発明者,発明の名称,種別,状態,出願人,出願日,出願番号,公開日,公開番号,登録日,登録番号
"岡本敏,角嶋邦之","金属窒化物、膜、積層体、素子、デバイス、膜の製造方法、磁気トンネル接合素子、及び、磁気デバイス","特許","公開","国立大学法人東京科学大学, 住友化学株式会社","2024/10/07","PCT/JP2024/035805","2025/04/17","WO 2025/079560",,
"岡本敏,角嶋邦之","金属窒化物、膜、積層体、素子、デバイス、膜の製造方法、磁気トンネル接合素子、及び、磁気デバイス","特許","公開","国立大学法人東京科学大学, 住友化学株式会社","2024/04/11","特願2024-064148","2025/04/23","特開2025-066629",,
"角嶋邦之,松下雄一郎,トラン  バ  フン,西谷　侑将","強磁性材料、薄膜及び強磁性材料の製造方法","特許","公開","国立大学法人東京科学大学","2024/02/09","特願2024-018903","2025/08/22","特開2025-123054",,
"角嶋邦之,舟窪浩,大見俊一郎,モリナ  レイエス，ジョエル,藤原　一郎,堀敦,清水荘雄,中村　美子,三村和仙","不揮発性記憶装置、不揮発性記憶素子及びその製造方法","特許","登録","国立大学法人東京科学大学","2020/12/04","特願2021-562758","2021/06/10","WO 2021/112247","特許第7699821号","2025/06/20"
"角嶋邦之,川那子高暢,宗清修,LEIYIMING,古橋　壮之,三浦　成久","半導体装置及びその製造方法","特許","登録","国立大学法人東京工業大学, 三菱電機株式会社","2014/08/28","特願2014-173714","2016/04/07","特開2016-048758","特許第6270667号","2018/01/12"
"角嶋邦之,Dou Chunmeng,AHMETPARHAT,岩井洋,片岡　好則","抵抗変化型記憶装置","特許","登録","国立大学法人東京工業大学, 東芝マテリアル株式会社","2013/03/12","特願2014-504932","2015/08/03","再表2013/137262","特許第6082383号","2017/01/27"
"AHMETPARHAT,マイマイティ マイマイティレシャティ,岩井洋,服部健雄,筒井一生,角嶋邦之","半導体素子","特許","公開","国立大学法人東京工業大学","2011/12/27","特願2011-285538","2013/07/08","特開2013-135135",,
"角嶋邦之,岩井洋,アヘメト パールハット,佐藤　創志,山田　啓作,大毛利　健治","ナノワイヤトランジスタ及びその製造方法","特許","公開","国立大学法人東京工業大学, 学校法人早稲田大学","2010/03/31","特願2010-079971","2011/10/20","特開2011-211126",,
"角嶋邦之,岩井洋,アヘメト パールハット,佐藤　創志,山田　啓作,大毛利　健治","ナノワイヤトランジスタ及びその製造方法","特許","公開","国立大学法人東京工業大学, 学校法人早稲田大学","2010/03/31","特願2010-079972","2011/10/20","特開2011-211127",,
"Parhat　AHMET,岩井洋,筒井一生,角嶋邦之,服部　健雄,知京　豊裕","半導体装置及びコンデンサ","特許","公開","国立大学法人東京工業大学, 独立行政法人 物質・材料研究機構","2007/03/06","特願2007-056151","2008/09/18","特開2008-218827",,
"岩井洋,筒井一生,Parhat　AHMET,角嶋邦之,松元　道一,奥野　泰利,久保田　正文,上田　誠二","半導体装置及びその製造方法","特許","公開","国立大学法人東京工業大学, 松下電器産業　株式会社","2006/05/30","特願2006-149763","2007/12/13","特開2007-324187",,