性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829178,
  author = {木村 安希 and 久永 真之佑 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {部分的に薄層化したAlGaN 層によるAlGaN/GaN コンタクト抵抗低減効果の薄層領域パターン依存性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829177,
  author = {堀口 大河 and 濱田 拓也 and 辰巳 哲也 and 冨谷 茂隆 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜のSF6プラズマ処理によるシート抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100829176,
  author = {濱田 昌也 and 松浦 賢太朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタ法と硫黄雰囲気アニールで成膜した高いホール効果移動度を持つ層状ZrS2膜},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100804206,
  author = {Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Edge induced ferromagnetism in sputtered MoS2 film controlled by annealing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100811298,
  author = {更屋 拓哉 and 伊藤 一夫 and 高倉 俊彦 and 福井 宗利 and 鈴木 慎一 and 竹内 潔 and 附田 正則 and 沼沢 陽一郎 and 佐藤 克己 and 末代 知子 and 齋藤 渉 and 角嶋邦之 and 星井 拓也 and 古川 和由 and 渡辺正裕 and 執行 直之 and 筒井一生 and 岩井洋 and 小椋 厚志 and 西澤 伸一 and 大村 一郎 and 大橋 弘通 and 平本 俊郎},
  title = {5Vゲート駆動1200V級スケーリングIGBTの動作実証とスイッチング損失の低減 (シリコン材料・デバイス)},
  booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2019,
}

@inproceedings{CTT100813979,
  author = {Takuya Hoshii and Akira Nakajima and Shin-ichi Nishizawa and Hiromichi Ohashi and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {Quantitative evaluation of interfacial charges at GaN/AlGaN interfaces},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100822935,
  author = {星井 拓也 and 中島 昭 and 西澤 伸一 and 大橋 弘通 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {分極接合基板におけるAlGaN/GaNヘテロ界面の欠陥電荷評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100809866,
  author = {筒井一生 and 松下 智裕 and 名取 鼓太郞 and 小川 達博 and 室 隆桂之 and 森川 良忠 and 星井 拓也 and 角嶋邦之 and 若林整 and 林 好一 and 松井 文彦 and 木下 豊彦},
  title = {光電子ホログラフィー法によるシリコン中に高濃度ドープされた活性および不活性な不純物原子の三次元原子配列構造の観測},
  booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2019,
}

@inproceedings{CTT100813977,
  author = {Tomohiro Matsushita and Takayuki Muro and Kazuo Tsutsui and Takayoshi Yokoya},
  title = {Three-dimensional dopant imaging in semiconductor crystals using photoelectron holography with chemical state identification},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813978,
  author = {K. Matsuura and M. Hamada and T. Hamada and H. Tanigawa and T. Sakamoto and W. Cao and K. Parto and A. Hori and I. Muneta and T. Kawanago and K. Kakushima and K. Tsutsui and A. Ogura and K. Banerjee and H. Wakabayashi},
  title = {Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814076,
  author = {Iriya Muneta and Naoki Hayakawa and Takanori Shirokura and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Ferromagnetic tunnel devices with two-dimensional layered material MoS2},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813984,
  author = {M. Fukui and T. Saraya and K. Itou and T. Takakura and S. Suzuki and K. Takeuchi and K. Kakushima and T. Hoshii and K. Tsutsui and H. Iwai and S. Nishizawa and I. Omura and T. Hiramoto},
  title = {Turn-Off Loss Improvement by IGBT Scaling},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813976,
  author = {K. Sasaki and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
  title = {Minority Carrier Lifetime Extraction Methodology of SiC Epitaxial Layer},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813975,
  author = {K. Hisatsune and T. Hoshii and I. Muneta and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Thickness Effects on Charge and Discharge Characteristics of CeOx MIM Capacitors},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813974,
  author = {J. Molina and H. Iwatsuka and T. Hoshii and S. Ohmi and H. Funakubo and A. Hori and I. Fujiwara and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813972,
  author = {Masahiro Watanabe and Naoyuki Shigyo and Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Katsumi Satoh and Tomoko Matsudai and Takuya Saraya and Toshihiro Takakura and Kazuo Itou and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Iriya Muneta and Hitoshi Wakabayashi and Akira Nakajima and Shin-ichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813973,
  author = {Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Masanori Tsukuda and Yohichiroh Numasawa and Katsumi Satoh and Tomoko Matsudai and Wataru Saito and Kuniyuki Kakushima and Takuya Hoshii and Kazuyoshi Furukawa and Masahiro Watanabe and Naoyuki Shigyo and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Shin-Ichi Nishizawa and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramo},
  title = {3300V Scaled IGBTs Driven by 5V Gate Voltag},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813970,
  author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816749,
  author = {松浦 賢太朗 and 濱田 昌也 and 坂本 拓朗 and 谷川 晴紀 and 宗田 伊理也 and 石原 聖也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816748,
  author = {濱田 拓也 and 向井 勇人 and 高橋 言緒 and 井手 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 岩井 洋 and 筒井 一生},
  title = {FinFET応用に向けた選択成長GaNチャネルの電気特性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816747,
  author = {筒井 一生 and 松下 智裕 and 名取 鼓太郞 and 室 隆桂之 and 森川 良忠 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 林 好一 and 松井 文彦 and 木下 豊彦},
  title = {光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813971,
  author = {Takeya Inoue and Takuya Hoshii and Takuo Kikuchi and Hidehiko Yabuhara and Kazuyuki Ito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Junichi Tonotani and Kazuo Tsutsui},
  title = {Fundamental study on reducing on-resistance by introducing strain  into silicon vertical power devices},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816750,
  author = {筒井 一生 and 松下 智裕 and 名取 鼓太郞 and 小川 達博 and 室 隆桂之 and 森川 良忠 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 林 好一 and 松井 文彦 and 木下 豊彦},
  title = {光電子ホログラフィーによる半導体中の不純物の3Ｄ原子イメージング},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816745,
  author = {筒井一生 and 松下智裕 and 室隆桂之 and 森川良忠 and 名取鼓太郎 and 小川達博 and 星井拓也 and 角嶋邦之 and 若林整 and 林好一 and 松井文彦 and 木下豊彦},
  title = {光電子ホログラフィー法によるシリコン中にドープされた不純物の三次元原子配列構造の解析},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816746,
  author = {松浦賢太朗 and 清水淳一 and 外山真矢人 and 大橋匠 and 坂本拓朗 and 宗田伊理也 and 石原聖也 and 角嶋邦之 and 筒井一生 and 小椋厚志 and 若林整},
  title = {大面積集積化に向けたスパッタ二次元半導体 MoS2 薄膜のTop-gate nMISFETs チャネル応用},
  booktitle = {},
  year = 2019,
}