Oxidation rate and surface-potential variations of silicon during plasma oxidation | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Oxidation rate and surface-potential variations of silicon during plasma oxidation

Author

Japanese:	中村一隆.
English:	KAZUTAKA NAKAMURA.

Language

English

Journal/Book name

Japanese:
English:	Phys. Rev.

Volume, Number, Page

Vol. B53 pp. 3993

Published date

1996

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

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