Author,Title,Kind,Status,ApplicantName,ApplicationDate,ApplicationNumber,PublicationDate,PublicationNumber,RegistrationDate,RegistrationNumber
"Namhai Pham,Takanori Shirokura","スピン注入源、磁気メモリ、スピンホール発振器、計算機、及び磁気センサ","Patent","Published","国立大学法人東京工業大学, キオクシア株式会社","2021/08/31","特願2021-141316","2023/03/13","特開2023-034867",,
"Namhai Pham","ＳＯＴ（スピン軌道トルク）ＭＴＪ（磁気トンネル接合）デバイス、ＭＡＭＲ（マイクロ波アシスト磁気記録）書き込みヘッド、ＭＲＡＭ（磁気抵抗ランダムアクセスメモリ）デバイス","Patent","Published","国立大学法人東京工業大学, Western Digital Technologies, Inc.","2020/12/22","特願2020-212229","2021/09/02","特開2021-128814",,
"Namhai Pham,Takanori Shirokura","スピンホール発振器および磁気記録デバイス、計算機","Patent","Published","国立大学法人東京工業大学","2020/02/21","PCT/JP2020/007010","2020/09/10","WO 2020/179493",,
"Namhai Pham,Soichiro Nakano","磁気抵抗メモリ","Patent","Published","国立大学法人東京工業大学","2019/09/26","特願2019-176032","2021/04/08","特開2021-057357",,
"Namhai Pham,Takanori Shirokura","磁気記録デバイス","Patent","Published","国立大学法人東京工業大学","2019/08/21","特願2019-151364","2021/03/01","特開2021-034480",,
"Namhai Pham","磁性体とＢｉＳｂの積層構造の製造方法、磁気抵抗メモリ、純スピン注入源","Patent","Registered","国立大学法人東京工業大学","2018/09/14","特願2019-542310","2020/10/15","再表2019-054484","特許第7227614号","2023/02/14"
"Namhai Pham","強磁性半導体、その製造方法およびそれを用いた磁気センサ","Patent","Published","国立大学法人東京工業大学, 国立大学法人東京大学","2017/06/01","特願2017-109044","2018/12/27","特開2018-206884",,