発明者,発明の名称,種別,状態,出願人,出願日,出願番号,公開日,公開番号,登録日,登録番号
"松崎功佑,須崎（須?）友文,細野秀雄,前田祥宏,岡崎　哲士,李　奕樞","窒化銅半導体およびその製造方法","特許","登録","国立大学法人東京工業大学","2016/01/29","特願2016-015961","2017/08/03","特開2017-135329","特許第6712798号","2020/06/04"
"松崎功佑,須崎（須?）友文,細野秀雄","Ｐ型窒化銅半導体薄膜","特許","公開","国立大学法人東京工業大学","2014/06/24","特願2014-129607","2016/01/18","特開2016-008324",,
"須崎（須?）友文,細野秀雄","電子放出源","特許","登録","国立大学法人東京工業大学","2011/08/05","特願2011-172319","2013/02/21","特開2013-037855","特許第5742055号","2015/05/15"