@article{CTT100875613,
  author = {Takuya Hamada and Masaya Hamada and Satoshi Igarashi and Taiga Horiguchi and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box},
  journal = {Journal of the Electron Devices Society (J-EDS)},
  year = 2021,
}

@article{CTT100855460,
  author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Yi Chang and Kuniyuki Kakushima},
  title = {On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100855475,
  author = {Jinhan Song and Atsuhiro Ohta and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2021,
}

@article{CTT100855459,
  author = {S-L. Tsai and T. Hoshii and H. Wakabayashi and K. Tsutsui and T-K. Chung and E. Chang and K. Kakushima},
  title = {Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering},
  journal = {Applied Physics Letters},
  year = 2021,
}

@article{CTT100855476,
  author = {Junji Kataoka and Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {A possible origin of the large leakage current in ferroelectric Al1-xScxN films},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2021,
}

@article{CTT100855464,
  author = {Shinya Imai and Takuya Hamada and Masaya Hamada and Takanori Shirokura and Iriya Muneta and Kuniyuki Kakushima and Tetsuya Tatsumi and Shigetaka Tomiya and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Importance of Crystallinity Improvement in MoS2 film just after MoS2-Compound Sputtering even followed by Post Sulfurization for Chip-Size Fabrication},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100855473,
  author = {Takuya Hamada and Shigetaka Tomiya and Tetsuya Tatsumi and Masaya Hamada and Taiga Horiguchi and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Sheet Resistance Reduction of MoS2 Film using Sputtering and Chlorine Plasma Treatment followed by Sulfur Vapor Annealing},
  journal = {Journal of the Electron Devices Society (J-EDS)},
  year = 2021,
}

@article{CTT100855471,
  author = {Masaya Hamada and Kentaro Matsuura and Takuya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100855467,
  author = {Satoshi Igarashi and Yusuke Mochiduki and Haruki Tanigawa and Masaya Hamada and Kentaro Matsuura and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Aligned-TiSi2 Bottom Contact with APM Cleaning and Post-annealing for Sputtered-MoS2 Film},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100855472,
  author = {Junji Kataoka and Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {N-type conduction of sputter-deposited polycrystalline Al0.78Sc0.22N films by Si ion implantation},
  journal = {Applied Physics Express (APEX)},
  year = 2021,
}

@inproceedings{CTT100877153,
  author = {Mitsuki Nishizawa and T. Hoshii and H. Wakabayashi and K. Tsutsui and I. Mizushima and T. Yoda and K. Kakushima},
  title = {Introduction of surface field-plate for accurate minority carrier lifetime estimation of 4H-SiC epitaxial layer},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877152,
  author = {Si-Meng Chen and Sung-Lin Tsai and Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877156,
  author = {Sho Sasaki and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {Observation of ferroelectricity in atomic layer deposited AlN film},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877155,
  author = {R. Shibukawa and S. -L. Tsai and T. Hoshii and H. Wakbayashi and K. Tsutsui and K. Kakushima},
  title = {Thermal stability of ferroelectric AlScN films},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877154,
  author = {Kazuto Mizutani and T. Hoshii and H. Wakabayashi and K. Tsutsui and K. Kakushima},
  title = {Recovery of ferroelectric property after endurance test by positive reset voltage application for CeOx-capped ferroelectric HfO2 films},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875832,
  author = {小森 勇太 and 木村 安希 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/AlN/GaN構造におけるキャリア散乱要因のAlN層厚依存性},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100902941,
  author = {Takamasa Kawanago and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd  Down to 0.5 V Consisting of WSe2  n/p FETs},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877149,
  author = {Ryo Ono and Shinya Imai and Yuta Kusama and Takuya Hamada and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Nobuyuki Ikarashi and Hitoshi Wakabayashi},
  title = {Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877147,
  author = {Takuya Hamada and Taiga Horiguchi and Masaya Hamada and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100875829,
  author = {小森 勇太 and 星井 拓也 and 宮野 清孝 and 津久井 雅之 and 水島 一郎 and 依田 孝 and 角嶋 邦之 and 若林 整 and 筒井 一生},
  title = {InAlN/AlN/GaN構造中2DEGにおける移動度のキャリア濃度依存性},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100877142,
  author = {Masaya Hamada and Takuya Hamada and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Side-Contact Architecture for p/n-Stacked-Nano-Sheet ZrS2 2D-FETs Beyond 1-nm Technology Node},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100861332,
  author = {Masahiro Watanabe and Naoyuki Shigyo and Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Katsumi Satoh and Tomoko Matsudai and Takuya Saraya and Iriya Muneta and Hitoshi Wakabayashi and Akira Nakajima and Shin-ichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices},
  booktitle = {Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)},
  year = 2021,
}

@inproceedings{CTT100848915,
  author = {筒井一生 and 濱田拓也 and 高山 研 and 金 相佑 and 星井拓也 and 角嶋邦之 and 若林 整 and 高橋言緒 and 井手利英 and 清水三聡},
  title = {選択成長法を用いたGaN 系FinFET},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100848916,
  author = {竹内走一郎 and 古賀峻丞 and 田中晶貴 and 孫澤旭 and 橋本由介 and 星井拓也 and 筒井一生 and 松下智裕},
  title = {AsおよびBを共ドープしたSi結晶中に存在するドーパントの構造解析},
  booktitle = {},
  year = 2021,
}

@misc{CTT100894462,
  author = {星井拓也 and 筒井一生},
  title = {ｐチャネルＧａＮＭＯＳデバイス及びその製造方法},
  howpublished = {公開特許},
  year = 2023,
  month  = {},
  note   = {特願2021-137005(2021/08/25), 特開2023-031488(2023/03/09)}
}