発明者,発明の名称,種別,状態,出願人,出願日,出願番号,公開日,公開番号,登録日,登録番号
"細野秀雄,金正煥,雲見日出也","光電子素子、これを用いた平面ディスプレイ、及び光電子素子の製造方法","特許","登録","国立大学法人東京工業大学","2019/06/14","特願2020-528761","2021/09/24","再表2020/008839","特許第7181641号","2022/11/22"
"細野秀雄,金正煥,方俊皓,雲見日出也,渡邉　暁,大越　雄斗,宮川　直通,石橋　奈央,増茂　邦雄,中村　伸宏","半導体化合物、半導体化合物の層を有する半導体素子、積層体、およびターゲット","特許","公開","国立大学法人東京工業大学, AGC株式会社","2018/10/30","特願2019-557079","2020/12/17","再表2019/107046",,
"細野秀雄,雲見日出也,中村　伸宏　,渡邉　暁　,伊藤　和弘　,宮川　直通　","半導体素子","特許","公開","国立大学法人東京工業大学, AGC株式会社","2017/09/29","特願2018-543876","2019/07/18","特開(再)2018-066483",,
"松崎功佑,細野秀雄,大場史康,熊谷悠,原田航,雲見日出也","窒化銅半導体およびその製造方法","特許","登録","国立大学法人東京工業大学","2017/03/06","特願2017-041774","2018/09/20","特開2018-148031","特許第6951734号","2021/09/29"
"細野秀雄,神谷利夫,雲見日出也,金正煥,中村　伸宏,渡邉　暁,宮川　直通","酸化物半導体化合物の層、酸化物半導体化合物の層を備える半導体素子、および積層体","特許","登録","国立大学法人東京工業大学, AGC株式会社","2017/02/23","特願2018-503092","2019/01/10","再表2017/150351","特許第7130209号","2022/08/26"
"細野秀雄,雲見日出也,中村　伸宏　,渡邉　暁　,渡邉　俊成　,宮川　直通　","光電変換素子を製造する方法","特許","公開","国立大学法人東京工業大学, AGC株式会社","2016/11/21","特願2017-553783","2018/09/13","再表2017/094547",,
"松石聡,細野秀雄,雲見日出也","遍歴電子反強磁性体およびその製造法","特許","公開","国立大学法人東京工業大学","2015/02/16","特願2015-027978","2016/08/22","特開2016-150861",,