@article{CTT100918360,
  author = {An Li and Takuya Hoshii and Kazuo Tsutsui and Hitoshi Wakabayashi and Kuniyuki Kakushima},
  title = {Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma},
  journal = {Japanese Journal of Applied Physics},
  year = 2024,
}

@article{CTT100918374,
  author = {Gen Nakada and Yoshiharu Kihara and Akira Yasui and Kuniyuki KAKUSHIMA and Hiroshi Nohira},
  title = {Estimation of the band alignment of metal/AlScN interfaces by hard X-ray photoelectron spectroscopy},
  journal = {Japanese Journal of Applied Physics},
  year = 2024,
}

@article{CTT100918393,
  author = {Tomoya Tsutsumi and Kazuki Goshima and Yoshiharu Kirihara and Tatsuki Okazaki and Akira Yasui and Mitani Yuichiro and Kuniyuki KAKUSHIMA and Hiroshi Nohira},
  title = {Effects of plasma oxidation and plasma nitridation on chemical bonding state of AlScN evaluated by AR-HAXPES},
  journal = {},
  year = 2024,
}

@article{CTT100918404,
  author = {Yukimura Tokita and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA},
  title = {Identification of compressive strain in thin ferroelectric Al1–xScxN films by Raman spectroscopy},
  journal = {Japanese Journal of Applied Physics},
  year = 2024,
}