発明者,発明の名称,種別,状態,出願人,出願日,出願番号,公開日,公開番号,登録日,登録番号
"徳光永輔,原田　裕一　","グラフェンの改質方法","特許","登録","国立大学法人東京工業大学, 日本電信電話株式会社","2012/07/20","特願2012-161320","2014/02/03","特開2014-019622","特許第5783609号","2015/07/31"
"徳光永輔,原田　裕一","半導体装置の製造方法","特許","登録","国立大学法人東京工業大学, 日本電信電話株式会社","2012/07/20","特願2012-161322","2014/02/03","特開2014-022631","特許第5825683号","2015/10/23"
"徳光永輔,原田　裕一","ＭＯＳ構造の製造方法","特許","公開","国立大学法人東京工業大学, 日本電信電話株式会社","2012/02/10","特願2012-026957","2013/08/22","特開2013-165144",,
"徳光永輔,守谷　仁,日野　史郎,三浦　成久,大森　達夫","炭化珪素半導体装置の製造方法","特許","登録","国立大学法人東京工業大学, 三菱電機株式会社","2008/08/28","特願2008-219554","2010/03/11","特開2010-056285","特許第5344873号","2013/08/23"
"徳光永輔,日野　史郎,加藤　潤,三浦　成久","炭化珪素半導体装置の製造方法","特許","登録","国立大学法人東京工業大学, 三菱電機株式会社","2007/08/16","特願2007-212141","2009/03/05","特開2009-049099","特許第5072482号","2012/08/31"
"徳光永輔,日野　史郎,畑山　智裕,三浦　成久,大森　達夫","炭化珪素電界効果型トランジスタ及びその製造方法","特許","登録","国立大学法人東京工業大学, 三菱電機株式会社","2007/07/04","特願2007-176089","2009/01/22","特開2009-016530","特許第5519901号","2014/04/11"
"徳光永輔","固体電子装置およびその作製方法","特許","公開","国立大学法人東京工業大学","2006/03/17","特願2006-074642","2007/09/27","特開2007-250987",,
"徳光永輔,日野　史郎,三浦　成久,尾関　龍夫","半導体装置とゲート酸化膜の製造方法","特許","公開","国立大学法人東京工業大学, 三菱電機株式会社","2005/06/28","特願2005-188347","2007/01/18","特開2007-012684",,
"徳光永輔","固体電子装置","特許","公開","国立大学法人東京工業大学","2005/02/16","特願2005-039208","2006/05/11","特開2006-121029",,