発明者,発明の名称,種別,状態,出願人,出願日,出願番号,公開日,公開番号,登録日,登録番号
"片瀬貴義,神谷利夫,細野秀雄","アルカリ土類金属酸化物の半導体膜、半導体デバイス、及び半導体膜の作製方法","特許","公開","国立大学法人東京工業大学","2022/01/21","特願2022-008130","2023/08/02","特開2023-107040",,
"片瀬貴義,神谷利夫,細野秀雄","カルコゲナイド薄膜、及び熱電変換素子","特許","公開","国立大学法人東京工業大学","2021/08/31","特願2021-141736","2023/03/13","特開2023-035115",,
"片瀬貴義,山本隆文,神谷利夫,細野秀雄","水素置換酸化物バルク焼結体の製造方法、水素置換酸化物バルク焼結体、及び熱電変換素子","特許","公開","国立大学法人東京工業大学","2021/01/26","特願2021-010569","2022/08/05","特開2022-114315",,
"片瀬貴義,神谷利夫,西村優作,中村　伸宏　","熱伝導率可変材料、およびそのような材料を含む膜","特許","公開","国立大学法人東京工業大学, AGC株式会社","2020/06/25","特願2020-109946","2022/01/13","特開2022-007173",,