@article{CTT100911397,
  author = {Reika Ota and Shinnosuke Yasuoka and Ryoichi Mizutani and Takahisa Shiraishi and Kazuki Okamoto and Kuniyuki Kakushima and Tomoyuki Koganezawa and Osami Sakata and Hiroshi Funakubo},
  title = {Scalable ferroelectricity of 20-nm-thick (Al0.8Sc0.2)N thin films sandwiched between TiN electrodes},
  journal = {J. Appl. Phys.},
  year = 2023,
}

@article{CTT100896542,
  author = {Masaki Otomo and Masaya Hamada and Ryo Ono and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Chemical states of PVD-ZrS2 film underneath scaled high-k film with self-oxidized ZrO2 film as interfacial layer},
  journal = {Japanese Journal of Applied Physics},
  year = 2023,
}

@inproceedings{CTT100902988,
  author = {Ryosuke Kajikawa and Takamasa Kawanago and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-Aligned WOx S/D Contacts to Gate Stacks with TiOx Nucleation Layer by Multiple-Deposition Method in WSe2 pFETs},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100903419,
  author = {今井 慎也 and 梶川 亮介 and 川那子 高暢 and 宗田 伊理也 and 角嶋 邦之 and 辰巳 哲也 and 冨谷 茂隆 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜に対するエッジ金属コンタクトの電流電圧特性},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100903418,
  author = {梶川 亮介 and 川那子 高暢 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {トップゲートに自己整合したWOx S/Dを用いた30-50 nm膜厚WSe2バックチャネルpFET},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100903417,
  author = {寺岡 楓 and 今井 慎也 and 黒原 啓太 and 伊東 壮真 and 川那子 高暢 and 宗田 伊理也 and 角嶋 邦之 and 若林 整},
  title = {Ni/Al2O3/スパッタWS2コンタクトの電流電圧特性},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100886128,
  author = {Iriya Muneta and Takanori Shirokura and Pham Nam Hai and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulfide atomic layered structure},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100896555,
  author = {Peilong Wang and Atsushi Hori and Iriya Muneta and Takamasa Kawanago and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Self-heating and Short-Channel Effect Immunity with Partial-Bottom-Dielectric-Isolation for Gate-All-Around Nano-Sheet FETs},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100896554,
  author = {濱田 昌也 and 松浦 賢太朗 and 濱田 拓也 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100896541,
  author = {Ryo Ono and Shinya Imai and Takamasa Kawanago and Iriya Muneta and Kuniyuki Kakushima and Kazuo Tsutsui and Tetsuya Tatsumi and Shigetaka Tomiya and Hitoshi Wakabayashi},
  title = {Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100896540,
  author = {Shinya Imai and Ryo Ono and Iriya Muneta and Kuniyuki Kakushima and Tetsuya Tatsumi and Shigetaka Tomiya and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid},
  booktitle = {},
  year = 2023,
}