Author,Title,Kind,Status,ApplicantName,ApplicationDate,ApplicationNumber,PublicationDate,PublicationNumber,RegistrationDate,RegistrationNumber
"HIDEO HOSONO,Masaaki Kitano,Hironobu Sugiyama,Toshiharu Yokoyama,Junghwan Kim","水素化触媒","Patent","Published","国立大学法人東京工業大学, AGC株式会社","2022/12/20","特願2022-203117","2023/08/08","特開2023-109700",,
"HIDEO HOSONO,Junghwan Kim","放射線検出素子、放射線検出デバイス及び放射線像撮像装置","Patent","Published","国立大学法人東京工業大学, 三菱ケミカル株式会社","2022/08/01","特願2022-122824","2024/02/14","特開2024-019991",,
"HIDEO HOSONO,Junghwan Kim,Hideya Kumomi","光電子素子、これを用いた平面ディスプレイ、及び光電子素子の製造方法","Patent","Registered","国立大学法人東京工業大学","2019/06/14","特願2020-528761","2021/09/24","再表2020/008839","特許第7181641号","2022/11/22"
"HIDEO HOSONO,Junghwan Kim,Joonho Bang,Hideya Kumomi","半導体化合物、半導体化合物の層を有する半導体素子、積層体、およびターゲット","Patent","Published","国立大学法人東京工業大学, AGC株式会社","2018/10/30","特願2019-557079","2020/12/17","再表2019/107046",,
"HIDEO HOSONO,Junghwan Kim","化合物半導体の量子ドットを含む膜","Patent","Registered","国立大学法人東京工業大学, AGC株式会社","2018/08/17","特願2018-153628","2019/03/14","特開2019-041104","特許第7073981号","2022/05/16"
"HIDEO HOSONO,Junghwan Kim","有機ＥＬ素子","Patent","Published","国立大学法人東京工業大学, AGC株式会社, 株式会社カネカ","2017/05/19","特願2017-100081","2018/12/06","特開2018-195512",,
"HIDEO HOSONO,TOSHIO KAMIYA,Hideya Kumomi,Junghwan Kim","酸化物半導体化合物の層、酸化物半導体化合物の層を備える半導体素子、および積層体","Patent","Registered","国立大学法人東京工業大学, AGC株式会社","2017/02/23","特願2018-503092","2019/01/10","再表2017/150351","特許第7130209号","2022/08/26"