@article{CTT100855585,
  author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Haruki Tanigawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2020,
}

@article{CTT100855454,
  author = {Kentaro Matsuura and Masaya Hamada and Takuya Hamada and Haruki Tanigawa and Takuro Sakamoto and Atsushi Hori and Iriya Muneta and Takamasa Kawanago and Kuniyuki Kakushima and Kazuo},
  title = {Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2020,
}

@article{CTT100822931,
  author = {Kiyoshi Takeuchi and Munetoshi Fukui and Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Shinichi Suzuki and Yohichiroh Numasawa and Naoyuki Shigyo and Kuniyuki Kakushima and Takuya Hoshii and Kazuyoshi Furukawa and Masahiro Watanabe and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Wataru Saito and Shin-ichi Nishizawa and Masanori Tsukuda and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramoto},
  title = {Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs},
  journal = {IEEE Trans. On Semiconductor Manufactureing},
  year = 2020,
}

@article{CTT100828639,
  author = {Haruki Tanigawa and Kentaro Matsuura and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Enhancement-Mode Accumulation Capacitance-Voltage Characteristics in TiN/ALD-Al2O3/Sputtered-MoS2 Top-Gated Stacks},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2020,
}

@article{CTT100828640,
  author = {Jinan Song and Lyu Wei Lin and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Atomic Layer Deposition of Y2O3 Thin Films with a High Growth per Cycle by Ar Multiple Boost Injection},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2020,
}

@article{CTT100822932,
  author = {Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Kuniyuki Kakushima and Takuya Hoshii and Kazuo Tsutsui and Hiroshi Iwai and Shin-ichi Nishizawa and Ichiro Omura and Toshiro Hiramoto},
  title = {Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100822934,
  author = {Tomohiko Yamagishi and Atsushi Hori and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Heating-Aware Cell Design for p/n-Vertically-Integrated Nanowire on FinFET beyond 3-nm Technology Node},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100822933,
  author = {Joel Molina-Reyes and Takuya Hoshii and Shun-Ichiro Ohmi and Hiroshi Funakubo and Atsushi Hori and Ichiro Fujiwara and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100822929,
  author = {Kazuo Tsutsui and Yoshitada Morikawa},
  title = {Analyses of three-dimensional atomic arrangements of impurities doped in Si relating to electrical activity by spectro-photoelectron holography},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@inproceedings{CTT100855930,
  author = {Takuya Saraya and Kazuo Ito and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Masanori Tsukuda and Katsumi Satoh and Tomoko Matsudai and Kuniyuki Kakushima and Takuya Hoshii and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Wataru Saito and Shin-ichi Nishizawa and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramoto},
  title = {3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855929,
  author = {H. Nishida and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {A simulation study on the transient leakage current analysis of a GaN epitaxial layer},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855924,
  author = {S. Tsai and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Highly Oriented Growth of AlxSc1-xN Ferroelectric Film on W Bottom Electrodes},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855927,
  author = {A. Miyata and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Photocurrent measurements of AlGaN/GaN HEMT under X-ray irradiation},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855926,
  author = {"Kazuto Mizutani and Yu-Wei Lin and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima"},
  title = {Observation of wake-up effect on ferroelectric Y:HfO2 thickness scaling},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855925,
  author = {Y.-W. Lin and K. Mizutani and T. Hoshii and H. Wakabayashi and K. Tsutsui and Y.-F. Tsao and T.-J. Huang and H.-T. Hsu and K. Kakushima},
  title = {Ferroelectric HfO2 Capacitors for Varctor Application in GHz},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855928,
  author = {"Atsuhiro Ohta and J. Song and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima"},
  title = {Electrical Characteristics of Atomic Layer Deposited Y-silicate Dielectrics},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855937,
  author = {Shinya Imai and Takuya Hamada and Masaya Hamada and Takanori Shirokura and Shigetaka Tomiya and Iriya Muneta and Kuniyuki Kakushima and Tetsuya Tatsumi and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848904,
  author = {久恒 悠介 and 金 相佑 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {横型GaN FinFETの構造最適化についての検討},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848908,
  author = {高山 研 and 太田 貴士 and 佐々木 満孝 and 向井 勇人 and 濱田 拓也 and 高橋 言雄 and 井出 利英 and 清水 三聡 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848911,
  author = {筒井 一生 and 松橋 泰平 and 星井 拓也 and 角嶋 邦之 and 若林 整 and 永山 勉 and 樋口 隆弘 and 加藤 慎一 and 谷村 英昭 and 室 隆桂之 and 松下 智裕 and 森川 良忠},
  title = {AsおよびBの共ドープによるSi中Asクラスターの特性制御},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848912,
  author = {門 龍翔 and 横川 凌 and 沼沢 陽一郎 and 筒井 一生 and 角嶋 邦之 and 小椋 厚志},
  title = {Si-IGBT作製プロセスにおける水素熱処理の影響},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848913,
  author = {木村 安希 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/(AlN)/GaN構造におけるキャリア移動度の温度依存性},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100848914,
  author = {松田 和典 and 生田 壮馬 and 中谷 友哉 and 長岡 史郎 and 筒井 一生},
  title = {Geのピエゾ抵抗効果（㈵）},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855932,
  author = {Masaya Hamada and Kentaro Matsuura and Takuya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855933,
  author = {Satoshi Igarashi and Yusuke Mochiduki and Haruki Tanigawa and Masaya Hamada and Kentaro Matsuura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Low Contact Resistance at Interface between Sputtered-MoS2 Film and TiSi2 Contact Treated by Higher-Temperature Forming-Gas Annealing},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100855934,
  author = {Sunglin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Thickness Scaling on Ferroelectric Al0.8Sc0.2N Films},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100829205,
  author = {松浦 賢太朗 and 濱田 昌也 and 濱田 拓也 and 谷川 晴紀 and 坂本 拓朗 and 堀 敦 and 宗田 伊理也 and 川那子 高暢 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100829203,
  author = {松橋 泰平 and 星井 拓也 and 沖田 寛昌 and 中島 昭 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {分極接合基板における2DEG枯渇電圧の解析的導出},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100829204,
  author = {木村 安希 and 星井 拓也 and 宮野 清孝 and 布上 真也 and 名古 肇 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/GaNヘテロ構造におけるキャリア輸送特性のAlNスペーサ層膜厚依存性},
  booktitle = {},
  year = 2020,
}