発明者,発明の名称,種別,状態,出願人,出願日,出願番号,公開日,公開番号,登録日,登録番号
"大見俊一郎","強誘電性薄膜の形成方法、それを備える半導体装置","特許","公開","国立大学法人東京工業大学","2022/02/18","PCT/JP2022/006613","2022/09/15","WO 2022/190817",,
"大見俊一郎,長岡　克己,相澤　俊","積層体、積層体を含む電子源及び電子デバイス、並びに積層体の製法及び浄化方法","特許","公開","国立大学法人東京工業大学, 国立研究開発法人 物質・材料研究機構","2021/09/22","特願2021-154427","2023/04/03","特開2023-045834",,
"大見俊一郎","半導体装置および浮遊ゲートデバイスの製造方法","特許","公開","国立大学法人東京工業大学","2021/05/14","特願2021-082485","2022/11/25","特開2022-175792",,
"大見俊一郎","半導体装置および浮遊ゲートデバイスの製造方法","特許","公開","国立大学法人東京工業大学","2021/02/25","特願2021-028111","2022/09/06","特開2022-129448",,
"大見俊一郎","半導体装置","特許","公開","国立大学法人東京工業大学","2020/09/23","特願2020-158828","2022/04/04","特開2022-052432",,
"大見俊一郎","トランジスタおよび不揮発性メモリ","特許","登録","国立大学法人東京工業大学","2019/06/28","特願2019-122028","2021/01/28","特開2021-009893","特許第7357901号","2023/09/29"
"大見俊一郎,政広　泰　","半導体デバイス電極用のシリサイド合金膜及びシリサイド合金膜の製造方法","特許","登録","国立大学法人東京工業大学, 田中貴金属工業株式会社","2016/06/24","特願2017-524988","2018/04/12","再表2016/208704","特許第6455847号","2018/12/28"
"大見俊一郎,政広　泰","半導体デバイス電極の製造方法","特許","登録","国立大学法人東京工業大学, 田中貴金属工業株式会社","2015/06/26","特願2015-128775","2017/01/19","特開2017-017050","特許第6086550号","2017/02/10"
"大見俊一郎,大見　忠弘","有機半導体素子及びそれを備えたCMIS半導体装置","特許","公開","国立大学法人東京工業大学, 国立大学法人東北大学","2012/12/12","特願2012-271769","2014/06/26","特開2014-116564",,
"大見俊一郎,加藤　樹里","半導体装置の製造方法","特許","公開","国立大学法人東京工業大学, セイコーエプソン株式会社","2007/11/08","特願2007-290698","2008/07/10","特開2008-160073",,
"大見俊一郎,加藤　樹理,金本　啓","半導体装置の製造方法","特許","登録","国立大学法人東京工業大学, セイコーエプソン株式会社","2006/05/31","特願2006-151441","2007/12/13","特開2007-324292","特許第4854074号","2011/11/04"
"酒井徹志,大見俊一郎,山崎　崇","半導体基板、半導体装置及び半導体基板の作成方法","特許","公開","国立大学法人東京工業大学","2004/10/04","特願2005-514563","2005/04/21","特再表2005-036638",,