@book{CTT100891143,
  author = {PHAM NAM HAI},
  title = {トポロジカル絶縁体},
  publisher = {(株)エヌ・ティー・エス},
  year = 2023,
}

@article{CTT100907583,
  author = {Ken Ishida and Takanori Shirokura and Pham Nam Hai},
  title = {Enhanced spin Hall effect at high temperature in non-centrosymmetric silicide TaSi2 driven by Berry phase monopoles},
  journal = {Applied Physics Letters},
  year = 2023,
}

@article{CTT100892149,
  author = {Takanori Shirokura and Pham Nam Hai},
  title = {High temperature spin Hall effect in topological insulator},
  journal = {Applied Physics Letters},
  year = 2023,
}

@article{CTT100905206,
  author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai},
  title = {Integration of BiSb Topological Insulator and CoFeB/MgO With Perpendicular Magnetic Anisotropy Using an Oxide Interfacial Layer for Ultralow Power SOT-MRAM Cache Memory},
  journal = {IEEE Transactions on Magnetics},
  year = 2023,
}

@article{CTT100885526,
  author = {Shobhit Goel and Nguyen Huynh Duy Khang and Yuki Osada and Le Duc Anh and Pham Nam Hai and Masaaki Tanaka},
  title = {Room-temperature spin injection from a ferromagnetic semiconductor},
  journal = {Scientific Reports},
  year = 2023,
}

@article{CTT100885313,
  author = {Ho Hoang Huy and Julian Sasaki and Nguyen Huynh Duy Khang and Pham Nam Hai and Q. LE and B. YORK and C. Hwang and X. LIU and M. GRIBELYUK and X. XU and S. LE and M. HO and H. TAKANO},
  title = {Large inverse spin Hall effect in BiSb topological insulator for 4 Tb/in2 magnetic recording technology},
  journal = {Applied Physics Letters},
  year = 2023,
}

@inproceedings{CTT100905216,
  author = {Pham Nam Hai},
  title = {(Invited) Topological materials for advanced spintronic devices},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100908981,
  author = {Masaki Kobayashi and Nguyen H. D. Khang and Takahito Takeda and Kohsei Araki and Ryo Okano and Masahiro Suzuki and Kenta Kuroda and Koichiro Yaji and Katsuaki Sugawara and Seigo Souma and Kosuke Nakayama and Miho Kitamura and Koji Horiba and Atsushi Fujimor and Takafumi Sato and Shik Shin and Masaaki Tanaka and Pham Nam Hai},
  title = {Interface States between Topological Insulator Bi and Ferromagnet MnGa Observed by Angle-Resolved Photoemission Spectroscopy},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100906631,
  author = {西山 黎 and ファム ナム ハイ and 橋谷田 俊 and 河野 行雄},
  title = {トポロジカル絶縁体BiSbのテラヘルツ吸収特性},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100905211,
  author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai},
  title = {Large spin Hall effect in BiSb topological insulator/CrOx/CoFeB/MgO with perpendicular magnetic anisotropy for ultralow power SOT-MRAM},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100900896,
  author = {Kenta Takabayashi and Masaaki Tanaka and Pham Nam Hai},
  title = {Very high Curie temperature (530 K) in ferromagnetic semiconductor (Ga,Fe)Sb grown on vicinal GaAs(001) substrates},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100900901,
  author = {Ho Hoang Huy and R. Zhang and T. Shirokura and S. Takahashi and Y. Hirayama and Pham Nam Hai},
  title = {Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power SOT-MRAM cache memory},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100900900,
  author = {Sho Kagami and Takanori Shirokura and Pham Nam Hai},
  title = {Annealing temperature effects on spin orbit torque in YPtBi topological semimetal and perpendicularly magnetized Co/Pt multilayers},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100900897,
  author = {Takanori Shirokura and Pham Nam Hai},
  title = {Robust spin Hall effect in non-stoichiometric topological semimetal YPtBi thin films},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100900894,
  author = {Pham Nam Hai and Takanori Shirokura and Nguyen Huynh Duy Khang},
  title = {Suppression of magnetic domain wall shift error in 3D racetrack memory},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100908983,
  author = {Masaaki Tanaka and Le Duc Anh and Nguyen Thanh Tu and Shobhit Goel and Karumuri Sriharsha and Kosuke Takiguchi and Pham Nam Hai},
  title = {(Invited) A new class of Fe-doped III-V ferromagnetic semiconductors with high Curie temperature and their quantum heterostructures},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100900890,
  author = {Pham Nam Hai},
  title = {(Invited) Room-temperature spintronics using ferromagnetic semiconductor and topological insulator},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100900891,
  author = {Takanori Shirokura and Pham Nam Hai},
  title = {(Invited) Giant spin Hall effect in back-end-of-line compatible topological semimetal YPtBi},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100900892,
  author = {Sho Kagami and Takanori Shirokura and Pham Nam Hai},
  title = {Annealing temperature effects on spin orbit torque in YPtBi topological semimetal and Co/Pt perpendicular magnetization multilayers},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100901043,
  author = {Kenta Takabayashi and Masaaki Tanaka and Pham Nam Hai},
  title = {Ferromagnetic Semiconductor (Ga,Fe)Sb with Very High Curie Temperature (530 K) Grown on Vicinal GaAs(001) Substrates},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100900893,
  author = {B.R. York and Q. Le and X. Liu and S. Okamura and C. Hwang and M.A. Gribelyuk and S. Le and J. Liu and R. Simmons and M. Maeda and F. Tuo and Y. Tao and J. Ohno and H. Takano and P.N. Hai and H. H. Huy and S. Namba},
  title = {(Invited) High Thermal Reliability and High Spin Hall Angle Observed in SOT-Reader Thin Films Using BiSbX Topological Insulators},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100888691,
  author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai},
  title = {Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power spin-orbit torque magnetic memory},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100886128,
  author = {Iriya Muneta and Takanori Shirokura and Pham Nam Hai and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulfide atomic layered structure},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100886127,
  author = {Takanori Shirokura and Pham Nam Hai},
  title = {Generalized angle resolved second harmonic method for precise evaluation of spin orbit torque in strong perpendicular magnetic anisotropy system},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100886126,
  author = {Zhang Ruixian and Takanori Shirokura and Tuo Fan and Pham Nam Hai},
  title = {Fabrication and evaluation of fully sputtered topological insulator/perpendicularly magnetized CoFeB/MgO multilayers for SOT-MRAM application},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100885527,
  author = {白倉 孝典 and 脱 凡 and グエン フン ユイ カン and ファム ナム ハイ},
  title = {(Invited)ハーフホイスラー型トポロジカル半金属を用いた配線工程耐性を有する超高効率純スピン流源の開発},
  booktitle = {},
  year = 2023,
}

@misc{CTT100886129,
  author = {レデゥックアイン and グエンタントゥ and 瀧口耕介 and 小林正起 and ファムナムハイ and 田中雅明},
  title = {強磁性半導体ルネサンス －Fe添加III-V族強磁性半導体がもたらす新展開－},
  year = 2023,
}

@misc{CTT100894468,
  author = {PHAMNAM HAI and 白倉孝典 and 近藤　剛　},
  title = {スピン注入源、磁気メモリ、スピンホール発振器、計算機、及び磁気センサ},
  howpublished = {公開特許},
  year = 2023,
  month  = {},
  note   = {特願2021-141316(2021/08/31), 特開2023-034867(2023/03/13)}
}


@misc{CTT100843276,
  author = {PHAMNAM HAI and NGUYEN HUYNH DUY KHANG},
  title = {磁性体とＢｉＳｂの積層構造の製造方法、磁気抵抗メモリ、純スピン注入源},
  howpublished = {登録特許},
  year = 2023,
  month  = {},
  note   = {特願2019-542310(2018/09/14), 再表2019-054484(2020/10/15), 特許第7227614号(2023/02/14)}
}