@article{CTT100905206, author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai}, title = {Integration of BiSb Topological Insulator and CoFeB/MgO With Perpendicular Magnetic Anisotropy Using an Oxide Interfacial Layer for Ultralow Power SOT-MRAM Cache Memory}, journal = {IEEE Transactions on Magnetics}, year = 2023, } @article{CTT100885313, author = {Ho Hoang Huy and Julian Sasaki and Nguyen Huynh Duy Khang and Pham Nam Hai and Q. LE and B. YORK and C. Hwang and X. LIU and M. GRIBELYUK and X. XU and S. LE and M. HO and H. TAKANO}, title = {Large inverse spin Hall effect in BiSb topological insulator for 4 Tb/in2 magnetic recording technology}, journal = {Applied Physics Letters}, year = 2023, } @inproceedings{CTT100905211, author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai}, title = {Large spin Hall effect in BiSb topological insulator/CrOx/CoFeB/MgO with perpendicular magnetic anisotropy for ultralow power SOT-MRAM}, booktitle = {}, year = 2023, } @inproceedings{CTT100900901, author = {Ho Hoang Huy and R. Zhang and T. Shirokura and S. Takahashi and Y. Hirayama and Pham Nam Hai}, title = {Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power SOT-MRAM cache memory}, booktitle = {}, year = 2023, } @inproceedings{CTT100900893, author = {B.R. York and Q. Le and X. Liu and S. Okamura and C. Hwang and M.A. Gribelyuk and S. Le and J. Liu and R. Simmons and M. Maeda and F. Tuo and Y. Tao and J. Ohno and H. Takano and P.N. Hai and H. H. Huy and S. Namba}, title = {(Invited) High Thermal Reliability and High Spin Hall Angle Observed in SOT-Reader Thin Films Using BiSbX Topological Insulators}, booktitle = {}, year = 2023, } @inproceedings{CTT100888691, author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai}, title = {Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power spin-orbit torque magnetic memory}, booktitle = {}, year = 2023, }